Abstract: An apparatus and method for detecting radiation, which can improve the resolution of a radiation image and contribute to the simplification of the manufacture of the apparatus, are provided.

Abstract: An apparatus and method for detecting radiation are provided.

Abstract: A digital X-ray detector is provided, and the digital X-ray detector includes an X-ray detection array configured to detect an X-ray image when a subject is irradiated with X-ray; a support board configured to support a lower part of the X-ray detection array and have a bottom surface thereon a plurality of spaced-apart first joining portions are formed; an external case configured to accommodate the X-ray detection array and the support board and have an inner bottom surface thereon a plurality of second joining portions are formed to correspond to the plurality of first joining portions; and shock absorption members configured to be vertically arranged between the bottom surface of the support board and the inner bottom surface of the external case, each shock absorption member having an upper end to be coupled to the first joining portion and a lower end to be coupled to the second joining portion.

Abstract: An apparatus and method for detecting radiation are provided. The apparatus includes an upper electrode layer transmitting radiation; a first photoconductive layer becoming photoconductive upon exposure to the radiation and thus generating charges therein; a charge trapping layer trapping therein the charges generated in the first photoconductive layer; a second photoconductive layer becoming photoconductive upon exposure to rear light for reading out a radiation image; a lower transparent electrode layer charged with the charges trapped in the charge trapping layer; a micro lens layer disposed between the lower transparent electrode layer and a rear light emission unit and including a plurality of micro lenses respectively corresponding to a plurality of pixels; and the rear light emission unit applying the rear light to the second photoconductive layer via the micro lens layer and the lower transparent electrode layer in units of the pixels.

Abstract: An apparatus and method for detecting radiation, which can improve the resolution of a radiation image and contribute to the simplification of the manufacture of the apparatus, are provided.

Abstract: An apparatus and method for detecting radiation are provided.

Abstract: An apparatus and method for detecting radiation, which can improve the resolution of a radiation image and contribute to the simplification of the manufacture of the apparatus, are provided.

Abstract: A grid apparatus of an X-ray detecting apparatus is provided. The grid apparatus includes an X-ray absorbing material for absorbing X-rays that are scattered from an object, and an X-ray passing material formed between the X-ray absorbing materials to allow X-rays to pass therethrough. The X-ray absorbing material and the X-ray passing material form a line pattern forming a predetermined angle with a line pattern of pixels of an X-ray detector. The grid apparatus enables simpler implementation of a grid noise reduction algorithm and reduces the time and labor for reducing grid noise.

Abstract: Provided are a high-voltage power supply apparatus and method for supplying high-voltage power to a digital flat panel X-ray detector to accelerate the separation of charges ionized upon the irradiation of the digital flat panel X-ray detector with X-rays. The high-voltage power supply apparatus includes a power source outputting high-voltage power; a path determiner providing a supply path for supplying the high-voltage power to the digital flat panel X-ray detector and a short-circuit path for short-circuiting the high-voltage power; and a path controller determining the supply path and the short-circuit path. Therefore, it is possible to prevent an overshoot of the waveform of the high-voltage power. In addition, it is possible to improve the uniformity of a radiation image and reduce the time taken to obtain a radiation image by quickly discharging charges when the high-voltage power is short-circuited.

Abstract: A structure which prevents the distortion of the TFT characteristics caused by an electric charge formed on the surface of a protecting layer which exists on the TFT and a method for manufacturing the TFT. A switching device of an X-ray sensor comprises a TFT provided on a transparent substrate, a first protecting insulation layer which covers the TFT, storage capacity electrodes connected to a ground wire on the first protecting insulation layer, a second protecting insulation layer which covers the storage capacity electrode formed on the first protecting insulation layer, and a pixel electrode connected to one terminal of the TFT on the second protecting insulation layer, at least one portion of the storage capacity electrodes shielding the TFT region.

Abstract: A structure which prevents the distortion of the TFT characteristics caused by an electric charge formed on the surface of a protecting layer which exists on the TFT and a method for manufacturing the TFT. A switching device of an X-ray sensor comprises a TFT provided on a transparent substrate, a first protecting insulation layer which covers the TFT, storage capacity electrodes connected to a ground wire on the first protecting insulation layer, a second protecting insulation layer which covers the storage capacity electrode formed on the first protecting insulation layer, and a pixel electrode connected to one terminal of the TFT on the second protecting insulation layer, at least one portion of the storage capacity electrodes shielding the TFT region.

Abstract: An X-ray image sensor which includes: a photoelectric conversion part effecting electric charges in accordance with received amount of X-ray; a pixel electrode for collecting the electric charges; a storage capacitor for storing the electric charges collected in the pixel electrode, having a first capacitor electrode, a dielectric layer deposited on the first capacitor electrode and a second capacitor electrode on the dielectric layer, the second capacitor electrode contacting the pixel electrode through a first contact hole formed in a protection film on the second capacitor electrode; and a switching part controlling release of electric charges stored in the storage capacitor to an outer circuit. By the present invention, the switching characteristics of the TFT is enhanced by way of forming a two-layered protection film of silicon nitride and BCB on the channel portion of TFT, the capacity of the parasitic capacitor, which exists between the pixel electrode and the TFT, can be decreased.

Abstract: A method of manufacturing an inverse-staggered self-aligned thin film transistor on a substrate having a front surface and a back surface is provided. The method includes the steps of (a) forming a gate electrode over the front surface of the substrate,(b) forming a gate insulating layer over the gate electrode,(c) forming a semiconductor active layer over the gate insulating layer adjacent the gate electrode. The method further includes the steps of (d) forming an impurity-doped semiconductor layer over the active layer and (e) radiating a laser beam from the back side of the substrate using the gate electrode as a mask to substantially crystallize portions of the active layer and the impurity-doped semiconductor layer to define source and drain regions in the active layer.

Abstract: A method and system for manufacturing a semiconductor device having a semiconductor layer using a pulsed laser includes the steps of generating a laser beam using a solid laser source, generating a multi-harmonic wave from the laser beam using a multi-harmonic oscillator, filtering the multi-harmonic wave, and irradiating the filtered wave onto the semiconductor layer.