Abstract: A calibration device is coupled to a communication line shared by plural devices. The calibration device is configured to perform an iterative eye width scanning by adjusting a set voltage level by a preset level from a first voltage level to a reference center voltage level, wherein the first voltage level corresponds to a cross point where values of signals or data, which are transmitted via the communication lines, are changed in different directions; and determine, as a zero crossing for the signals or the data, a voltage level corresponding to a largest value among a plurality of eye widths obtained through the iterative eye width scanning.

Abstract: A method for performing sidelink groupcast transmission by a transmission terminal includes the steps of: classifying reception terminals belonging to a subject group into two or more subgroups; allocating different groupcast feedback schemes to the two or more subgroups; performing groupcast transmission to the reception terminals; and receiving feedback information from terminals belonging to at least one subgroup among the two or more subgroups according to the different groupcast feedback schemes.

Abstract: Discussed is a battery movement detection apparatus that may include a speed sensor configured to obtain speed information of a tray accommodating a battery, a power supply unit configured to provide a driving power, an environment sensor configured to obtain environment information about a surrounding environment of the battery movement detection apparatus, a communication unit configured to transmit the speed information to a battery position detection apparatus, and a controller configured to calculate an available limit of the power supply unit based on the environment information and control an operation of the communication unit based on the available limit of the power supply unit.

Abstract: A display device including: a substrate; a first electrode on the substrate; a pixel defining layer having a pixel opening, wherein the first electrode is in the pixel opening; a light emitting layer in the pixel opening; a second electrode on the light emitting layer and the pixel defining layer; an encapsulation layer on the second electrode; a first sensing electrode part on the encapsulation layer; a first sensing insulating layer on the first sensing electrode part; a second sensing electrode part and a reflective layer positioned on the first sensing insulating layer; and a first light blocking layer and a second light blocking layer on the first sensing insulating layer; wherein at least a portion of a lower surface of the reflective layer is inclined.

Abstract: An operation method of an IAB node in a communication system may comprise: measuring a power difference between a first signal received from a first node and a second signal received from a second node; controlling a transmit power of each of the first node and the second node based on the power difference; generating scheduling information for allowing the first node and the second node to simultaneously transmit signals; transmitting the scheduling information to the first node and the second node; and receiving signals that the first node and the second node simultaneously transmit according to the scheduling information by using the transmit power.

Abstract: A memory device includes a memory block to which a plurality of lines are connected. The memory device also includes a plurality of memory cells respectively connected to word lines among the plurality of lines, wherein the plurality of memory cells are formed as a plurality of plug holes formed in a stack structure between a drain select line among the plurality of lines and a slit. The memory device further includes a plurality of page buffers connected to the plurality of memory cells through a plurality of bit lines among the plurality of lines. The memory device additionally includes a peripheral circuit for performing a read operation on the plurality of memory cells. The peripheral circuit includes a voltage generator configured to control a signal applied to the plurality of page buffers so that the read operation is performed according to positions of the plug holes.

Abstract: A semiconductor device may include a gate structure including a first conductive layer, a second conductive layer, and a third conductive layer, the third conductive layer being disposed between the first conductive layer and the second conductive layer and thicker than the first conductive layer and the second conductive layer, channel structures passing through the gate structure, and an isolation structure including a first portion passing through the second conductive layer and extended into the channel structures and a second portion protruding from the first portion into the third conductive layer and disposed between the channel structures.

Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a gate stacked body including interlayer insulating layers and conductive patterns that are alternately stacked in a vertical direction on a substrate, a channel structure penetrating at least a portion of the gate stacked body, and an upper surface of the channel structure left exposed by the gate stacked body.

Abstract: A memory device includes a memory block to which a plurality of lines are connected. The memory device also includes a plurality of memory cells respectively connected to word lines among the plurality of lines, wherein the plurality of memory cells are formed as a plurality of plug holes formed in a stack structure between a drain select line among the plurality of lines and a slit. The memory device further includes a plurality of page buffers connected to the plurality of memory cells through a plurality of bit lines among the plurality of lines. The memory device additionally includes a peripheral circuit for performing a read operation on the plurality of memory cells. The peripheral circuit includes a voltage generator configured to control a signal applied to the plurality of page buffers so that the read operation is performed according to positions of the plug holes.

Abstract: A semiconductor device includes a plurality of first memory strings each first memory string having a channel with a first length and a plurality of second memory strings each second memory string having a channel with a second length shorter than the first length. A method of operating the semiconductor device includes: performing a first read operation on the first read unit, wherein the first read unit includes the first memory cells sharing the same first word line among first memory cells included in the plurality of the first memory strings; and performing a second read operation on the second read unit, wherein the second read unit includes the second memory cells sharing the same second word line among second memory cells included in the plurality of the second memory strings.