Patents by Inventor Jung-In La

Jung-In La has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • WET ETCHING SOLUTION
    Publication number: 20120007019
    Abstract: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.
    Type: Application
    Filed: September 20, 2011
    Publication date: January 12, 2012
    Applicant: CHEIL INDUSTRIES, INC.
    Inventors: Jung In LA, Myung Kook PARK, Ho Seok YANG
  • Wet etching solution
    Patent number: 8043525
    Abstract: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: October 25, 2011
    Assignee: Cheil Industries, Inc.
    Inventors: Jung In La, Myung Kook Park, Ho Seok Yang
  • Composition for etching silicon oxide and method of forming a contact hole using the same
    Publication number: 20110073801
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Application
    Filed: November 30, 2010
    Publication date: March 31, 2011
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In LA, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
  • Composition for etching silicon oxide and method of forming a contact hole using the same
    Patent number: 7879736
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: February 1, 2011
    Assignees: Samsung Electronics Co., Ltd., Cheil Industries, Inc.
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In La, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
  • COMPOSITION FOR ETCHING SILICON OXIDE AND METHOD OF FORMING A CONTACT HOLE USING THE SAME
    Publication number: 20080121622
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 29, 2008
    Applicants: SAMSUNG ELECTRONICS CO., LTD., CHEIL INDUSTRIES, INC.
    Inventors: Dong-Won HWANG, Kook-Joo KIM, Jung-In LA, Pil-Kwon JUN, Seung-Ki CHAE, Yang-Koo LEE
  • Wet etching solution
    Publication number: 20080041823
    Abstract: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.
    Type: Application
    Filed: August 20, 2007
    Publication date: February 21, 2008
    Inventors: Jung In La, Myung Kook Park, Ho Seok Yang