Abstract: A communication method and system for converging a fifth generation (5G) communication system for supporting higher data rates beyond a fourth generation (4G) system with a technology for internet of things (IoT) are provided. The communication method and system includes intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A system and a method of beam failure recovery on Secondary cell are provided.

Abstract: A lithium secondary battery including a negative electrode, a positive electrode, a first electrolyte layer facing the negative electrode; and a second electrolyte layer present on the first electrolyte layer, wherein the first electrolyte layer has a higher ion conductivity than the second electrolyte layer, and a lithium secondary battery comprising the electrolyte described above.

Abstract: A modified IgG4 Fc fragment useful as a drug carrier is disclosed. When coupled to a drug, the resulting drug-IgG4 Fc conjugate can minimize the effector functions of the IgG4 Fc and the chain exchange with in vivo IgG while maintaining in vivo activity and improving in vivo duration of the drug conjugate.

Abstract: A semiconductor memory device includes a substrate, at least one floating gate electrode, an interlayer dielectric layer, an interconnection structure, an etching stop layer, a conductive structure, and an opening. The floating gate electrode is disposed on the substrate. The interlayer dielectric layer is disposed on the floating gate electrode. The interconnection structure is disposed in the interlayer dielectric layer. The etching stop layer is disposed on the interlayer dielectric layer. The conductive structure penetrates the etching stop layer and is electrically connected with the interconnection structure. The opening penetrates the etching stop layer and overlaps at least a part of the floating gate electrode in a thickness direction of the substrate.

Abstract: A multilayer ceramic electronic component includes a ceramic body, and first and second external electrodes disposed on the surface of the ceramic body, respectively. The ceramic body includes a capacitance forming portion including a dielectric layer and internal electrodes, margin portions disposed on both sides of the capacitance forming portion, and cover portions disposed on both sides of the capacitance forming portion. The first and second external electrodes include first and second base electrodes, respectively, first and second conductive layers disposed on edges of the first and second base electrodes, respectively, and first and second terminal electrodes covering the first and second base electrodes, respectively.

Abstract: Systems, methods, and instrumentalities are described herein that may be used for NOMA resource selection. Different types of NOMA resources may be configured by a network and selected by a WTRU based on rules, priorities, fairness, overloading factors, multiple access signature sizes, measurement results, payload sizes, and/or the like. Single-NOMA operations may be performed using DFT-invariant codewords. Multiple NOMA schemes may coexist with different codeword types and/or codeword sizes.

Abstract: An electronic device having an electronic board function and an operation method thereof. The electronic device includes: a display; a touch input interface; a memory storing at least one instruction; and a processor configured to execute the at least one instruction stored in the memory to: display a writing area in a display area of the display; detect a predefined touch input in the writing area; and based on detecting the predefined touch input, reduce the writing area, display the reduced writing area in at least first part of the display area and provide an extended area in at least second part of the display area, the extended area being configured to receive a writing input continuing from the reduced writing area to the extended area.

Abstract: A method for operating a graph processing system including a first and second memory, comprising: storing in the first memory, a start index, a terminal index and an edge value of graph data; storing in the second memory, a start vertex of the graph data; rearranging the start vertex as an intermediate vertex by using to the start index; performing a graph computation on the intermediate vertex by using to the terminal index and the edge value; storing in the second memory, a terminal vertex as a result of the graph computation; determining whether a graph processing operation is completed by comparing the terminal vertex and the start vertex; setting the terminal vertex as the start vertex when the graph processing operation is not completed; and iterating the rearranging, the performing, the storing the terminal vertex, the determining and the setting until the graph processing operation is completed.

Abstract: A memory controller may control a memory device including a first storage area and a second storage area. The memory controller may include: a memory operation controller and a block information manager. The memory operation controller may control the memory device to perform a block merge operation of programming data stored in a victim block among normal blocks of the first storage area to a target block among the normal blocks, and perform a data migration operation of copying data stored in blocks of the first storage area to blocks of the second storage area. The block information manager may store block map information indicating whether each of the blocks of the first storage area is a normal block or a merge block. The target block may be changed from a normal block to a merge block by the block merge operation.

Abstract: An annuloplasty device is disclosed comprising first and second support rings being configured to be arranged as a coil in a first configuration around an axial direction, wherein the first and second support rings are configured to be arranged on opposite sides of native heart valve leaflets of a heart valve, wherein the first and second support rings are separated with a first pitch distance in the axial direction, in the first configuration, wherein the first and second support rings are configured to assume a contracted state having a second pitch distance in the axial direction being shorter than the first pitch distance, and wherein the first and second support rings are configured to be transferable between the first configuration and the contracted state to pinch the heart valve leaflets. A method of repairing a defective heart valve is also disclosed.

Abstract: The present invention relates to a chromium-free metal surface treatment composition comprising 10-30 parts by weight of a silane-based compound, 0.5-6 parts by weight of an organic acid, 0.1-3 parts by weight of a vanadium compound, 0.1-3 parts by weight of a magnesium compound, 0.5-3 parts by weight of a wax and a balance of a solvent. The metal surface treatment composition of the present invention can ensure slip resistance and required properties such as corrosion resistance and workability, thereby enabling a metal material to be prevented from slipping or falling off during processing, pipe making and the like.

Abstract: The present disclosure relates to a fiber for manufacturing a stretchable hydrophobic fiber article, the fiber including silica nanoparticles which are surface-modified such that the silica nanoparticles include a hydrocarbon chain, and a styrene-based thermoplastic elastomer, a stretchable hydrophobic fiber article manufactured therefrom, and a manufacturing method thereof. A fiber and a fiber article according to the present disclosure may have high hydrophobicity, preferably both superhydrophobicity and elasticity. Further, as the fiber and fiber article have excellent mechanical stability and chemical durability, the fiber and fiber article may stably exhibit the aforementioned high hydrophobicity and elasticity even under the harsh conditions.

Abstract: An embodiment comprises: a housing including a first corner portion, a second corner portion, a third corner portion, and a fourth corner portion; a bobbin disposed within the housing; a coil disposed on the bobbin; a magnet disposed in the housing while being arranged opposite to the coil; a circuit board disposed on one side of the housing and including a position sensor; and a sensing magnet disposed on the bobbin while being arranged opposite to the position sensor, wherein: the magnet comprises a first magnet disposed in the first corner portion of the housing, and a second magnet disposed in the second corner portion opposite to the first corner portion of the housing; the position sensor is disposed closer to the third corner portion than to the first corner portion; and no magnet is disposed in the third corner portion of the housing.

Abstract: A test operation condition of a volatile memory device is set such that an error probability is increased based on the test operation condition, compared to a normal operation condition for a normal operation of the volatile memory device. A test mode is set with respect to a test object region corresponding to at least a portion of a memory cell array included in the volatile memory device. A test operation of the volatile memory device is performed based on the test operation condition during the test mode to detect error position information of errors in data stored in the test object region. A runtime repair operation is performed with respect to the volatile memory device based on the error position information.

Abstract: A drawer of a clothes treating machine includes a drawer frame that extends in a lengthwise direction and defines an inner space, and a storage unit disposed in the inner space of the drawer frame and configured to accommodate a clothes treatment agent therein. The drawer frame includes a housing accommodation part that defines a space separated from the inner space, a clothes treatment agent housing that is configured to be inserted into the housing accommodation part, and a protruding portion that separates the housing accommodation part and the clothes treatment agent housing from each other.

Abstract: A package structure and a formation method of a package structure are provided. The method includes forming a conductive structure over a carrier substrate and disposing a semiconductor die over the carrier substrate. The method also includes forming a protective layer to surround the conductive structure and the semiconductor die. The method further includes forming an insulating layer over the protective layer. The insulating layer has an opening exposing a portion of the conductive structure. In addition, the method includes forming a conductive layer over the insulating layer. The conductive layer fills the opening, and the conductive layer has a substantially planar top surface.

Abstract: Provided are a three-dimensional electronic device manufactured through a polymer frame solvent-plasticizing process and a method for manufacturing the three-dimensional electronic device including a polymer frame configured to have a planar figure-like shape so as to have a polygonal bottom and adjacent surfaces which are formed to be extended from respective edges of the bottom; and a flexible electronic device which is transferred to the polymer frame. The polymer frame is exposed to organic solvent vapor and has a change in Young's modulus.

Abstract: A chemical mechanical polishing method including preparing a polishing pad including a polishing surface having an elastic modulus at room temperature of about 300 MPa to about 400 MPa, positioning a semiconductor structure having a surface, wherein the surface and the polishing surface of the polishing pad face each other, supplying polishing slurry including nano-abrasive having an average particle diameter of less than about 10 nm between the surface of the semiconductor structure and the polishing surface of the polishing pad, and contacting the surface of the semiconductor structure with the polishing surface of the polishing pad to polish the surface with the polishing slurry. A method of manufacturing a semiconductor device including the the chemical mechanical polishing method, a polishing pad used in the method, and a chemical mechanical polishing device.

Abstract: A quantum dot composition includes quantum dots and a leveling agent, wherein the leveling agent includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2: A light-emitting device and a method of manufacturing the same are also provided.

Abstract: Techniques for processing video data are described. The techniques include determining a first partition and a second partition for a current block coded in geometric partition mode, determining a first and second prediction block based on a first and second motion vector, blending the first prediction block and the second prediction block based on weights indicative of an amount to scale samples in the first prediction block and the second prediction block to generate a final prediction block, dividing the current block into a plurality of sub-blocks, determining a set of sub-blocks that each include at least one sample that corresponds to a prediction sample in the final prediction block that was generated based on equal weighting of a sample in the first prediction block and a sample in the second prediction block, and storing respective bi-prediction motion vectors for each sub-block in the determined set of sub-blocks.