Abstract: The disclosure relates to a display device including an oxide semiconductor pattern. The disclosure provides a driving thin film transistor and a switching thin film transistor using an oxide semiconductor pattern as an active layer. Each of the driving thin film transistor and the switching thin film transistor includes a light shielding pattern. The light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding pattern including the semiconductor material layer, each of the driving thin film transistor and the switching thin film transistor exhibits an increase in threshold voltage and, as such, freedom of circuit design is secured.

Abstract: The disclosure provides an array substrate of a thin film transistor including an oxide semiconductor pattern, and a display device using the same. The thin film transistor array substrate includes a substrate including an active area and a non-active area disposed around the active area, and a first thin film transistor disposed on the substrate. The first thin film transistor includes a first oxide semiconductor pattern disposed on the substrate, a first gate electrode disposed under the first oxide semiconductor pattern while overlapping with the first oxide semiconductor pattern, a first source electrode and a first drain electrode disposed on the first oxide semiconductor pattern and connected to the first oxide semiconductor pattern, and a first light shielding pattern disposed over the first oxide semiconductor pattern and electrically connected to one of the first source electrode and the first drain electrode while overlapping with the first oxide semiconductor pattern.

Abstract: A display apparatus is provided. The display apparatus may include a light-emitting device and a pixel driving circuit electrically connected to the light-emitting device. The pixel driving circuit may supply a driving current corresponding to a data signal to the light-emitting device according to a gate signal. For example, the pixel driving circuit may include at least one thin film transistor. The thin film transistor may include an active pattern comprising an oxide semiconductor. A source region of the active pattern overlaps a source semiconductor pattern, and a drain region of the active pattern overlaps a drain semiconductor pattern. The source semiconductor pattern and the drain semiconductor pattern may include n-type impurities. A channel region of the active pattern may be outside the source semiconductor pattern and the drain semiconductor pattern. Thus, in the display apparatus, reliability of the pixel driving circuit may be improved.

Abstract: Disclosed is a prediction method of glomerular filtration rate (GFR) from urine samples after kidney transplantation to provide an information needed for predict renal function after the transplantation, more particularly to a prediction method of glomerular filtration rate (GFR) from urine samples after kidney transplantation, which comprises detecting metabolic profiles of five biomarkers, 5a-androst-3-en-17-one (AS), glycocholic acid (GC), sphingosine (SG), tryptophan (TR) and histidine (HT), from urine samples of patients. Glomerular filtration rate (GFR) after kidney transplantation can be predicted more rapidly and precisely to provide an information needed for predict renal function after the transplantation by using five metabolites as biomarkers. The method provides more specific, sensitive, and reliable biomarkers that monitor clinical outcomes and adverse renal events after kidney transplantation, such as rejection, drug toxicity, delayed graft function, and infection.