Patents by Inventor Jung-il An

Jung-il An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240172350
    Abstract: Disclosed is a lighting effect directing method of a receiving device. The lighting effect directing method of a receiving device includes determining coordinates of the receiving device at a seat based on seat information thus received, receiving and storing object data including a predefined direction shape and at least one expression level set to correspond to a size of the direction shape, and predefined color data, receiving a control packet including object information indicating the direction shape, an object origin of the direction shape, and the at least one expression level, and color information indicating a light emission color, determining a location relationship between the object origin and the determined coordinates of the receiving device, based on the object information, and performing a corresponding light emission operation such that the direction shape is expressed at the at least one expression level, based on the location relationship and the color information.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Applicant: FANLIGHT CO., LTD.
    Inventors: Kyung Il CHOI, Jung Min CHOI, Hyun Gil KIM
  • Publication number: 20240170821
    Abstract: A battery pack includes a battery module having at least one battery cell, a pack case configured to accommodate the battery module, and a connection guide unit provided on at least one side of the pack case and configured to be accessible to electrical members of two or more connection types.
    Type: Application
    Filed: December 19, 2022
    Publication date: May 23, 2024
    Applicant: LG ENERGY SOLUTION, LTD.
    Inventors: Jong-Chan SHIN, Ki-Youn KIM, JUNG-IL PARK, Young-Bo CHO, Byung-Hyuk CHOI
  • Patent number: 11991878
    Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.
    Type: Grant
    Filed: April 12, 2023
    Date of Patent: May 21, 2024
    Assignee: SK keyfoundry Inc.
    Inventors: Kwang Il Kim, Yang Beom Kang, Jung Hwan Lee, Min Kuck Cho, Hyun Chul Kim
  • Publication number: 20240161978
    Abstract: A multilayer electronic component including: a body including a dielectric layer and internal electrodes; and external electrodes disposed outside the body and connected to the internal electrodes, wherein 1.5?Hfs/Hfc?5.0 when the internal electrode includes hafnium (Hf), Hfc indicates an average Hf content (at %) in a center of the internal electrode, and Hfs indicates an average Hf content (at %) in the internal electrode, measured from the center of the internal electrode to an interface thereof in contact with the dielectric layer.
    Type: Application
    Filed: March 28, 2023
    Publication date: May 16, 2024
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Jun HWANG, Jin Kyung PARK, Sun Il JEONG, Gil Yong LEE, Su Ji KANG, Mun Seong JEONG, Won Seok JANG, Jung Min KIM
  • Publication number: 20240158602
    Abstract: The present invention relates to a method of recycling C-14 in a spent resin, the method includes: i) heating a spent resin raw material including 14CO2 in the presence of moisture by microwave irradiation; ii) refluxing, by condensation, water vapor in a first processing gas produced by the microwave irradiation and released from the spent resin raw material; and iii) removing water vapor from the first processing gas by the refluxing, and transporting a second processing gas including 14CO2, which is released from the spent resin raw material, to the outside, and to an apparatus for recycling the same.
    Type: Application
    Filed: October 31, 2023
    Publication date: May 16, 2024
    Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE
    Inventors: Ki Rak LEE, Hwan Seo PARK, Geun Il PARK, Ga Yeong KIM, Jung Hoon CHOI, Hyun Woo KANG
  • Patent number: 11979227
    Abstract: An operation method of a relay node may include: receiving, from a first communication node, first data composed of n bits; receiving, from a second communication node, second data composed of m bits; in response to determining that n is greater than m, generating first T-data of m bits excluding (n-m) bits from the n-bits of the first data and first R-data of (n-m) bits; generating third data by performing a network coding operation on the first T-data and the second data; transmitting the third data to the first communication node; and transmitting the third data and the first R-data to the second communication node.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: May 7, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jun Hyeong Kim, Gyu Il Kim, Go San Noh, Hee Sang Chung, Dae Soon Cho, Sung Woo Choi, Seung Nam Choi, Jung Pil Choi
  • Patent number: 11967614
    Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.
    Type: Grant
    Filed: April 7, 2022
    Date of Patent: April 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Gil Yang, Seung Min Song, Soo Jin Jeong, Dong Il Bae, Bong Seok Suh
  • Publication number: 20240124404
    Abstract: The present invention relates to a composition for preventing, improving, or treating diseases related to advanced glycation end products, comprising an indole derivative or a pharmaceutically acceptable salt thereof. Specifically, the composition of the present invention possesses the effect of trapping methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.
    Type: Application
    Filed: December 11, 2023
    Publication date: April 18, 2024
    Inventors: Seung Yong SEO, San Ha LEE, Jung Eun LEE, Joon Seong HUR, Sang Il KWON, Sun Yeou KIM, Seong Min HONG, Min Cheol KANG, Myoung Gyu PARK, Eun Joo LEE
  • Publication number: 20240124399
    Abstract: The present invention relates to a novel indole derivative and a use thereof. The novel indole derivative according to the present invention traps methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.
    Type: Application
    Filed: December 11, 2023
    Publication date: April 18, 2024
    Inventors: Seung Yong SEO, San Ha LEE, Jung Eun LEE, Joon Seong HUR, Sang Il KWON, Sun Yeou KIM, Seong Min HONG, Min Cheol KANG, Myoung Gyu PARK, Eun Joo LEE
  • Publication number: 20240120393
    Abstract: A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.
    Type: Application
    Filed: June 14, 2023
    Publication date: April 11, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jisoo PARK, Myung Il KANG, Ji Wook KWON, Jung Han LEE, Subin CHOI
  • Patent number: 11956937
    Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: April 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-Il Kim, Jung-Gun You, Gi-Gwan Park
  • Publication number: 20240112781
    Abstract: Disclosed are a product surface inspecting apparatus and method which detect a defect on products having different feature using a previously trained artificial neural network. A product surface inspecting apparatus according to an exemplary embodiment includes a sensor unit which photographs a product to generate image data and measures at least one of a color, a saturation, a brightness, a transparency, and a reflectance of the product; and a detection unit which detects a defect on a product by inputting the image data to a convolutional neural network trained to detect a defect on a product surface, the number of convolution layers of the convolutional neural network may be determined based on at least one of the color, the saturation, the brightness, the transparency, and the reflectance of the product.
    Type: Application
    Filed: December 15, 2023
    Publication date: April 4, 2024
    Inventors: Jung Ywn PARK, Ha Il JUNG, Jeong Hyun PARK
  • Patent number: 11948481
    Abstract: A display device includes a display panel including one surface, on which an image is displayed, and an opposing surface opposite to the one surface; a support plate disposed on the opposing surface of the display panel and including one surface facing the display panel, an opposing surface opposite to the one surface thereof, where a plurality of openings is defined through the support plate from the one surface to the opposing surface thereof in a thickness direction such that the support plate further includes inclined inner peripheral surfaces defining the plurality of openings; and a coating layer disposed to surround the one surface of the support plate, the opposing surface of the support plate, and the inner peripheral surfaces of the support plate defining the plurality of openings.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: April 2, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jung Hun Lee, Jung Il Lee, Ji Heon Lee
  • Publication number: 20240104756
    Abstract: An apparatus for measuring a depth of a tread groove may include: a camera module capturing a video including an upper end portion of a tire while rotating around an upper end portion of the tire having a plurality of tread grooves, the video including a plurality of frames; a control module obtaining, based on the plurality of frames, a cross-sectional width of the tire in units of pixels by adding widths and depths of each of the plurality of tread grooves in units of pixels, a width of an inner block in units of pixels, and a width of an outer block in units of pixels, the inner and outer blocks are disposed on the tire; and a conversion module converting the depth of the tread groove in units of pixels into the depth in units of pixels.
    Type: Application
    Filed: January 6, 2023
    Publication date: March 28, 2024
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Jung Mo KOO, Kyoung Soo WE, Hye Yeon LEE, Gwang Jin KIM, Hyung Il KOO
  • Publication number: 20240090840
    Abstract: Provided is a bio-adhesive device including an adhesive material layer, an electronic device layer, and a protective film layer to have advantages of being harmless to the human body, being naturally degraded in the body without a separate removal process, and capable of observing the movement of internal organs more closely in real time from outside the body.
    Type: Application
    Filed: June 21, 2023
    Publication date: March 21, 2024
    Inventors: Dong Soo Hwang, Hyung Joon Cha, Tae Il Kim, Jung Ki Jo
  • Publication number: 20240096663
    Abstract: Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.
    Type: Application
    Filed: March 27, 2023
    Publication date: March 21, 2024
    Applicant: SEMES CO., LTD.
    Inventors: Soo Han SONG, Jung Bong CHOI, Kang Seop YUN, Young Il LEE, Min Ok KANG
  • Patent number: 11935479
    Abstract: According to some aspects of the disclosure, an organic light-emitting display device including a display panel including a driving thin film transistor (TFT), comprises a sensing unit configured to perform a sensing operation for external compensation of the display panel, and an analog-digital converter (ADC) configured to perform a conversion operation of converting an analog value held in the sensing unit into a digital value, wherein the sensing unit comprises a basic sensing unit configured to perform a sensing operation on the driving TFT, and a dummy sensing unit configured to perform a sensing operation on changes in a gain and an offset of the ADC, and the basic sensing unit and the dummy sensing unit are in a cascade connection to each other.
    Type: Grant
    Filed: July 21, 2023
    Date of Patent: March 19, 2024
    Assignee: DB GlobalChip Co., Ltd.
    Inventors: Cheon Wi Park, Jung Il Seo, Jae Hong Ko
  • Patent number: 11936372
    Abstract: A slew rate adjusting circuit includes an adjustment transistor configured to provide an adjustment current into an output port of an arithmetic amplifier, a first transistor connected between a power line of the arithmetic amplifier and the adjustment transistor, and a second transistor connected between the first transistor and an output node of the output port, wherein the adjustment transistor is turned on by the second transistor in response to a difference between an input voltage and an output voltage being equal to or greater than a reference voltage, and the adjustment current is provided to the output port in response to the adjustment transistor being turned on.
    Type: Grant
    Filed: March 22, 2023
    Date of Patent: March 19, 2024
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Jung Hoon Sul, Dong Il Seo
  • Patent number: 11924729
    Abstract: Disclosed is a lighting control system for directing a show. The system includes at least: a master device; and a plurality of slave devices that receive lighting control signals from the master device. The light control signals correspond to seats of a plurality of audiences in an auditorium. The plurality of slave devices receive position information indicating specific positions at which the plurality of slave devices emit a light, light-emitting status information including preset information to classify the plurality of slave devices into a plurality of groups, and group identification number information. The plurality of slave devices are grouped in accordance with received information. The master device controls the grouped plurality of slave devices to emit a light per group basis by broadcasting the lighting control signals including group light-emitting pattern information for each of the plurality of groups of the plurality of slave devices.
    Type: Grant
    Filed: March 1, 2023
    Date of Patent: March 5, 2024
    Assignee: Hanam Artec Co., Ltd.
    Inventors: Gil Won Lee, Ho Lim Song, Jung Min Choi, Kyung Il Choi
  • Patent number: 11923456
    Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: March 5, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Gil Yang, Beom-Jin Park, Seung-Min Song, Geum-Jong Bae, Dong-Il Bae