Abstract: The present invention relates to a composition for a gel polymer electrolyte, which includes a lithium salt, a non-aqueous organic solvent, a polymerization initiator, and an oligomer containing a polycarbonate-based repeating unit, a gel polymer electrolyte in which mechanical strength and ion transfer capability are improved by polymerization of the composition for a gel polymer electrolyte, and a lithium secondary battery in which external impact and stability during high-temperature storage are improved by including the gel polymer electrolyte.

Abstract: In a method of predicting a position of an object at a future time point for a vehicle, video image information at a current time point and at a plurality of time points before the current time point acquired through a camera of the vehicle may be extracted as semantic segmentation image. A mask image imaging an attribute and position information of an object present in each of the video images may be extracted. A position distribution of the object may be predicted by deriving a plurality of hypotheses for a position of the object at a future time point through deep learning by receiving video images at the current time point and the time points before the current time point, a plurality of semantic segmentation images, a plurality of mask images, and ego-motion information of the vehicle, and calculating the plurality of hypotheses as a Gaussian mixture probability distribution.

Abstract: There is provided a video processing method performed by a computing device, the method including the steps of: collecting video from an external device; generating preprocessed data by extracting two-dimensional or three-dimensional skeleton information from the video; pre-training a first artificial intelligence model including N transformer blocks from the preprocessed data by applying an attention from a body of an object to a plurality of joints, an attention from each of the plurality of joints to the body, and an attention between persons; and learning, when parameters determined as a result of the pre-training of the first artificial intelligence model are transferred, a method of recognizing an action from the video received from the external device, using a second artificial intelligence model including the N transformer blocks on the basis of the parameters, wherein N is a natural number equal to or larger than 2.

Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: A motor includes a rotor and a stator, in which the rotor includes: a rotor core including a plurality of core portions disposed on a rotation shaft along an axial direction of the rotor, wherein the rotor core includes a core flow path through which a cooling fluid passes through each core portion; and a cooling plate which is inserted between the two divided core portions so that both surfaces are joined to the two neighboring core portions, and a distribution flow path that distributes the cooling fluid supplied from a cooling flow path of the rotation shaft into the core flow path of the two neighboring core portions is provided between at least one of the two neighboring core portions and the cooling plate.

Abstract: The present disclosure provides a method for transfer and assembly of RGB micro-light-emitting diodes using vacuum suction force whereby the vacuum state of micrometer-sized adsorption holes to which micro-light-emitting diodes formed on a mother substrate or a temporary substrate are bonded is controlled selectively, so that only the micro-light-emitting diode devices desired to be detached from the mother substrate or the temporary substrate are detached from the mother substrate or the temporary substrate using vacuum suction force and then transferred to a target substrate.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: The present disclosure provides a method for transfer and assembly of RGB micro-light-emitting diodes using vacuum suction force whereby the vacuum state of micrometer-sized adsorption holes to which micro-light-emitting diodes formed on a mother substrate or a temporary substrate are bonded is controlled selectively, so that only the micro-light-emitting diode devices desired to be detached from the mother substrate or the temporary substrate are detached from the mother substrate or the temporary substrate using vacuum suction force and then transferred to a target substrate

Abstract: The present disclosure provides a method for transferring a semiconductor device using a micro-vacuum module, wherein the micro-vacuum module includes: a vacuum-forming substrate having a plurality of through-holes, which are connected to an external pump module and a vacuum control unit, formed; and a pattern-forming unit equipped with a single channel or a plurality of independent channels, which is coupled to the vacuum-forming substrate, wherein the plurality of channels are formed to be communicated respectively to a plurality of vacuum holes which have a smaller size than the size of a semiconductor device to be transferred, and the plurality of vacuum holes, having a diameter smaller than 100 ?m, are contacted to a micro semiconductor device having a width and a length of 100 ?m or smaller and the micro semiconductor device is transferred using vacuum adsorption.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: Disclosed herein is a display apparatus including a liquid crystal panel configured to display an image; a backlight unit including: a light source; and an optical member disposed at a path of light emitted from the light source toward the liquid crystal panel; a chassis disposed on the backlight unit and having a plurality of insertion holes along edges thereof; and a frame configured to support the liquid crystal panel and the optical member, the liquid crystal panel and the optical member provided between the frame and the chassis, wherein the frame is coupled to the plurality of insertion holes of the chassis by fitting.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A laminating structure of an electronic device using a transferring element according to the present disclosure includes a target substrate, a bottom electrode formed on the target substrate, an electronic device which is bonded to the bottom electrode, a top contact formed on the electronic device, a transferring element which is placed between the bottom electrode and the electronic device on the target substrate, and a top electrode connected to the electronic device, wherein the transferring element attached to the carrier substrate comes into contact with the electronic device, and is then transferred onto the target substrate.

Abstract: A laminating structure of an electronic device using a transferring element according to the present disclosure includes a target substrate, a bottom electrode formed on the target substrate, an electronic device which is bonded to the bottom electrode, a top contact formed on the electronic device, a transferring element which is placed between the bottom electrode and the electronic device on the target substrate, and a top electrode connected to the electronic device, wherein the transferring element attached to the carrier substrate comes into contact with the electronic device, and is then transferred onto the target substrate.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A material for high carburizing steel and a method for producing a gear using the material are provided. The material includes C of about 0.13 to 0.3 wt %, Si 0.7 to 1.3 wt %, Mn of about 0.3 to 1 wt %, P of about 0.02 wt % or less, S of about 0.03 wt % or less, Cr of about 2.2 to 3.0 wt %, Mo of about 0.2 to 0.7 wt %, Cu of about 0.3 wt % or less, Nb of about 0.03 to 0.06 wt %, V of about 0.1 to 0.3 wt %, Ti of about 0.001 to 0.003 wt %, a balance of Fe and other inevitable.

Abstract: Disclosed herein is a display apparatus including a liquid crystal panel configured to display an image; a backlight unit including: a light source; and an optical member disposed at a path of light emitted from the light source toward the liquid crystal panel; a chassis disposed on the backlight unit and having a plurality of insertion holes along edges thereof; and a frame configured to support the liquid crystal panel and the optical member, the liquid crystal panel and the optical member provided between the frame and the chassis, wherein the frame is coupled to the plurality of insertion holes of the chassis by fitting.