Abstract: A display device having touch sensors and a method of driving the same are disclosed. The display device includes a display panel including a pixel array including pixels and a touch sensor array including touch sensors formed in the pixel array, the pixel array being divided into blocks, a gate driver to sequentially drive a plurality of gate lines in the pixel array in a block unit, a data driver to drive a plurality of data lines in the pixel array when the gate lines are driven, a touch controller to sequentially drive the touch sensor arrays in the block unit, and a timing controller to divide one frame into at least one display mode at which the pixel array is driven and at least one touch sensing mode at which the touch sensor array is driven and to control the gate drive, the data driver and the touch controller so that the display mode and the touch sensing mode alternate.

Abstract: A liquid crystal display (LCD) device includes a data converter for processing first and second data signals, a backlight unit emitting light having a luminance, and a liquid crystal panel supplied with the light. The LCD panel has a first and second region corresponding to the first and second data signals. The data converter differently processes gray levels of the first and second data signals a and the luminance is adjusted when the first and second regions have different brightness. The LCD driving method allows presentation of different image regions on a screen, such as moving image screens and static image screens without brightness degradation.

Abstract: A viewing angle controllable liquid crystal display device, as embodied, includes: a liquid crystal panel including a plurality of color pixels, each of the color pixels having color subpixels and at least one interference subpixel; an input unit for inputting color subpixel data to be supplied to the color subpixels and inputting area data of an image whose security is requested; an interference data generating unit for generating interference subpixel data to be supplied to the interference subpixels; an interference area control unit for controlling the interference data generating unit to output the interference subpixel data corresponding to the area data; a data combining unit for combining the interference subpixel data with the color subpixel data; and a driving circuit for driving the color subpixels and the interference subpixels on the liquid crystal panel using the combined data from the data combining unit.

Abstract: The present invention relates to device and method for adjusting white balance in a laser display system, which enables to adjust white balance taking an optical characteristic of a laser beam into account.

Abstract: An apparatus for driving a light scanner and method thereof are disclosed. The present invention includes an apparatus for driving a light scanner, which scans an image on a screen, the apparatus comprising the light scanner driven by a drive signal, a sensing unit sensing a driving of the light scanner, a pixel clock signal generating unit generating a pixel clock signal by detecting a 90-degree phase difference between the drive signal and a sensing signal sensed by the sensing unit, a sync signal adjusting unit adjusting vertical and horizontal sync signals of an input video according to the pixel clock signal and a driving unit driving the light scanner according to the adjusted horizontal and vertical sync signals.

Abstract: A cycloolefin-based copolymer and a hydrogenation process are disclosed, wherein the cycloolefin-based copolymer is prepared by using: a monomer which can be easily and economically obtained by hydrogenating dicyclopentadiene that occupies much of C5 fractions from naphtha cracking; or a monomer which can be obtained by chemically bonding three molecules of cyclopentadiene via Diels-Alder reactions and then hydrogenating the cyclopentadiene. The copolymer can be used in various fields as an amorphous transparent resin.

Abstract: A laser projection display and a method of compensating for image distortion of the same stereoscopic liquid crystal display device having a touch panel and a method for manufacturing the same are disclosed. Herein, the method includes displaying a picture including a red image, a green image, and a blue image, selecting one of the red image, the green image, and the blue image so as to perform pixel alignment of the picture, calculating pixel coordinate values x+dx and y+dy corresponding to the selected image (herein, x represents the x coordinate value prior to alignment, y represents the y coordinate value prior to alignment, dx represents a varied x coordinate value after alignment, and dy represents a varied y coordinate value after alignment), calculating distortion compensation coordinate values X? and Y? corresponding to the pixel coordinate values x+dx and y+dy, and mapping the distortion compensation values X? and Y?, thereby compensating for an image distortion occurring in the selected image.

Abstract: The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.

Abstract: Driving a light scanner at a resonant frequency of the light scanner using a phase delay compensated driving signal.

Abstract: An optical lens, a light emitting device package using the optical lens and a backlight unit are disclosed, whereby light irradiated upward of a light emitting device is refracted from a bottom refraction surface to allow reaching a reflection surface, and an optical lens is mounted for reflecting the light sideways of the lens from the reflection surface to minimize an amount of light irradiated upward of the lens while increasing the amount of light irradiated toward the lateral surface of the lens, thereby limiting the generation of a hot spot to the maximum. The present invention dispenses with a hot spot baffle plate and a complicated assembly process to enable to reduce the number of parts and to decrease the thickness of a panel.

Abstract: The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with crack-inhibiting walls to remove voids, thereby minimizing cracks or damage that may occur in the nitride semiconductor unit devices during a laser lift-off process. In addition, there is an advantage in that the devices are bonded through a bonding-reinforcing plate or the crack-inhibiting walls to a carrier substrate with a bonding member coated thereon, thereby maintaining a strong bonding force to the carrier substrate.

Abstract: A viewing angle controllable liquid crystal display device, as embodied, includes: a liquid crystal panel including a plurality of color pixels, each of the color pixels having color subpixels and at least one interference subpixel; an input unit for inputting color subpixel data to be supplied to the color subpixels and inputting area data of an image whose security is requested; an interference data generating unit for generating interference subpixel data to be supplied to the interference subpixels; an interference area control unit for controlling the interference data generating unit to output the interference subpixel data corresponding to the area data; a data combining unit for combining the interference subpixel data with the color subpixel data; and a driving circuit for driving the color subpixels and the interference subpixels on the liquid crystal panel using the combined data from the data combining unit.

Abstract: A liquid crystal display (LCD) device includes a data converter for processing first and second data signals, a backlight unit emitting light having a luminance, and a liquid crystal panel supplied with the light. The LCD panel has a first and second region corresponding to the first and second data signals. The data converter differently processes gray levels of the first and second data signals a and the luminance is adjusted when the first and second regions have different brightness. The LCD driving method allows presentation of different image regions on a screen, such as moving image screens and static image screens without brightness degradation.

Abstract: The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.

Abstract: The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.

Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.

Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.

Abstract: The present invention relates to a method for manufacturing light-emitting device with compound semiconductor and more particularly, a method for manufacturing light-emitting device with Group III-V compound semiconductor for increasing light-emitting efficiency or long durability of elements, by conducting of a heat-treatment at lower temperature than done at the conventional art, i.e. activating p-semiconductor layer under the condition of high oxygen density, which idea is derived from the well known fact that on the higher oxygen density, the better semiconductor layer doped with p-type such like p-GaN can be activated.

Abstract: A method for fabricating a high voltage transistor includes the steps of: forming a plurality of drift regions on a semiconductor substrate of a first conductive type; implanting drift ions of a second conductive type into surfaces of the drift regions of the semiconductor substrate at a first depth; implanting drift ions of the second conductive type into the surfaces of the drift regions of the semiconductor substrate at a second depth deeper than the first depth; implanting first conductive channel stop ions into the semiconductor substrate thereby forming a space between the semiconductor substrate and the drift regions; forming a device isolation film on a surface of the semiconductor substrate into which the channel stop ions are implanted; forming a gate electrode by inserting a gate insulating film on the semiconductor substrate between the drift regions; and forming a source/drain impurity diffusion region of a second conductive type in the surface of the semiconductor substrate at both sides of the

Abstract: A method for fabricating a high voltage transistor includes the steps of: forming a plurality of drift regions on a semiconductor substrate of a first conductive type; implanting drift ions of a second conductive type into surfaces of the drift regions of the semiconductor substrate at a first depth; implanting drift ions of the second conductive type into the surfaces of the drift regions of the semiconductor substrate at a second depth deeper than the first depth; implanting first conductive channel stop ions into the semiconductor substrate thereby forming a space between the semiconductor substrate and the drift regions; forming a device isolation film on a surface of the semiconductor substrate into which the channel stop ions are implanted; forming a gate electrode by inserting a gate insulating film on the semiconductor substrate between the drift regions; and forming a source/drain impurity diffusion region of a second conductive type in the surface of the semiconductor substrate at both sides of the