Abstract: Described herein is a semiconductor structure, comprising: a drain region; a drift region comprised of a wide band gap material disposed over the drain region; and a channel structure disposed over the drift region. In some embodiments, the channel structure comprises: an optically active material disposed over the drift region, wherein the optically active material generates charge carriers in response to an optical signal; and a source region disposed over the optically active material, wherein in an off state charge carriers in the optically active material are depleted to turn off the semiconductor structure, and in an on state charge carriers in the optically active material conduct a current in the semiconductor structure when an electric field is applied across the source region and drain region, causing the current to substantially flow directly between the source region and the drain region.

Abstract: Described herein is a semiconductor structure, comprising: a drain region; a drift region comprised of a wide band gap material disposed over the drain region; and a channel structure disposed over the drift region. In some embodiments, the channel structure comprises: an optically active material disposed over the drift region, wherein the optically active material generates charge carriers in response to an optical signal; and a source region disposed over the optically active material, wherein in an off state charge carriers in the optically active material are depleted to turn off the semiconductor structure, and in an on state charge carriers in the optically active material conduct a current in the semiconductor structure when an electric field is applied across the source region and drain region, causing the current to substantially flow directly between the source region and the drain region.