Patents by Inventor Jung Ha SHIN

Jung Ha SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching composition, method for etching insulating film of semiconductor devices using the same and method for preparing semiconductor devices
    Patent number: 11186772
    Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: November 30, 2021
    Assignees: SK Innovation Co., Ltd., SK-Materials Co., Ltd.
    Inventors: Cheol Woo Kim, Kwang Kuk Lee, Jae Hoon Kwak, Young Bom Kim, Jung Ha Shin, Jong Ho Lee, Jin Kyung Jo
  • ETCHING COMPOSITION, METHOD FOR ETCHING INSULATING FILM OF SEMICONDUCTOR DEVICES USING THE SAME AND METHOD FOR PREPARING SEMICONDUCTOR DEVICES
    Publication number: 20210062089
    Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.
    Type: Application
    Filed: September 2, 2020
    Publication date: March 4, 2021
    Applicants: SK Innovation Co., Ltd., SK-Materials Co., Ltd.
    Inventors: Cheol Woo KIM, Kwang Kuk LEE, Jae Hoon KWAK, Young Bom KIM, Jung Ha SHIN, Jong Ho LEE, Jin Kyung JO
  • ETCHING COMPOSITION, METHOD FOR ETCHING INSULATING FILM OF SEMICONDUCTOR DEVICES USING THE SAME AND METHOD FOR PREPARING SEMICONDUCTOR DEVICES
    Publication number: 20210062088
    Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below: wherein R1 to R3 are independently hydrogen, or a substituted or unsubstituted hydrocarbyl group, and at least one of R1 to R3 is a substituted or unsubstituted hydrocarbyl group.
    Type: Application
    Filed: August 14, 2020
    Publication date: March 4, 2021
    Applicants: SK Innovation Co., Ltd., SK-Materials Co., Ltd.
    Inventors: Cheol Woo KIM, Kwang Kuk LEE, Jae Hoon KWAK, Young Bom KIM, Jung Ha SHIN, Jong Ho LEE, Jin Kyung JO