Abstract: A positive electrode material and a method of producing thereof is provided. The positive electrode material having a bimodal particle diameter distribution and including large-diameter particles and small-diameter particles, wherein the small-diameter particle is a lithium composite transition metal oxide in the form of a single particle and containing a rock salt phase formed on a surface portion thereof.

Abstract: An apparatus for producing trifluoramine oxide includes: a reactor in which a photochemical reaction for generating trifluoramine oxide by using vapor-phase FNO and F2 as starting materials is performed; an ultraviolet irradiation means for irradiating ultraviolet rays having a peak wavelength in a wavelength band of 300 nm to 400 nm into the reactor; and a separation and collection means which is in vapor communication with the reactor, separating and collecting generated trifluoramine oxide from reaction products generated in the reactor. The ultraviolet rays are such that an intensity of rays having a wavelength band of less than 300 nm is less than 5% of an intensity of rays having a wavelength band of 300 nm to 400 nm.

Abstract: A positive electrode active material includes a nickel-based lithium transition metal oxide containing nickel in an amount of 60 mol % or more based on a total number of moles of metals excluding lithium, wherein cobalt is included in an amount of greater than 0 ppm to 6,000 ppm or less on a surface of the nickel-based lithium transition metal oxide. A method of preparing the positive electrode active material, a positive electrode for a lithium secondary battery and a lithium secondary battery which includes the positive electrode active material are also provided.

Abstract: An embodiment suspension system for a vehicle includes a rocker arm housing coupled to a first end of a lower arm through which a rotation axis passes, a rocker arm having a first end surrounded by the rocker arm housing and a second end disposed toward a center of the rocker arm housing, the rocker arm being rotatable together with the lower arm about the rotation axis, a torsion bar having a first end connected to the second end of the rocker arm and a second end extending along the rotation axis and then coupled to a vehicle body connection member, and a contact protrusion disposed on either the rocker arm housing or the rocker arm, the contact protrusion being configured to come into contact with the other of the rocker arm and the rocker arm housing in accordance with a rotation angle of the rocker arm housing.

Abstract: An embodiment suspension system for a vehicle includes a rocker arm housing coupled to a first end of a lower arm through which a rotation axis passes, a rocker arm having a first end surrounded by the rocker arm housing and a second end disposed toward a center of the rocker arm housing, the rocker arm being rotatable together with the lower arm about the rotation axis, a torsion bar having a first end connected to the second end of the rocker arm and a second end extending along the rotation axis and then coupled to a vehicle body connection member, and a contact protrusion disposed on either the rocker arm housing or the rocker arm, the contact protrusion being configured to come into contact with the other of the rocker arm and the rocker arm housing in accordance with a rotation angle of the rocker arm housing.

Abstract: Provided are an apparatus for depositing a thin film using plasma which can prevent impurities from being formed by inhibiting plasma from being diffused into a nozzle pipe and sustained in the nozzle pipe and improve thickness uniformity of the deposited thin film and a method of depositing the same. The apparatus for depositing a thin film includes a chamber having a substrate holder and an inner space defined by an inner wall; and a nozzle pipe comprising a first end fixed to the inner wall of the chamber; a second end extending into the inner space of the chamber; a flow path penetrating the nozzle pipe from the first end to the second end; and at least one slit which is disposed at the second end and opens the flow path into the inner space of the chamber.

Abstract: A method of fabricating a flash memory cell having a split gate structure. A sacrificial layer is formed on a floating gate layer formed on a semiconductor substrate. The sacrificial layer is etched to form an opening exposing a portion of the floating gate layer. A gate interlayer insulating layer pattern is formed inside the opening. After removing the sacrificial layer pattern and etching the floating gate layer (using the gate interlayer insulating layer pattern as an etch mask), a floating gate is formed under the gate interlayer insulating layer pattern. A control gate is formed overlapping a portion of the floating gate.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A method of fabricating a flash memory cell having a split gate structure. A sacrificial layer is formed on a floating gate layer formed on a semiconductor substrate. The sacrificial layer is etched to form an opening exposing a portion of the floating gate layer. A gate interlayer insulating layer pattern is formed inside the opening. After removing the sacrificial layer pattern and etching the floating gate layer (using the gate interlayer insulating layer pattern as an etch mask), a floating gate is formed under the gate interlayer insulating layer pattern. A control gate is formed overlapping a portion of the floating gate.

Abstract: Chemical vapor deposition (CVD) processing equipment for use in fabricating a semiconductor device requiring deposition of an insulation layer or a metal layer includes a chamber having an exhaust line in a lower central portion thereof, a heater block for supporting a wafer to be supplied in an interior of the chamber, the heater block having a heating plate in an interior thereof, a support shaft for supporting the heater block, and an electrical wire for providing an electrical connection to the heating plate. The support shaft extends through a bottom of the chamber. The electrical wire extends through the bottom of the chamber within the support shaft.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.