Abstract: A light-emitting device according to one embodiment of the present invention comprises: a substrate; a plurality of light-emitting diode chips positioned on the substrate; a plurality of light-transmitting layers positioned on the top surfaces of the plurality of light-emitting diode chips; a sidewall portion surrounding the plurality of light-emitting diode chips and the plurality of light-transmitting layers; and a first groove positioned on the top surface of at least a portion of the sidewall portion positioned between the light-transmitting layers, wherein the first groove has a width smaller than a shortest width from an adjacent light-transmitting layer to the first groove and has a depth smaller than the thickness of the closest light-transmitting layer.

Abstract: The present disclosure relates to a light-emitting device. The light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

Abstract: A light emitting module includes a light emitting diode chip mounted on a first surface of a support substrate, a wavelength conversion member formed on a light emitting surface of the light emitting diode chip, and a reflection member formed to surround a side surface of the wavelength conversion member, an electrode pad formed on a second surface of the support substrate to be electrically connected with the light emitting diode chip, a circuit board formed with a circuit pattern which is electrically connected with the electrode pad, and a conductive bonding material formed between the electrode pad and the circuit pattern to electrically connect the electrode pad and the circuit pattern. Coefficients of thermal expansion of the support substrate, the electrode pad and the conductive bonding material are different, and a coefficient of thermal expansion gradually increases from the support substrate to the circuit board.

Abstract: The present disclosure relates to a light-emitting device. The light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

Abstract: A light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

Abstract: A light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

Abstract: A light emitting device having a wavelength converting layer. The light emitting device includes a substrate; a semiconductor stack having a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer disposed on the substrate; a first wavelength converting layer covering a top of the semiconductor stack; and a second wavelength converting layer disposed on the first wavelength converting layer and having a width narrower than the first wavelength converting layer. The second wavelength converting layer is employed, thereby being capable of reducing a color variation according to a viewing angle.

Abstract: A light emitting device having a wavelength converting layer. The light emitting device includes a substrate; a semiconductor stack having a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer disposed on the substrate; a first wavelength converting layer covering a top of the semiconductor stack; and a second wavelength converting layer disposed on the first wavelength converting layer and having a width narrower than the first wavelength converting layer. The second wavelength converting layer is employed, thereby being capable of reducing a color variation according to a viewing angle.