Abstract: Methods and systems for displaying a healthcare condition. The methods include receiving at an interface a plurality of inputs of healthcare data associated with a patient, mapping the plurality of inputs of healthcare data to a phenotype using a first ontology system, determining at least one body portion associated with the phenotype using a second ontology system representative of body portions, and generating a first interactive display of the at least one body portion associated with the phenotype.

Abstract: A leveling device and an apparatus that utilizes the leveling device are described. The leveling device includes a main body, a rod rotatably coupled with the main body, an elevator block rotatably coupled with the rod and slidably coupled with a base block of the main body, and an elevator pin slidably coupled with the base block of the main body and slidably coupled with a sloped surface of the elevator block. A rotation of the rod causes a linear movement of the elevator block, which, in turn, causes a movement of the elevator pin in a direction that is perpendicular to the movement of the elevator block.

Abstract: A leveling device and an apparatus that utilizes the leveling device are described. The leveling device includes a main body, a rod rotatably coupled with the main body, an elevator block rotatably coupled with the rod and slidably coupled with a base block of the main body, and an elevator pin slidably coupled with the base block of the main body and slidably coupled with a sloped surface of the elevator block. A rotation of the rod causes a linear movement of the elevator block, which, in turn, causes a movement of the elevator pin in a direction that is perpendicular to the movement of the elevator block.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: Disclosed herein is a method for forming a silicon epitaxial layer. The method comprises the steps of cleaning the surface of a silicon substrate having dopant of predetermined concentration doped therein with mixed plasma comprising an etching gas containing fluorine and hydrogen or deuterium, and forming a silicon epitaxial layer on the cleaned surface of the silicon substrate. The doped concentration of the silicon substrate is preferably 1018 to 1021 atoms/cm3. According to the present invention, a new preliminary cleaning step is adopted, whereby a silicon epitaxial layer of good quality is formed on a highly doped silicon substrate at a low temperature of 700° C. or less.