Patents by Inventor Jung-Ho Do

Jung-Ho Do has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200334407
    Abstract: A method of designing an integrated circuit includes receiving input data defining the integrated circuit, receiving information from a standard cell library including a plurality of standard cells, receiving information from a modified cell library including at least one modified cell having a same function as a corresponding standard cell among the plurality of standard cells and having a higher routability than the corresponding standard cell and generating output data by performing placement and routing in response to the input data, the information from the standard cell library and the information from the modified cell library.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 22, 2020
    Inventors: JIN-TAE KIM, JUNG-HO DO, TAE-JOONG SONG, DOO-HEE CHO, SEUNG-YOUNG LEE
  • Patent number: 10811357
    Abstract: An integrated circuit including: a power rail including first and second conductive lines spaced apart from each other in a vertical direction, wherein the first and second conductive lines extend in parallel to each other in a first horizontal direction, and are electrically connected to each other, to supply power to a first standard cell, wherein the first and second conductive lines are disposed at a boundary of the first standard cell; and a third conductive line between the first and second conductive lines and extending in a second horizontal direction orthogonal to the first horizontal direction, to transfer an input signal or an output signal of the first standard cell.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: October 20, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Boong Lee, Jung-Ho Do, Tae-Joong Song, Seung-Young Lee, Jong-Hoon Jung, Ji-Su Yu
  • Patent number: 10803226
    Abstract: An integrated circuit includes: a lower layer including first and second lower patterns extending in a first direction; a first via arranged on the first lower pattern, and a second via arranged on the second lower pattern; a first upper pattern arranged on the first via; and a second upper pattern arranged on the second via, a first color is assigned to the first upper pattern, a second color is assigned to the second upper pattern, the first and second upper patterns are adjacent to each other in a second direction, and the first via is arranged in a first edge region of the first lower pattern, the first edge region being farther away from the second lower pattern than a second edge region of the first lower pattern, the second edge region being opposite to the first edge region.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: October 13, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Ho Do, Jong-Hoon Jung, Seung-Young Lee, Tae-Joong Song
  • Patent number: 10790273
    Abstract: Provided are integrated circuits including a plurality of standard cells aligned along a plurality of rows. The integrated circuit includes first standard cells aligned on the first row and including first conductive patterns to which a first supply voltage is applied in a conductive layer and second standard cells aligned on the second row which is adjacent to the first row in the conductive layer and including second conductive patterns to which the first supply voltage is applied in the conductive layer. A pitch between the first conductive patterns and the second conductive patterns may be less than a pitch provided by single-patterning.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jung-ho Do
  • Patent number: 10790305
    Abstract: An integrated circuit includes a standard cell. The standard cell may include a plurality of gate lines and a plurality of first wirings. The plurality of first wirings may include a clubfoot structure conductive pattern that includes a first conductive pattern and a second conductive pattern spaced apart from each other. Each of the first conductive pattern and the second conductive pattern may include a first line pattern extending in a first direction and a second line pattern protruding from one end of the first line pattern in a direction perpendicular to the first direction. The plurality of gate lines may be spaced apart from each other by a first pitch in the first direction, and the plurality of second wirings may be spaced apart from each other by a second pitch in the first direction. The first pitch may be greater than the second pitch.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-ho Do, Ji-Su Yu, Hyeon-gyu You, Seung-Young Lee, Jae-Boong Lee, Jong-Hoon Jung
  • Publication number: 20200295134
    Abstract: A cell architecture for vertical field-effect transistors (VFETs) is provided. The cell architecture includes: top source/drain (S/D) contact structure having a square shape in a plan view; and horizontal metal patterns formed on the top S/D contact structures and extended in an X-direction to be connected to a vertical pattern through with an output signal of a logic circuit formed by the VFETs. The cell architecture further includes a gate contact structure formed on a gate connection pattern connecting gates of the VFETs, wherein a super via is formed on the gate contact structure to receive an input signal of the logic circuit.
    Type: Application
    Filed: December 12, 2019
    Publication date: September 17, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Ho DO, Rwik SENGUPTA
  • Publication number: 20200295146
    Abstract: Integrated circuit devices may include active regions spaced apart from each other in a direction. The active regions may include a first pair of active regions, a second pair of active regions, and a third pair of active regions. The first pair of active regions may be spaced apart from each other by a first distance in the direction, the second pair of active regions may be spaced apart from each other by the first distance in the direction, and the third pair of active regions may be spaced apart from each other by the first distance in the direction. The second pair of active regions may be spaced apart from the first pair of active regions and the third pair of active regions by a second distance in the direction, and the first distance may be shorter than the second distance.
    Type: Application
    Filed: July 24, 2019
    Publication date: September 17, 2020
    Inventors: JUNG HO DO, Seung Hyun Song
  • Patent number: 10726186
    Abstract: A method of designing an integrated circuit includes receiving input data defining the integrated circuit, receiving information from a standard cell library including a plurality of standard cells, receiving information from a modified cell library including at least one modified cell having a same function as a corresponding standard cell among the plurality of standard cells and having a higher routability than the corresponding standard cell and generating output data by performing placement and routing in response to the input data, the information from the standard cell library and the information from the modified cell library.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: July 28, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Tae Kim, Jung-Ho Do, Tae-Joong Song, Doo-Hee Cho, Seung-Young Lee
  • Patent number: 10707163
    Abstract: A semiconductor device includes a substrate; a plurality of conductive areas formed on the substrate at a first vertical level; a first wiring layer formed on the substrate at a second vertical level which is higher than the first vertical level, the first wiring layer including first lines that extend in a first direction, one first line of the first lines connected to a first conductive area selected from the plurality of conductive areas through a via contact; a second wiring layer formed on the substrate at a third vertical level which is higher than the second vertical level, the second wiring layer including second lines that extend in a second direction that crosses the first direction, one second line of the second lines connected to a second conductive area selected from the plurality of conductive areas; and a deep via contact spaced apart from lines of the first wiring layer in a horizontal direction and extending from the second conductive area to the one second line.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: July 7, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Vincent Chun Fai Lau, Jung-ho Do, Byung-sung Kim, Chul-hong Park
  • Publication number: 20200212069
    Abstract: A semiconductor device includes a substrate including a first active region and a second active region, the first active region having a conductivity type that is different than a conductivity type of the second active region, and the first active region being spaced apart from the second active region in a first direction, gate electrodes extending in the first direction, the gate electrodes intersecting the first active region and the second active region, a first shallow isolation pattern disposed in an upper portion of the first active region, the first shallow isolation pattern extending in the first direction, and a deep isolation pattern disposed in an upper portion of the second active region, the deep isolation pattern extending in the first direction, and the deep isolation pattern dividing the second active region into a first region and a second region.
    Type: Application
    Filed: March 12, 2020
    Publication date: July 2, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Taejoong SONG, Ha-Young KIM, Jung-Ho DO, Sanghoon BAEK, Jinyoung LIM, Kwangok JEONG
  • Publication number: 20200168542
    Abstract: Provided is an integrated circuit which includes: a plurality of conductive lines extending in a first horizontal direction on a plane separate from a gate line, and including first and second conductive lines; a source/drain contact having a bottom surface connected to a source/drain region, and including a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction; and a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction, in which the upper source/drain contact is placed below the first conductive line, and the gate contact is placed below the second conductive line. A top surface of the lower source/drain contact may be larger than a bottom surface of the upper source/drain contact.
    Type: Application
    Filed: January 28, 2020
    Publication date: May 28, 2020
    Inventors: Tae-hyung Kim, Jung-ho Do, Dae-young Moon, Sang-yeop Baeck, Jae-hyun Lim, Jae-seung Choi, Sang-shin Han
  • Publication number: 20200159984
    Abstract: Provided is an integrated circuit including a plurality of standard cells each including a front-end-of-line (FEOL) region and a back-end-of-line (BEOL) region on the FEOL region, the FEOL region including at least one gate line extending in a first horizontal direction. A BEOL region of a first standard cell among the plurality of standard cells includes an eaves section not overlapping an FEOL region of the first standard cell in a vertical direction, the eaves section protruding in a second horizontal direction perpendicular to the first horizontal direction.
    Type: Application
    Filed: January 23, 2020
    Publication date: May 21, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jung-ho DO, Jong-hoon JUNG, Ji-Su YU, Seung-young LEE, Tae-joong SONG, Jae-boong LEE
  • Publication number: 20200152627
    Abstract: A system on chip includes first to third nanowires extending in a second direction, first to third gate lines respectively surrounding the first to third nanowires, each of the first to third gate lines extending in a first direction across the second direction, a gate isolation region cutting the first to third gate lines and extending in the second direction, a first gate contact formed on the second gate line arranged between the first gate line and the third gate line, and electrically connecting the cut second gate line, a second gate contact formed on the first gate line, a third gate contact formed on the third gate line, a first metal line electrically connecting the second gate contact and the third gate contact; and a second metal line electrically connected to the first gate contact.
    Type: Application
    Filed: January 17, 2020
    Publication date: May 14, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Hoon BAEK, Sun-Young PARK, Sang-Kyu OH, Ha-young KIM, Jung-Ho DO, Moo-Gyu BAE, Seung-Young LEE
  • Publication number: 20200152640
    Abstract: A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.
    Type: Application
    Filed: December 23, 2019
    Publication date: May 14, 2020
    Inventors: JUNG-HO DO, SEUNGYOUNG LEE, JONGHOON JUNG, JINYOUNG LIM, GIYOUNG YANG, SANGHOON BAEK, TAEJOONG SONG
  • Publication number: 20200144418
    Abstract: Integrated circuit devices including standard cells are provided. The standard cells may include a P-type vertical field effect transistor (VFET) including a first channel region and a first top source/drain region sequentially stacked on a substrate in a vertical direction, an N-type VFET including a second channel region and a second top source/drain region sequentially stacked on the substrate in the vertical direction, and a top contact layer contacting both the first top source/drain region and the second top source/drain region.
    Type: Application
    Filed: August 14, 2019
    Publication date: May 7, 2020
    Inventor: Jung Ho Do
  • Publication number: 20200144260
    Abstract: Integrated circuit devices including standard cells are provided. The standard cells may include a first vertical field effect transistor (VFET) having a first conductivity type, and a second VFET having a second conductivity type. The first VFET may include a first top source/drain region, a first channel region, and a first bottom source/drain region. The second VFET may include a second top source/drain region, a second channel region, and a second bottom source/drain region. The standard cells may also include a conductive line that is electrically connected to the first top source/drain region or the first bottom source/drain region and is electrically connected to the second bottom source/drain region. The standard cell may be configured to output an output signal thereof through the conductive line.
    Type: Application
    Filed: June 7, 2019
    Publication date: May 7, 2020
    Inventor: JUNG HO DO
  • Publication number: 20200144417
    Abstract: Integrated circuit devices including standard cells are provided. The standard cells may a first vertical field effect transistor (VFET) having a first conductivity type, a second VFET having a second conductivity type, and a third VFET having the first conductivity type. The first VFET may include a first channel region protruding from a substrate, and the first channel region has a first length. The second VFET may include a second channel region protruding from the substrate, and the second channel region has a second length. The third VFET may include a third channel region protruding from the substrate. The first channel region, the second channel region, and third channel region may be spaced apart from each other and may be sequentially arranged along a direction, and the second length may be greater than 1.5 times the first length.
    Type: Application
    Filed: June 7, 2019
    Publication date: May 7, 2020
    Inventor: JUNG HO DO
  • Publication number: 20200135711
    Abstract: A semiconductor device includes a substrate having a plurality of active patterns. A plurality of gate electrodes intersects the plurality of active patterns. An active contact is electrically connected to the active patterns. A plurality of vias includes a first regular via and a first dummy via. A plurality of interconnection lines is disposed on the vias. The plurality of interconnection lines includes a first interconnection line disposed on both the first regular via and the first dummy via. The first interconnection line is electrically connected to the active contact through the first regular via. Each of the vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion. Each of the interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.
    Type: Application
    Filed: December 26, 2019
    Publication date: April 30, 2020
    Inventors: JUNG-HO DO, WOOJIN RIM, JISU YU, JONGHOON JUNG
  • Publication number: 20200135721
    Abstract: An integrated circuit having a vertical transistor includes first through fourth gate lines extending in a first direction and sequentially arranged in parallel with each other, a first top active region over the first through third gate lines and insulated from the second gate line, and a second top active region. The first top active region forms first and third transistors with the first and third gate lines respectively. The second top active region is over the second through fourth gate lines and insulated from the third gate line. The second top active region forms second and fourth transistors with the second and fourth gate lines respectively.
    Type: Application
    Filed: January 2, 2020
    Publication date: April 30, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jung-ho DO, Sang-hoon BAEK, Tae-joong SONG, Jong-hoon JUNG, Seung-young LEE
  • Patent number: 10580733
    Abstract: Provided is an integrated circuit which includes: a plurality of conductive lines extending in a first horizontal direction on a plane separate from a gate line, and including first and second conductive lines; a source/drain contact having a bottom surface connected to a source/drain region, and including a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction; and a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction, in which the upper source/drain contact is placed below the first conductive line, and the gate contact is placed below the second conductive line. A top surface of the lower source/drain contact may be larger than a bottom surface of the upper source/drain contact.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: March 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-hyung Kim, Jung-ho Do, Dae-young Moon, Sang-yeop Baeck, Jae-hyun Lim, Jae-seung Choi, Sang-shin Han