Patents by Inventor Jung Hwan KIL

Jung Hwan KIL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor light emitting device
    Patent number: 11929451
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: March 12, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JuHeon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20210234072
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Application
    Filed: April 9, 2021
    Publication date: July 29, 2021
    Inventors: JuHeon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • Semiconductor light emitting device
    Patent number: 10978618
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: April 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JuHeon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20200395511
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 17, 2020
    Inventors: JuHeon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM
  • Semiconductor light emitting device
    Patent number: 10840412
    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: November 17, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • Semiconductor light emitting device
    Patent number: 10763397
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: September 1, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JuHeon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20200243721
    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Inventors: Ju Heon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM
  • Semiconductor light emitting device with increased reflectance and light emission efficiency, and suppressed peeling or migration of the reflective metal
    Patent number: 10622520
    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: April 14, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20190273185
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Application
    Filed: November 28, 2018
    Publication date: September 5, 2019
    Inventors: JuHeon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20190229242
    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
    Type: Application
    Filed: July 26, 2018
    Publication date: July 25, 2019
    Inventors: Ju Heon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM