Abstract: A device for managing a temperature according to an embodiment of the present disclosure includes a conversion controller that estimates an indoor set temperature based on a temperature of air returned from a target zone and an operating time of a state converter, and controls a state conversion amount of the state converter by comparing the estimated indoor set temperature with the temperature of the returned air, and a heat exchanger for varying the temperature of the returned air and providing the air whose temperature is varied to the target zone.

Abstract: A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.

Abstract: The present invention is to provide a method for manufacturing a silicon nanowire array comprising (a) preparing a porous metal film; (b) placing the porous metal film in contact with a silicon substrate; and (c) etching the silicon substrate with a silicon etching solution. The present invention allows manufacturing vertically aligned large-area silicon nanowires by using the porous metal film as a catalyst and manufacturing nanowires having a porous structure, a porous nodular structure, an inclined structure and a zig-zag structure, which are distinguishable from nanowires of the prior art in their shape and crystallographic orientation, by adjusting etching conditions such as the composition of the silicon etching solution and the etching temperature in the step in which the silicon substrate is subjected to wet etching.

Abstract: Provided are a method and apparatus for processing image data in a printer, in which page description language (PDL) data is analyzed and generated as standard color data, the generated standard color data is converted to a plurality of printer outputting colors, image conversion processes are parallely performed on the printer outputting colors, and printing data is generated on a page-by-page basis based on the printer outputting colors to which the image conversion processes are performed.

Abstract: Provided is a method and apparatus of creating printing data, the method includes: classifying a plurality of objects that are to be printed into a plurality of groups; generating a page description language (PDL) section for each group to include commands for establishing attributes that are to be used in their respective group; and creating PDL data for the objects by combining the PDL sections.