Abstract: This application relates to an energy storage device. In one embodiment, the energy storage device includes an electrode unit including first and second current collectors that are separated by a separator, first and second terminals respectively connected to the first and second current collectors and a case accommodating the electrode unit. The energy storage device also includes a flexible closure covering the case and having first and second through-holes passing therethrough and exposing the first and second terminals to the environment, wherein the flexible closure contains about 15 wt % or less of SiO2. According to some embodiments, since the weight percentage of SiO2 is significantly reduced and thus, the amount and degree of the SiO2 reduction significantly decreases, a structural deformation of the flexible closure at a microscopic level is minimized. Accordingly, a wetting phenomenon is significantly reduced, and thus the life span of an energy storage device significantly increases.

Abstract: This application relates to an energy storage device. In one embodiment, the energy storage device includes an electrode unit including first and second current collectors that are separated by a separator, first and second terminals respectively connected to the first and second current collectors and a case accommodating the electrode unit. The energy storage device also includes a flexible closure covering the case and having first and second through-holes passing therethrough and exposing the first and second terminals to the environment, wherein the flexible closure contains about 15 wt % or less of SiO2. According to some embodiments, since the weight percentage of SiO2 is significantly reduced and thus, the amount and degree of the SiO2 reduction significantly decreases, a structural deformation of the flexible closure at a microscopic level is minimized. Accordingly, a wetting phenomenon is significantly reduced, and thus the life span of an energy storage device significantly increases.

Abstract: Disclosed is a capacitor that is not easily degraded to stably maintain the performance for a long time. The electrochemical capacitor includes a first electrode provided in a rolled sheet form and having active material layers coated on both surfaces thereof; a second electrode provided in a rolled sheet form at an outer side of the first electrode to face the first electrode and having active material layers coated on both surfaces thereof; and a separator interposed and rolled between the first electrode and the second electrode, wherein at least a portion of an outermost layer of the first electrode is exposed to the outside.

Abstract: In a semiconductor device including a transistor having an embedded gate, and methods of manufacturing the same, a substrate is divided into first and second regions. A gate trench is formed in the first region, a first gate structure partially fills the gate trench and a passivation layer pattern is provided inside the gate trench and positioned on the first gate structure. A first source/drain is provided adjacent to sidewalls of the first gate structure. A second gate structure is provided in the second region and has a silicon oxide layer, a conductive layer pattern and a metal silicide layer pattern stacked on the conductive layer pattern. A second source/drain is provided adjacent to sidewalls of the second gate structure. Defects due to formation of reactants may be reduced in a formation process of the above-described semiconductor device, improving reliability and operating characteristics.

Abstract: An isolation structure may include a trench formed on a surface of a substrate. A first isolation pattern may be provided on an inner face of the trench to define an auxiliary trench. A second isolation pattern may be provided on the first isolation pattern to partially fill the auxiliary trench. A third isolation pattern may be provided on the second isolation pattern to fill up the auxiliary trench. The second isolation pattern may have an etching selectivity with respect to the first isolation pattern.