Abstract: A flame-retardant sheet attaching device is disclosed. The flame-retardant sheet attaching device may include a first pressurizing device configured to move in a first direction and apply pressure to a flame-retardant sheet, and a second pressurizing device configured to move in the first direction, the second pressurizing device having at least a portion inserted into a groove of the flame-retardant sheet. The flame-retardant sheet may be configured to move, based on the movement of the second pressurizing device, in a second direction, perpendicular to the first direction. The first pressurizing device may be configured to restrict the movement of the flame-retardant sheet in the first direction, when the flame-retardant sheet moves in the second direction.

Abstract: Provided is an actuator system which includes an electroactive polymer film, and a spring surrounded by the electroactive polymer film. At least a portion of the spring is disposed inside the electroactive polymer film.

Abstract: A modified conjugated diene-based polymer and a rubber composition including the same are disclosed herein. The modified conjugated diene-based polymer has excellent processability and good tensile strength and viscoelasticity. In some embodiments, a modified conjugated diene-based polymer includes silicon (Si) and nitrogen (N), and has an N content of 150 ppm or more based on the weight of the modified conjugated diene-based polymer and a rate of change of mooney viscosity (MVR) of 20% or less.

Abstract: A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.

Abstract: The present discloses provides a memory device and a method of operating the memory device. The memory device includes first main plugs formed in a vertical direction over a substrate and arranged in a first direction, second main plugs, third main plugs arranged between the first and second main plugs, the third main plugs adjacent to the first and second main plugs, and bit lines above the first to third main plugs, wherein each of the first to third main plugs includes first and second sub-plugs facing each other, wherein portions of the first and second sub-plugs included in each of the first and third main plugs are coupled to different select lines, and wherein portions of the first and second sub-plugs included in each of the second and third main plugs are coupled to different select lines.

Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

Abstract: A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.

Abstract: A method of displaying an application is provided. The method includes displaying an execution screen of a first application on a first area when the first application is executed, displaying the execution screen of the first application on a second area instead of on the first area when a second application is executed while the first application is executed, and displaying an execution screen of a second application on the first area.

Abstract: A memory device includes: a memory cell array including a plurality of cell plugs; a first slit isolating the memory cell array into a plurality of memory regions, the first slit extending in a first direction; and second slits penetrating the plurality of memory regions, the second slits being arranged to be spaced apart from each other in a second direction intersecting the first direction. Gate lines included in each of the plurality of memory regions may be isolated from each other by the first slit. Each gate line located in the same layer among the gate lines included in each of the plurality of memory regions may extend through a first connection region between the second slits for each corresponding memory region.

Abstract: An unmanned charging device and method for a smart logistics vehicle are disclosed. The unmanned charging device includes a charging body configured to enable a mobile robot to dock therewith and having an inner space, and a charging terminal unit inserted into the inner space of the charging body and having a front support at a front side thereof, the charging terminal unit being configured to enable charging of the mobile robot. When the mobile robot approaches the charging body in response to reception of a charging request, a sensing unit of the mobile robot is supported by the front support, thereby causing the mobile robot to be adjusted in position. Docking of the mobile robot with the charging terminal unit is performed in a position-adjusted state of the mobile robot.

Abstract: The present invention provides a compound of chemical formula 1, a compound of chemical formula 3, compound [212], compound [224], or compound [228], a pharmaceutically acceptable salt thereof, a stereoisomer thereof, a hydrate thereof, or a solvate thereof, and a pharmaceutical composition comprising same. The pharmaceutical composition has excellent antiviral efficacy, thereby having a preventive or treatment effect on viral infectious disease such as SARS-COV-2, and exhibits an inhibitory effect on IL-5 expression and thus has a preventive or treatment effect on respiratory disease or allergic disease.

Abstract: The present disclosure may provide a CHA-DDR type zeolite membrane including: a first layer including a CHA structure and a DDR structure; and a second layer which is provided on the first layer and includes a DDR structure, wherein the CHA-DDR type zeolite membrane is in the form of a film having a thickness of 100 nm to 5 ?m, including a CHA structure and a DDR structure.

Abstract: A method of providing information on medical personnel may be provided. The method according to an embodiment may include: receiving surgical information including information on a medical treatment department performing a surgery, information on an operating surgeon, surgical category information, and surgical code information; determining a score for each item that constitutes the surgical information on medical personnel on the basis of information on on-duty records of the medical personnel; determining a medical personnel score corresponding to the surgical information on the basis of a weighted value corresponding to the score for the each item; and providing information on the medical personnel that includes the medical personnel score.

Abstract: A semiconductor device may include: a first gate structure including a plurality of first conductive layers that are alternately stacked with a plurality of first insulating layers; a second gate structure including a plurality of second conductive layers that are alternately stacked with a plurality of second insulating layers; a third gate structure including third conductive layers that are alternately stacked with a plurality of third insulating layers; and a first contact plug extending into the first gate structure through the third gate structure and the second gate structure, the first contact plug connected to a first of the plurality of first conductive layers, and the first contact plug including a first inflection portion located at an interface between the second gate structure and the third gate structure.

Abstract: The present invention relates to a slurry for fabricating an electrode, an electrode, and an electrochemical cell including same. The slurry for fabricating an electrode according to the present invention includes: an electrode material; an organic binder; and two or more solvents having different solubility parameters. The electrode fabricated using the slurry for fabricating an electrode according to the present invention may have a structure in which electrode materials are dispersed and bound to a porous matrix in a network configuration.

Abstract: The present disclosure relates to a system and a method for discharging carbon monoxide (CO) by using a CO leakage alarm device and, more specifically, to a system and a method for discharging CO by using a CO leakage alarm device, the system and the method being operated on the basis of the Internet of things (IoT) so as to: detect CO leakage caused by damage to a boiler flue and sound an alarm through at least two from among the CO leakage alarm device, a boiler controller, a wall pad, and the like, automatically perform boiler ventilation and indoor air ventilation when the leakage is determined; and directly notify CO leakage-related authorities and users about the CO leakage.

Abstract: A method of displaying an application is provided. The method includes displaying an execution screen of a first application on a first area when the first application is executed, displaying the execution screen of the first application on a second area instead of on the first area when a second application is executed while the first application is executed, and displaying an execution screen of a second application on the first area.

Abstract: A modified conjugated diene-based polymer and a rubber composition including the same are disclosed herein. The modified conjugated diene-based polymer has excellent processability and good tensile strength and viscoelasticity. In some embodiments, a modified conjugated diene-based polymer includes silicon (Si) and nitrogen (N), and has an N content of 150 ppm or more based on the weight of the modified conjugated diene-based polymer and a rate of change of mooney viscosity (MVR) of 20% or less.

Abstract: A method includes measuring a linearity of a first pull-up circuit, a second pull-up circuit, a third pull-up circuit, a first pull-down circuit, a second pull-down circuit and a third pull-down circuit using an initial pull-up code and an initial pull-down code, each of the first pull-up circuit, the second pull-up circuit and the third pull-up circuit having a respective resistance value determined based on a respective pull-up code, and each of the first pull-down circuit, the second pull-down circuit and the third pull-down circuit having a respective resistance value determined based on a respective pull-down code, and determining a calibration setting indicator based on the measurement result, the calibration setting indicator indicating a calibration method of a transmission driver including the first pull-up circuit, the second pull-up circuit, the third pull-up circuit, the first pull-down circuit, the second pull-down circuit and the third pull-down circuit.

Abstract: The present discloses provides a memory device and a method of operating the memory device. The memory device includes first main plugs formed in a vertical direction over a substrate and arranged in a first direction, second main plugs, third main plugs arranged between the first and second main plugs, the third main plugs adjacent to the first and second main plugs, and bit lines above the first to third main plugs, wherein each of the first to third main plugs includes first and second sub-plugs facing each other, wherein portions of the first and second sub-plugs included in each of the first and third main plugs are coupled to different select lines, and wherein portions of the first and second sub-plugs included in each of the second and third main plugs are coupled to different select lines.