Abstract: An analog switch circuit in a successive approximation register analog-to-digital converter for a wide sampling rate includes a first PMOS switch controlled by a voltage of a second control node, second PMOS switch controlled by a control voltage, a first control switch unit controlling voltages of first and second control nodes, a first NMOS switch controlled by a voltage of a fourth control node, a second NMOS switch controlled by the control voltage und, and a second control switch unit controlling voltages of third and fourth control nodes.

Abstract: In a method of forming patterns, first and second upper reverse patterns are formed on a lower reverse layer. A buffer layer is formed to fill first opening portions provided by the first upper reverse pattern. A shield pattern is formed to cover a second region of the buffer layer. An etching process is performed using the shield pattern and the first upper reverse pattern as an etching mask to form first lower reverse patterns providing second openings overlapping first openings, a buffer layer pattern and a second lower reverse pattern overlapping the shield pattern. A hard mask layer is formed and etched to separate hard mask layer first patterns filling the first and second openings. An etching process is performed using the hard mask layer first patterns and the second upper reverse patterns as etching masks to form third lower reverse patterns overlapping the second upper reverse pattern.

Abstract: In a method of forming patterns, first and second upper reverse patterns are formed on a lower reverse layer. A buffer layer is formed to fill first opening portions provided by the first upper reverse pattern. A shield pattern is formed to cover a second region of the buffer layer. An etching process is performed using the shield pattern and the first upper reverse pattern as an etching mask to form first lower reverse patterns providing second openings overlapping first openings, a buffer layer pattern and a second lower reverse pattern overlapping the shield pattern. A hard mask layer is formed and etched to separate hard mask layer first patterns filling the first and second openings. An etching process is performed using the hard mask layer first patterns and the second upper reverse patterns as etching masks to form third lower reverse patterns overlapping the second upper reverse pattern.

Abstract: A fine pattern structure includes a lower hard mask layer on a pattern formation layer having a first region and a second region, first upper hard mask patterns disposed on the lower hard mask layer in the first region to expose portions of the lower hard mask layer, a second upper hard mask pattern covering the lower hard mask layer in the second region, guide patterns on the first and second upper hard mask patterns, neutralization patterns on the exposed portions of the lower hard mask layer in the first region, a first block co-polymer layer covering the guide patterns in the first region and the neutralization patterns, and a second block co-polymer layer covering the guide pattern in the second region.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: The present invention relates to a suspension for a sound transducer. The present invention discloses a suspension for a sound transducer, to which a diaphragm and voice coil of the sound transducer are attached and which guides the vibrations of the diaphragm and voice coil, comprising: a central portion to which a voice coil is attached; an outer peripheral portion resting on a frame; and a connecting portion connecting the central portion and the outer peripheral portion, wherein the central portion has a mold portion, which is molded by heat or pressure to take the place of a center diaphragm.

Abstract: A fine pattern structure includes a lower hard mask layer on a pattern formation layer having a first region and a second region, first upper hard mask patterns disposed on the lower hard mask layer in the first region to expose portions of the lower hard mask layer, a second upper hard mask pattern covering the lower hard mask layer in the second region, guide patterns on the first and second upper hard mask patterns, neutralization patterns on the exposed portions of the lower hard mask layer in the first region, a first block co-polymer layer covering the guide patterns in the first region and the neutralization patterns, and a second block co-polymer layer covering the guide pattern in the second region.

Abstract: The present invention relates to an assembly structure of a diaphragm for a microspeaker. The present invention discloses a bonding structure of a diaphragm for a microspeaker, the boding structure comprising: a suspension including a central portion, an outer peripheral portion, and a connecting portion connecting the central portion and the outer peripheral portion; and a side diaphragm including an inner peripheral portion and an outer peripheral portion, which are attached to the central portion and outer peripheral portion of the suspension, respectively, and a dome portion, which projects between the inner peripheral portion and the outer peripheral portion, wherein the suspension and the side diaphragm are attached by thermal compression.

Abstract: A method for fine pattern structures includes forming a pattern formation layer over a first region and a second region of a substrate, forming a first block co-polymer layer in the first region, forming a second block co-polymer layer in the second region, etching the first and second block co-polymer layers, and forming the fine pattern structure in the pattern formation layer in the first region without forming a pattern in the pattern formation layer in the second region.

Abstract: A method for fine pattern structures includes forming a pattern formation layer over a first region and a second region of a substrate, forming a first block co-polymer layer in the first region, forming a second block co-polymer layer in the second region, etching the first and second block co-polymer layers, and forming the fine pattern structure in the pattern formation layer in the first region without forming a pattern in the pattern formation layer in the second region.

Abstract: The present invention relates to an assembly structure of a diaphragm for a microspeaker. The present invention discloses a bonding structure of a diaphragm for a microspeaker, the boding structure comprising: a suspension including a central portion, an outer peripheral portion, and a connecting portion connecting the central portion and the outer peripheral portion; and a side diaphragm including an inner peripheral portion and an outer peripheral portion, which are attached to the central portion and outer peripheral portion of the suspension, respectively, and a dome portion, which projects between the inner peripheral portion and the outer peripheral portion, wherein the suspension and the side diaphragm are attached by thermal compression.

Abstract: Methods of fabricating nano-scale structures are provided. A method includes forming a first hard mask pattern corresponding to first openings in a dense region, forming first guide elements on the first hard mask pattern aligned with the first openings, and forming second hard mask patterns in a sparse region to provide isolated patterns. A blocking layer is formed in the sparse region to cover the second hard mask patterns. A first domain and second domains are formed in the dense region using a phase separation of a block co-polymer layer. Related nano-scale structures are also provided.

Abstract: The present invention relates to a suspension for a sound transducer. The present invention discloses a suspension for a sound transducer, to which a diaphragm and voice coil of the sound transducer are attached and which guides the vibrations of the diaphragm and voice coil, comprising: a central portion to which a voice coil is attached; an outer peripheral portion resting on a frame; and a connecting portion connecting the central portion and the outer peripheral portion, wherein the central portion has a mold portion, which is molded by heat or pressure to take the place of a center diaphragm.

Abstract: The present invention relates to an assembly structure of a diaphragm for a microspeaker. The present invention discloses a bonding structure of a diaphragm for a microspeaker, the boding structure comprising: a suspension including a central portion, an outer peripheral portion, and a connecting portion connecting the central portion and the outer peripheral portion; and a side diaphragm including an inner peripheral portion and an outer peripheral portion, which are attached to the central portion and outer peripheral portion of the suspension, respectively, and a dome portion, which projects between the inner peripheral portion and the outer peripheral portion, wherein the suspension and the side diaphragm are attached by thermal compression.

Abstract: Provided are a conductive film and a method of manufacturing the same. The conductive film includes a substrate, a first conductive layer formed on the substrate, and a patterned second conductive layer formed on the first conductive layer. Here, oxide layers are formed on top and side surfaces of the second conductive layer. The conductive film may prevent defects of the conductive layer caused by rapid oxidation or damage to the substrate, and increase emission uniformity.

Abstract: A method for forming a semiconductor device is disclosed. A method for forming a semiconductor device includes forming a first sacrificial hard mask layer over a semiconductor substrate including an etch layer, forming a first spacer over the first sacrificial hard mask layer, forming a first sacrificial hard mask pattern by etching the first sacrificial hard mask layer using the first spacer as an etch mask, forming a second spacer at both sidewalls of the first sacrificial hard mask pattern, partially isolating the second spacer, and forming a pad pattern over the second spacer. As a result, a line-and-space pattern such as a control gate of the NAND flash memory and a pad portion coupled to a drain contact in an X-decoder of a peripheral circuit region can be easily implemented.