Abstract: A method of determining characteristics of a signal and an apparatus using the method. The apparatus for determining characteristics of a signal includes: a level detector receiving sample values of a radio frequency (RF) signal and binary data obtained by binarizing the RF signal, generating selection signals based on the binary data, classifying each of the sample values of the RF signal into one of a plurality of levels using the selection signals, and outputting average values of sample values of each level; and a signal characteristics determiner determining a characteristics value that indicates the characteristics of the RF signal using the average values of the sample values belonging to each level.

Abstract: An apparatus and a method for driving a voice coil actuator of a camera are disclosed. In the apparatus for driving a voice coil actuator of a camera, when an input shaping execution unit generates a shaping signal using a resonance frequency of the voice coil actuator to output a drive control signal subjected to input shaping, a drive circuit unit controls an operation of the voice coil actuator connected to a rear end according to the drive control signal using the shaping signal as an initial input. The shaping signal is used for removing resonance of the voice coil actuator and may be one of a 2-step shaping signal, a multi-step shaping signal having 4 or more steps, a linear shaping signal, a toggle shaping signal and the like.

Abstract: A zoom lens and a photographing device including the zoom lens. The zoom lens includes: a first lens group having a negative refractive power; a second lens group having a positive refractive power; and a third lens group having a positive refractive power, which are sequentially arranged in a direction from an object side to an image side, wherein the first lens group comprises a first lens that is biconcave and is closest to the object side. Accordingly, a compact and low-priced zoom lens having a high magnification may be manufactured.

Abstract: Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.

Abstract: Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.

Abstract: A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.

Abstract: The present invention relates to a miRNA regulating the insulin signaling pathway, and to a method for screening a material for controlling the action of a target gene thereof, and particularly, to a method for screening a material for controlling the action of USH or FOG2, a target gene of miR-8 or miR-200 miRNA for promoting cell growth. The present inventors discovered miR-8, a conserved miRNA for regulating the body of a fruit fly by targeting u-shaped material (USH) in the fat cells of Drosophila. It was also confirmed that a target gene of miR-200, a human homologous gene of Drosophila miR-8 miRNA, is FOG2. It was found that Drosophila miR-8 and USH are also conserved in mammals, and FOG2, a human homologous gene of USH, directly binds to a regulating subunit of PI3K and functions. It was confirmed that when the expression of miR-200 is inhibited or FOG2 is expressed in a human cancer cell line, the activity of PI3K, which promotes cell growth, is decreased.

Abstract: Disclosed is a cooling fluid path structure for a superconducting rotating machine, which includes: a fixed inlet fluid path fixed together with the fluid supply means; a rotating inlet fluid path adjacently connected to an outlet of the fixed inlet fluid path, which is for transferring the cooling fluid transferred from the fixed inlet fluid path to a cooling fluid path inlet provided in the rotor while rotating together with the rotor; a rotating outlet fluid path rotating together with the rotor, to which the cooling fluid discharged from a cooling fluid path outlet of the rotor is transferred; and a fixed outlet fluid path adjacently connected to the rotating outlet fluid path, which is for transferring the cooling fluid transferred from the rotating outlet fluid path to the fluid supply means while being fixed together with the fluid supply means, wherein the rotating outlet fluid path and the fixed outlet fluid path are disposed in such a manner that they surround outside of the rotating inlet fluid pat

Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Abstract: Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process.

Abstract: Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.

Abstract: The present invention relates to a hyperthermophilic DNA polymerase and a preparation method thereof. The invention provides a novel hyperthermophilic DNA polymerase isolated from a Thermococcus sp. strain, a functional equivalent thereof, a protein having the amino acid sequence thereof, and a preparation method thereof. The DNA polymerase according to the invention is a DNA polymerase, which is hyperthermophilic and has an elongation ability and fidelity higher than those of prior commercial DNA polymerases. Thus, the DNA polymerase according to the invention will be useful in precision analysis, precision diagnosis, identification and the like, which require accurate PCR.

Abstract: A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.

Abstract: A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.

Abstract: A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide of a Group 5 element, such as niobium (Nb) or vanadium (V).

Abstract: Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density.

Abstract: A method and apparatus provide an Internet service in a mobile communication terminal. The method includes determining a user interest subject from user data existing within the mobile communication terminal, collecting service items through network access, determining a subject for each of the collected service items, determining relevance between the user interest subject and each of the service items, and recommending a service item according to the relevance.

Abstract: Disclosed is a wafer type solar cell and a method for manufacturing the same, which facilitates to enhance hole-collecting efficiency, and to improve cell efficiency by preventing transmittance of solar ray from being lowered, the wafer type solar cell comprising a first semiconductor layer of a semiconductor wafer; a second semiconductor layer doped with P-type dopant, wherein the second semiconductor layer is formed on one surface of the first semiconductor layer, on which solar ray is incident; a third semiconductor layer doped with N-type dopant, wherein the third semiconductor layer is formed on the other surface of the first semiconductor layer; a first passivation layer on the second semiconductor layer; a second passivation layer on the third semiconductor layer; a first electrode connected with the second semiconductor layer; and a second electrode connected with the third semiconductor layer.