Patents by Inventor Jung-Im Huh

Jung-Im Huh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEVICE AND METHOD GENERATING INTERNAL VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20120213018
    Abstract: A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
    Type: Application
    Filed: May 3, 2012
    Publication date: August 23, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soo-Bong Chang, Doo-Young Kim, Jung-Im Huh
  • Device and method generating internal voltage in semiconductor memory device
    Patent number: 8189406
    Abstract: A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: May 29, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Bong Chang, Doo-Young Kim, Jung-Im Huh
  • DEVICE AND METHOD GENERATING INTERNAL VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20110090746
    Abstract: A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
    Type: Application
    Filed: December 27, 2010
    Publication date: April 21, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soo-Bong CHANG, Doo-Young KIM, Jung-Im HUH
  • Device and method generating internal voltage in semiconductor memory device
    Patent number: 7864599
    Abstract: A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Bong Chang, Doo-Young Kim, Jung-Im Huh
  • DEVICE AND METHOD GENERATING INTERNAL VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20090207674
    Abstract: A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
    Type: Application
    Filed: February 17, 2009
    Publication date: August 20, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soo-Bong Chang, Doo-Young Kim, Jung-Im Huh