Abstract: According to one embodiment, a method by which a device provides a service so as to enable cognitive function rehabilitation by using a virtual object model comprises the steps of: generating a virtual object model in a virtual space matched to correspond to a real space where a subject is located; generating a plurality of first preliminary stimuli for identifying egocentric neglect in the visual range of the subject on the basis of the virtual object model; obtaining and collecting first reaction information about whether the subject has recognized the first preliminary stimuli; determining an egocentric cognition range in which the subject can egocentrically recognize visual stimuli on the basis of the first reaction information; sequentially generating a plurality of second preliminary stimuli for identifying allocentric neglect in the egocentric cognition range on the basis of the virtual object model; obtaining and collecting second reaction information about whether the subject has recognized the secon

Abstract: A power control device configured for diagnosing an open-circuit fault occurring in a power system of an autonomous vehicle and an open-circuit diagnosis method thereof, may include a power control switch that selectively connects or separates main power output from the first power supply and auxiliary power output from the second power supply, and a processor that determines a possibility of an open-circuit fault of a vehicle power source based on a current flowing through the power control switch and determines whether it is possible to drive an electric load with an output power of the second power supply alone and determine an open-circuit position based on an output of the first power supply when there is the possibility of the open-circuit fault.

Abstract: In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first electrode. A spacer partially covering the first electrode is formed. A phase-change material layer is formed on the first electrode and the second spacer. A second electrode is formed on the phase-change material layer. Reset/set currents of the phase-change memory unit may be reduced and deterioration of the phase-change material layer may be reduced and/or prevented.