Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: There is provided a semiconductor device capable of improving performance and reliability of an element. The semiconductor device includes an active pattern extending in a first direction, and a plurality of gate structures spaced apart from each other in the first direction on the active pattern. Each gate structure comprises a gate electrode extending in a second direction and a gate spacer on a sidewall of the gate electrode and a source/drain pattern disposed between adjacent gate structures. The gate structure comprises a semiconductor liner layer and a semiconductor filling layer on the semiconductor liner layer, wherein the semiconductor liner layer and the semiconductor filling layer are formed of silicon-germanium. The semiconductor filling layer comprises an upper portion protruding in a third direction beyond an upper surface of the active pattern.

Abstract: An operating room allocation apparatus may be provided. The apparatus according to an embodiment of the present disclosure may include: an information obtaining unit configured to obtain information about patient's entry and exit times in each operating room; a first calculation unit configured to calculate a utilization rate of the operating room for each certain time period based on the patient's entry and exit times; and a second calculation unit configured to receive certain time information from a user and calculate an average utilization rate by time period in the received time information.

Abstract: An embodiment vehicle driving control apparatus includes a processor configured to determine an output torque of a driving source by using a driver driving propensity for each driver of a plurality of drivers or a driving situation based on a learning algorithm and a memory configured to store algorithms and data to be driven by the processor.

Abstract: An embodiment server includes a processor configured to collect driving data based on a driver driving propensity or a driving situation from a plurality of vehicles and to change information for determining an output torque suitable for each of the vehicles by analyzing the driving data and a communication device configured to transmit the changed information for determining the output torque to the vehicles by communicating with the vehicles.

Abstract: An apparatus and a method for predicting a speed of a vehicle. The apparatus includes storage that stores past driving information of the vehicle. The apparatus also includes a controller that extracts feature information about a current state of the vehicle from the past driving information of the vehicle. The controller also generates a query corresponding to each target time point based on the feature information. The controller also determines forward information corresponding to each target time point by using each query. The controller also predicts the speed of the vehicle at each target time point based on the query corresponding to each target time point and the forward information corresponding to each target time point.

Abstract: A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.

Abstract: A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: Disclosed are an apparatus for distributing power of an electric vehicle and a method thereof capable of optimally improving the energy consumption efficiency of the electric vehicle by predicting a vehicle speed for a predetermined time using a learned vehicle speed prediction model, determining wheel power based on the vehicle speed, and distributing the wheel power to a front wheel drive motor and a rear wheel drive motor. The apparatus includes a storage that stores a vehicle speed prediction model in which learning is completed, and a controller that predicts a vehicle speed for a preset time using the vehicle speed prediction model, determines wheel power based on the vehicle speed, and distributes the wheel power to a front wheel drive motor and a rear wheel drive motor.

Abstract: The present disclosure relates to a method for manufacturing a ceramic heater. The method for manufacturing a ceramic heater according to the present disclosure comprises: separately charging a ceramic powder into a center portion and multiple split edge portions in a formation mold and leveling the charged ceramic powder; manufacturing a molded body or pre-sintered body of the ceramic powder from the leveled ceramic powder; disposing a high-frequency electrode or a heating element on the molded body or pre-sintered body of the ceramic powder and filling a second ceramic powder; and integrally sintering the molded body or pre-sintered body of the ceramic powder and the second ceramic powder.