Abstract: A curable silicone composition is provided. The curable silicone composition comprises a cadmium-free quantum dot in an amount of from about 0.01 to about 10 mass % of the composition, wherein the composition can be cured by a hydrosilylation reaction and has at least about 10 mol % of aryl groups in all silicon atom-bonded organic groups. The curable silicone composition exhibits excellent dispersibility of the quantum dot, and cures to form a cured product exhibiting excellent color conversion efficiency.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: The present invention relates to a photocurable silicone composition comprising: at least one organopolysiloxane having at least two alkenyl groups per molecule; (B) at least one mercapto functional compound having at least two thiol groups per molecule; (C) at least one photopolymerization initiator selected from acylphosphine oxide-type photopolymerization initiators and oxime ester-type photopolymerization initiators; and (D) at least one black pigment.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: The present invention relates to a curable silicone composition comprising: (A) at least one organopolysiloxane having at least two alkenyl groups per molecule; (B) at least one mercapto functional organopolysiloxane having at least two thiol groups per molecule; (C) at least one photopolymerization initiator; and, (D) 2,6-di-tert-butyl-4-methylphenol (BHT), wherein the composition has a viscosity of less than 200 mPa·s at 25° C.

Abstract: The present invention relates to a UV curable silicone composition comprising at least one organopolysiloxane having at least two alkenyl groups per molecule; at least one mercapto functional organic compound having at least two thiol groups per molecule; at least one photopolymerization initiator; and at least one polymerization inhibitor comprising at least one alkoxylated polyol derived (meth)acrylate or at least one quinone derivative compound, and/or at least one antioxidant, wherein the composition comprises the photopolymerization initiator selected from intramolecular hydrogen abstraction type photopolymerization initiators, or the composition comprises the polymerization inhibitor.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: A curable silicone composition is provided. The curable silicone composition comprises a cadmium-free quantum dot in an amount of from about 0.01 to about 10 mass % of the composition, wherein the composition can be cured by a hydrosilylation reaction and has at least about 10 mol % of aryl groups in all silicon atom-bonded organic groups. The curable silicone composition exhibits excellent dispersibility of the quantum dot, and cures to form a cured product exhibiting excellent color conversion efficiency.

Abstract: Disclosed are a light-emitting diode package and a method for manufacturing same. The method for manufacturing a light-emitting diode package comprises: preparing a package main body having a cavity and an air vent passageway which extends from the cavity; installing a light-emitting diode inside the cavity of the package main body; attaching a transparent member by means of an adhesive so as to cover the upper part of the cavity; and blocking the air vent passageway by forming a sealing member. As the air vent passageway is blocked after the transparent member is attached, the transparent member may be prevented from peeling off from the air pressure inside the cavity.

Abstract: There are provided a light emitting diode (LED) device including an LED chip emitting light within a specific wavelength region, a transparent resin layer covering a light emission surface of the LED chip, and a color conversion layer formed to be spaced apart from the LED chip by the transparent resin layer to cover the transparent resin layer and including at least one type of phosphor converting light emitted from the LED chip into light within a different wavelength region, wherein a mean free path of phosphor particles included in the color conversion layer is 0.8 mm or more at a temperature of 5500 K.

Abstract: Disclosed are a light-emitting diode package and a method for manufacturing same. The method for manufacturing a light-emitting diode package comprises: preparing a package main body having a cavity and an air vent passageway which extends from the cavity; installing a light-emitting diode inside the cavity of the package main body; attaching a transparent member by means of an adhesive so as to cover the upper part of the cavity; and blocking the air vent passageway by forming a sealing member. As the air vent passageway is blocked after the transparent member is attached, the transparent member may be prevented from peeling off from the air pressure inside the cavity.

Abstract: There are provided a light emitting diode (LED) device including an LED chip emitting light within a specific wavelength region, a transparent resin layer covering a light emission surface of the LED chip, and a color conversion layer formed to be spaced apart from the LED chip by the transparent resin layer to cover the transparent resin layer and including at least one type of phosphor converting light emitted from the LED chip into light within a different wavelength region, wherein a mean free path of phosphor particles included in the color conversion layer is 0.8 mm or more at a temperature of 5500 K.

Abstract: An LED device according to an embodiment of the present invention may include a first LED light source unit including at least one first white LED and emitting white light of a first color temperature; a second LED light source unit including at least one second white LED and emitting white light of a second color temperature different from the first color temperature; and a variable resistor connected to at least one of the first LED light source unit and the second LED light source unit, being configured to control a current supplied to the at least one of the first LED light source unit and the second LED light source unit.

Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Abstract: Provided is a vertical light emitting device having improved light extraction efficiency and a method of manufacturing the same. The vertical light emitting device may include a p type electrode, a p type semiconductor layer, an active layer, and an n type semiconductor layer which may be sequentially formed on the p type electrode, and an n type electrode on a portion of a surface of the n type semiconductor layer, wherein the portion of the surface of the n type semiconductor layer may be at an inclined plane inclined from an area near a circumference of the n type electrode towards the active layer. The p type electrode may include a current blocking layer which is made of an insulating material and on the p type electrode directly under the n type electrode. Accordingly, a voltage increase may be minimized or reduced, and light extraction efficiency may be improved.

Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Abstract: The provided semiconductor laser device includes a substrate, an active layer, a first cladding layer located between the active layer and the substrate, a second cladding layer located on the active layer, and a first electrode layer including a metal waveguide layer, which is formed of a metal having a smaller refractive index than the second cladding layer, and formed on the second cladding layer, wherein the first electrode layer is formed to operate as a waveguide.

Abstract: The present invention is about phased array antenna using gain switched multimode Fabry-Perot laser diode (FP-LD) and high-dispersion fiber. More particularly, the invention deals with techniques that allow compact and low-cost system implementation for phased array antenna adopting optical control and also allows continuous time delay for each antenna in the array to induce phase difference.

Abstract: A system for measuring chromatic dispersion in an optical fiber includes a multimode laser diode adapted to generate an optical pulse through gain switching; a highly dispersive optical fiber adapted to allow the optical output pulse to pass therethrough, and then adapted to separate each mode of the multimode laser diode to generate a reference signal; a test optical fiber adapted to allow an optical pulse for each wavelength separated by the highly dispersive optical fiber to pass therethrough to vary a repetition rate of the optical pulse train due to a chromatic dispersion characteristic of the test optical fiber using the optical pulse as the reference signal; and a high speed photodetector and RF spectrum analyzer adapted to detect eh variation of the repetition rate of the optical pulse train due to the chromatic dispersion characteristic of the test optical fiber.