Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

Abstract: An image sensor includes a substrate including a pixel region, the substrate extending in a first direction and a second direction intersecting the first direction, first and second photoelectric conversion regions disposed in the pixel region and adjacent to each other in a first direction, a deep device isolation pattern penetrating the substrate in a third direction perpendicular to the first and second directions, and surrounding the pixel region, the deep device isolation pattern comprising first extensions extending in the second direction between the first and second photoelectric conversion regions, the first extensions spaced apart from each other in the second direction, a plurality of first transfer gate electrodes vertically overlapping with the first photoelectric conversion region, and a plurality of second transfer gate electrodes vertically overlapping with the second photoelectric conversion region.

Abstract: An image sensor includes a pixel array including a plurality of pixel groups, each of the plurality of pixel groups including a plurality of unit pixels and sharing a single microlens, the plurality of unit pixels in each of the plurality of pixel groups including color filters of the same color, and a control logic configured to group the plurality of unit pixels of each of the plurality of pixel groups into a plurality of subgroups and to drive the pixel array for each subgroup. The plurality of subgroups include a first subgroup and a second subgroup. The control logic may be configured to obtain first image data corresponding to the first subgroup and second image data corresponding to the second subgroup, and the first subgroup and the second subgroup are provided with at least one unit pixel therebetween in the first direction or the second direction.

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

Abstract: An image sensor is provided. The image sensor includes: a pixel array including first and second pixel groups, each of which includes unit pixels arranged in 4×4 array, each of the unit pixels including a photodiode provided, and the first and second pixel groups being alternately disposed in multiple directions; a logic circuit configured to acquire pixel signals from the unit pixels; first microlenses provided on corresponding unit pixels in the first pixel groups; and second microlenses provided on four corresponding unit pixels of the unit pixels included in the second pixel groups. Each of the first and second pixel groups includes a device isolation layer provided between the unit pixels, and a color filter provided on the first surface, and each of the second pixel groups includes an overflow region configured to move electrical charges between adjacent photodiodes.

Abstract: An image sensor includes a pixel array including a plurality of pixel groups, each of the plurality of pixel groups including a plurality of unit pixels and sharing a single microlens, the plurality of unit pixels in each of the plurality of pixel groups including color filters of the same color, and a control logic configured to group the plurality of unit pixels of each of the plurality of pixel groups into a plurality of subgroups and to drive the pixel array for each subgroup. The plurality of subgroups include a first subgroup and a second subgroup. The control logic may be configured to obtain first image data corresponding to the first subgroup and second image data corresponding to the second subgroup, and the first subgroup and the second subgroup are provided with at least one unit pixel therebetween in the first direction or the second direction.

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

Abstract: Provided is an image sensor including a pixel array including a plurality of auto focus (AF) pixels and a plurality of normal pixels, wherein each of the plurality of AF pixels comprises two sub-pixels, a light blocking member provided between the two sub-pixels, and a lens corresponding to the two sub-pixels, and wherein the light blocking member is shifted from an intermediate point of the two sub-pixels.

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.

Abstract: Provided is an image sensor including a pixel array including a plurality of auto focus (AF) pixels and a plurality of normal pixels, wherein each of the plurality of AF pixels comprises two sub-pixels, a light blocking member provided between the two sub-pixels, and a lens corresponding to the two sub-pixels, and wherein the light blocking member is shifted from an intermediate point of the two sub-pixels.

Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.