Patents by Inventor Jung Hun Jang
Jung Hun Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11980034Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a peripheral circuit disposed on a substrate; and a gate stack structure overlapping with the peripheral circuit. The gate stack structure includes a plurality of first cell plugs having substantially a cylindrical structure and a plurality of second cell plugs having substantially a hexagonal prism structure.Type: GrantFiled: May 14, 2021Date of Patent: May 7, 2024Assignee: SK hynix Inc.Inventors: Dong Hun Lee, Jung Shik Jang
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Publication number: 20240109858Abstract: The present invention relates to a compound capable of lowering the flammability of a non-aqueous electrolyte when included in the non-aqueous electrolyte and improving the life properties of a battery by forming an electrode-electrolyte interface which is stable at high temperatures and low in resistance, and relates to a compound represented by Formula I descried herein, a non-aqueous electrolyte solution and a lithium secondary battery both including the compound, n, m, Ak, and X are described herein.Type: ApplicationFiled: March 23, 2022Publication date: April 4, 2024Applicants: LG Chem, Ltd., LG Energy Solution, Ltd.Inventors: Jung Keun Kim, Su Jeong Kim, Mi Sook Lee, Won Kyun Lee, Duk Hun Jang, Jeong Ae Yoon, Kyoung Hoon Kim, Chul Haeng Lee, Mi Yeon Oh, Kil Sun Lee, Jung Min Lee, Esder Kang, Chan Woo Noh, Chul Eun Yeom
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Patent number: 11911733Abstract: A hair dye dispenser according to an embodiment of the present invention includes a housing having an opening hole formed on one side of which a hair dye is provided, a plurality of cartridges disposed inside the housing and accommodating at least one dyeing material, a main body in which the plurality of cartridges are rotatably disposed, a main motor for rotating the main body so that a first cartridge of the plurality of cartridges is located adjacent to the opening hole, a discharge module for discharging the dyeing material contained in the first cartridge, and an accommodating body in which a basket accommodating the dyeing material discharged by the discharge module is placed, wherein the discharge module may include an elevating body that pressurizes the first cartridge when moving up and is separated from the first cartridge when moving down.Type: GrantFiled: October 24, 2019Date of Patent: February 27, 2024Assignee: LG FAROUK CO.Inventors: Kyung Sik Jang, Jeong Ho Lee, Jung Yong Lee, Seong Lok Hwang, Sang Min Lee, Joong Hun Kim
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Patent number: 11183813Abstract: Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.Type: GrantFiled: January 9, 2019Date of Patent: November 23, 2021Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Ho Jae Kang, Jung Hun Jang
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Patent number: 10374124Abstract: A light emitting device, according to one embodiment, may comprise: a substrate having a pattern part disposed on the upper surface thereof; a first buffer layer disposed on the substrate; a second buffer later disposed on the first buffer layer; a first conductive semiconductor layer disposed on the second buffer layer; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a void layer disposed on the first buffer layer corresponding to the pattern part of the substrate. By further forming a void on the buffer layer, the embodiment has the effect of more effectively preventing defects caused by a potential difference.Type: GrantFiled: May 27, 2016Date of Patent: August 6, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jung Hun Jang, Seung Keun Nam, Jeong Soon Yim, Won Hee Choi
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Publication number: 20190214788Abstract: Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.Type: ApplicationFiled: January 9, 2019Publication date: July 11, 2019Inventors: HO JAE KANG, JUNG HUN JANG
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Patent number: 10263145Abstract: A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer and generating an ultraviolet light; a second conductive semiconductor layer disposed on the active layer; and a hole injection layer disposed between the active layer and the second conductive semiconductor layer and comprising a first layer comprising AlxGa1-xN (0<x?1) and a second layer comprising GaN. The embodiment has the hole injection layer to be multi-layered, thereby having the effect of effectively preventing the absorption of ultraviolet light.Type: GrantFiled: May 27, 2016Date of Patent: April 16, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jung Hun Jang, Seung Keun Nam, Jeong Soon Yim, Won Hee Choi
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Publication number: 20180145213Abstract: A light emitting device, according to one embodiment, may comprise: a substrate having a pattern part disposed on the upper surface thereof; a first buffer layer disposed on the substrate; a second buffer later disposed on the first buffer layer; a first conductive semiconductor layer disposed on the second buffer layer; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a void layer disposed on the first buffer layer corresponding to the pattern part of the substrate. By further forming a void on the buffer layer, the embodiment has the effect of more effectively preventing defects caused by a potential difference.Type: ApplicationFiled: May 27, 2016Publication date: May 24, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Jung Hun JANG, Seung Keun NAM, Jeong Soon YIM, Won Hee CHOI
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Publication number: 20180138363Abstract: A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer and generating an ultraviolet light; a second conductive semiconductor layer disposed on the active layer; and a hole injection layer disposed between the active layer and the second conductive semiconductor layer and comprising a first layer comprising AlxGa1-xN (0<x?1) and a second layer comprising GaN. The embodiment has the hole injection layer to be multi-layered, thereby having the effect of effectively preventing the absorption of ultraviolet light.Type: ApplicationFiled: May 27, 2016Publication date: May 17, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Jung Hun JANG, Seung Keun NAM, Jeong Soon YIM, Won Hee CHOI
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Patent number: 9401405Abstract: A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer.Type: GrantFiled: April 29, 2014Date of Patent: July 26, 2016Assignee: LG INNOTEK CO., LTD.Inventor: Jung Hun Jang
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Patent number: 9312445Abstract: The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refractive indexes of the first layers decrease with increasing distance from the first semiconductor layer.Type: GrantFiled: July 17, 2014Date of Patent: April 12, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Youn Joon Sung, Jung Hun Jang, Sung Hoon Jung
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Patent number: 9076894Abstract: A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate, a transition layer disposed on the initial buffer layer, and a device structure disposed on the transition layer. The transition layer includes at least one of AlxGa1-xN (where 0<x<1) layers provided on the initial buffer layer and an inserted buffer layer provided at least one of between the AlxGa1-xN layers, at a lower end portion of the transition layer, or at an upper end portion of the transition layer.Type: GrantFiled: May 1, 2014Date of Patent: July 7, 2015Assignee: LG INNOTEK CO., LTD.Inventor: Jung Hun Jang
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Patent number: 9029911Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer includes a first nitride buffer layer having a first aluminum nitride layer on the silicon substrate and a first gallium nitride layer on the first aluminum nitride layer.Type: GrantFiled: July 31, 2012Date of Patent: May 12, 2015Assignee: LG Innotek Co., Ltd.Inventors: Jung Hun Jang, Jeong Sik Lee, Seung Keun Nam
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Publication number: 20150021620Abstract: The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refractive indexes of the first layers decrease with increasing distance from the first semiconductor layer.Type: ApplicationFiled: July 17, 2014Publication date: January 22, 2015Inventors: Youn Joon Sung, Jung Hun Jang, Sung Hoon Jung
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Publication number: 20140332849Abstract: A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer.Type: ApplicationFiled: April 29, 2014Publication date: November 13, 2014Applicant: LG INNOTEK CO., LTD.Inventor: Jung Hun JANG
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Publication number: 20140332821Abstract: A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate, a transition layer disposed on the initial buffer layer, and a device structure disposed on the transition layer. The transition layer includes at least one of AlxGa1-xN (where 0<x<1) layers provided on the initial buffer layer and an inserted buffer layer provided at least one of between the AlxGa1-xN layers, at a lower end portion of the transition layer, or at an upper end portion of the transition layer.Type: ApplicationFiled: May 1, 2014Publication date: November 13, 2014Applicant: LG INNOTEK CO., LTD.Inventor: Jung Hun Jang
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Patent number: 8723158Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.Type: GrantFiled: February 7, 2012Date of Patent: May 13, 2014Assignee: LG Innotek Co., Ltd.Inventors: Jung Hun Jang, Jeong Sik Lee, Jeong Soon Yim, Byeoung Jo Kim, Seung Keun Nam
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Patent number: 8426844Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.Type: GrantFiled: July 8, 2011Date of Patent: April 23, 2013Assignee: LG Innotek Co., Ltd.Inventors: Yong Tae Moon, Yong Seon Song, Jong hak Won, Jeong Sik Lee, Jung Hun Jang
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Publication number: 20130037819Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer includes a first nitride buffer layer having a first aluminum nitride layer on the silicon substrate and a first gallium nitride layer on the first aluminum nitride layer.Type: ApplicationFiled: July 31, 2012Publication date: February 14, 2013Inventors: Jung Hun JANG, Jeong Sik Lee, Seung Keun Nam
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Publication number: 20120138893Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.Type: ApplicationFiled: February 7, 2012Publication date: June 7, 2012Inventors: Jung Hun Jang, Jeong Sik Lee, Jeong Soon Yim, Byeoung Jo Kim, Seung Keun Nam