Abstract: In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Abstract: A refresh circuit is configured to generate a counting signal by counting a refresh command and to generate a plurality of preliminary refresh cycle change signals by decoding the counting signal. The refresh circuit is also configured to change a refresh cycle based on one of the plurality of preliminary refresh cycle change signals and to perform a refresh operation.

Abstract: In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Abstract: A semiconductor apparatus includes a parity operation circuit, a write latch circuit, a data processing circuit and a write path. The parity operation circuit generates a parity signal by performing an operation on operation source data. The write latch circuit generates a write parity signal by latching the parity signal according to a delayed write signal. The data processing circuit outputs write data as the operation source data in a write operation, and delays the operation source data by a time required for operation of the parity signal and outputs it as delayed data. The write path writes the delay data and the write parity signal to a memory area in the write operation.

Abstract: The present technology may include an error correction code engine configured to generate a parity bit and syndrome information by performing an operation according to operation source data, and a data processing circuit configured to simultaneously output the parity bit and first delay data, which is generated by delaying input data by a first time according to a write operation, simultaneously output the syndrome information and second delay data, which is generated by delaying input data by a second time according to a read operation, and to share substantially the same signal path in generating the first delay data and in generating the second delay data.

Abstract: The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

Abstract: In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Abstract: The present technology may include an error correction code engine configured to generate a parity bit and syndrome information by performing an operation according to operation source data, and a data processing circuit configured to simultaneously output the parity bit and first delay data, which is generated by delaying input data by a first time according to a write operation, simultaneously output the syndrome information and second delay data, which is generated by delaying input data by a second time according to a read operation, and to share substantially the same signal path in generating the first delay data and in generating the second delay data.

Abstract: The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

Abstract: A construction robot for a ceiling is provided. The construction robot includes: a robot base having an upper plate; a targeting unit on the upper plate, wherein the targeting unit moves a robotic arm assembly combined with the targeting unit, and wherein the robotic arm assembly includes: a first robotic arm where a drill is mounted, wherein a first elevating unit of the first robotic arm is elevated or lowered according to information on the ceiling, a second robotic arm where an anchor bolt inserting equipment is mounted, wherein a second elevating unit of the second robotic arm is elevated or lowered according to the information, and a third robotic arm where an impact wrench is mounted, wherein a third elevating unit of the third robotic arm is elevated or lowered likewise; and a loading unit on the upper plate or the targeting unit for providing anchor bolt assemblies.

Abstract: A construction robot for a ceiling is provided. The construction robot includes: a robot base having an upper plate; a targeting unit on the upper plate, wherein the targeting unit moves a robotic arm assembly combined with the targeting unit, and wherein the robotic arm assembly includes: a first robotic arm where a drill is mounted, wherein a first elevating unit of the first robotic arm is elevated or lowered according to information on the ceiling, a second robotic arm where an anchor bolt inserting equipment is mounted, wherein a second elevating unit of the second robotic arm is elevated or lowered according to the information, and a third robotic arm where an impact wrench is mounted, wherein a third elevating unit of the third robotic arm is elevated or lowered likewise; and a loading unit on the upper plate or the targeting unit for providing anchor bolt assemblies.

Abstract: A semiconductor apparatus may include a unit memory region, a first column main decoder, a second column main decoder, and a control circuit. The unit memory region may include a plurality of sub-memory regions. The first and second column main decoders may be configured to receive and decode a column pre-decoding signal and configured to generate a respective column select signal for controlling a column access of a respective first and second half of the plurality of sub-memory regions. The control circuit may be configured to provide the column pre-decoding signal to the first or second column main decoders based on their proximities to a sub-memory region to be enabled among the plurality of sub-memory regions.

Abstract: A semiconductor apparatus may include a unit memory region, a first column main decoder, a second column main decoder, and a control circuit. The unit memory region may include a plurality of sub-memory regions. The first and second column main decoders may be configured to receive and decode a column pre-decoding signal and configured to generate a respective column select signal for controlling a column access of a respective first and second half of the plurality of sub-memory regions. The control circuit may be configured to provide the column pre-decoding signal to the first or second column main decoders based on their proximities to a sub-memory region to be enabled among the plurality of sub-memory regions.

Abstract: An inverter circuit includes a pull-up control circuit and a pull-up drive circuit. The pull-up control circuit generates a drive signal which is enabled during a first time period in response to an input signal and an output signal. The pull-up drive circuit drives the output signal to a power supply voltage in response to the input signal and the drive signal. The pull-up drive unit drives the output signal with a first drivability during the first time period and drives the output signal with a second drivability during a second time period.

Abstract: An inverter circuit includes a pull-up control circuit and a pull-up drive circuit. The pull-up control circuit generates a drive signal which is enabled during a first time period in response to an input signal and an output signal. The pull-up drive circuit drives the output signal to a power supply voltage in response to the input signal and the drive signal. The pull-up drive unit drives the output signal with a first drivability during the first time period and drives the output signal with a second drivability during a second time period.

Abstract: A signal compensation circuit includes a first path configured to cause a source signal to pass therethrough and be outputted as a first signal; a delay block configured to output a second signal by delaying the source signal by a predetermined time; a second path configured to cause the second signal to pass therethrough and be outputted as a third signal; and a signal combination block configured to generate a compensated signal by combining the first signal and the third signal.

Abstract: An address comparator circuit includes a first determination unit suitable for activating a first control signal when a first address corresponding to a previous read command is identical with a second address corresponding to a current read command; a second determination unit suitable for activating a second control signal when the previous and current read commands are consecutively inputted to the address comparator circuit with an interval of a specific number of clocks or less; and a blocking signal generation unit suitable for generating a blocking signal that blocks data transmission between a memory array and an external device based on the first and the second control signals.

Abstract: A semiconductor system may include a first semiconductor configured to output a command signal and an address signal. The semiconductor system may include a second semiconductor device configured to include a first operation circuit including a first MOS transistor and a second operation circuit including a second MOS transistor. The first MOS transistor and the second MOS transistor may be turned on in response to a first internal command signal when a first operation is executed according to the command signal. The first MOS transistor may be turned on in response to a period signal generated from the address signal when a second operation is executed according to the command signal.

Abstract: An address comparator circuit includes a first determination unit suitable for activating a first control signal when a first address corresponding to a previous read command is identical with a second address corresponding to a current read command; a second determination unit suitable for activating a second control signal when the previous and current read commands are consecutively inputted to the address comparator circuit with an interval of a specific number of clocks or less; and a blocking signal generation unit suitable for generating a blocking signal that blocks data transmission between a memory array and an external device based on the first and the second control signals.

Abstract: A memory device include a memory array, a transmitter suitable for outputting data to the outside of the memory device, and a data bus suitable for transmitting data of a selected memory cell in the memory array to the transmitter during a read operation. When successive read commands for the same memory cell are applied, data transmission from the memory array to the data bus is blocked, and data previously loaded in the data bus is outputted through the transmitter.