Abstract: An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.

Abstract: A display device may include a first electrode, a second electrode, an emission layer, an intervening layer, and a first encapsulation layer. The second electrode may overlap the first electrode. The emission layer may be disposed between the first electrode and the second electrode, may overlap the first electrode, and may include a light emitting material. The intervening layer may directly contact the second electrode, may be spaced from each of the first electrode and the emission layer, and may include a fluorine compound. A first section of the first encapsulation layer may overlap the emission layer. The intervening layer may be positioned between the second electrode and a second section of the first encapsulation layer.

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

Abstract: The present invention provides an optical filter having a narrow bandpass, high transmittance in the bandpass, low transmittance outside the bandpass, little change in optical properties even when the incident angle of light changes and thus, being advantageous in terms of yield and cost per hour. In addition, the present invention may provide a LiDAR system including the optical filter and an application of the optical filter and the LiDAR system.

Abstract: We provide plasmonic structures having optical responses that are sensitive to mechanical input(s). Such plasmon resonances can be made sufficiently sensitive to deformation to enable this approach. These structures can be used in active devices, such as an optical metasurface controlled by one or more acoustic inputs, or in passive devices such as an acoustic sensor or mechanical force sensor.

Abstract: Provided is a meta-optics including a waveguide layer including a first surface and a second surface opposite to the first surface; and a plurality of meta units provided on the waveguide layer, each meta unit of the plurality of meta units including a grating configured to diffract incident light of a predetermined wavelength, a first electrode provided under the grating, a dielectric layer provided over the grating, and a second electrode provided on the dielectric layer, wherein a dielectric constant of the grating and a reflectance of the grating with respect to incident light change based on a voltage applied to the first electrode and the second electrode.

Abstract: Real-space optical signal processing is provided by optical angular filters that act on amplitude and/or phase of zero order light passing through a resonant diffractive optical device. One application is to phase contrast microscopy, where the diffractive optical device can be configured to have an amplitude and phase response suitable for phase contrast microscopy. For example, 60% or more intensity attenuation of the zero order light, combined with a phase shift of the zero order light by +/?90 degrees.

Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.

Abstract: Waveguide enhanced resonant diffraction is provided in grating structures having negligible non-resonant diffraction by the grating. This is done by making the grating thickness much less than any relevant wavelength, and by having the grating in proximity to a waveguide for diffractive coupling to and from a mode of the waveguide. Material absorption in the grating material can be used to suppress undesired diffraction orders. The resulting structures can provide rainbow-free diffractive optical sampling.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: Waveguide enhanced resonant diffraction is provided in grating structures having negligible non-resonant diffraction by the grating. This is done by making the grating thickness much less than any relevant wavelength, and by having the grating in proximity to a waveguide for diffractive coupling to and from a mode of the waveguide. Material absorption in the grating material can be used to suppress undesired diffraction orders. The resulting structures can provide rainbow-free diffractive optical sampling.

Abstract: A method and electronic device are disclosed herein. The electronic device includes a display, a communication unit, a processor and a memory storing instructions. The process executes the instructions to implement the method, including establishing wireless communication with one or more IoT devices, displaying a user interface for managing IoT devices, receiving a user input selecting a group of IoT devices, transmitting first information including user account data to an external server, transmitting second information to another device, the first information also indicating a selected group of IoT devices, and the second information causing the other device to communicatively connect with the first external server.

Abstract: Provided is a composition for etching a silicon nitride film, which contains inorganic acid, silicon compound, and water, and does not contain fluorine, and which can selectively remove the silicon nitride film, while minimizing damages to the underlying metal film and the etching rate of the silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: A method and electronic device are disclosed herein. The electronic device includes a display, a communication unit, a processor and a memory storing instructions. The process executes the instructions to implement the method, including establishing wireless communication with one or more IoT devices, displaying a user interface for managing IoT devices, receiving a user input selecting a group of IoT devices, transmitting first information including user account data to an external server, transmitting second information to another device, the first information also indicating a selected group of IoT devices, and the second information causing the other device to communicatively connect with the first external server.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.