Abstract: Disclosed herein is a battery case made of a laminate sheet including an outer coating layer made of a weather-resistant polymer, an inner sealant layer made of a thermally bondable polymer, and a barrier layer interposed between the outer coating layer and the inner sealant layer, wherein an electrode assembly configured to be bent or curved in conformity with the shape of a device, in which a battery cell is mounted, is received in the battery case, and a pattern is formed on at least one surface of the battery case that faces an outer surface of the electrode assembly.

Abstract: A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.

Abstract: Disclosed is a method for manufacturing a laser diode used as a light source in an optical communication system. The method comprises the steps of: forming a first photoresist pattern arranged at an interval corresponding to a predetermined grating cycle on the entire front surface of a semiconductor layer where a diffraction grating is to be formed; forming a diffraction-grating layer by etching the underlying semiconductor layer using the first photoresist pattern as an etching mask; forming a mask pattern on the diffraction-grating layer except for a predetermined diffraction-grating area; removing the mask pattern formed on top of parts of the diffraction-grating layer to be removed; and, removing the mask pattern resulting in the removal of the exposed parts of the diffraction-grating layer.

Abstract: A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.

Abstract: Disclosed is a method for manufacturing a laser diode used as a light source in an optical communication system. The method comprises the steps of: forming a first photoresist pattern arranged at an interval corresponding to a predetermined grating cycle on the entire front surface of a semiconductor layer where a diffraction grating is to be formed; forming a diffraction-grating layer by etching the underlying semiconductor layer using the first photoresist pattern as an etching mask; forming a mask pattern on the diffraction-grating layer except for a predetermined diffraction-grating area; removing the mask pattern formed on top of parts of the diffraction-grating layer to be removed; and, removing the mask pattern resulting in the removal of the exposed parts of the diffraction-grating layer.

Abstract: Disclosed is a method of producing an electron-absorption modulator having a reverse mesa structure. In the electron-absorption modulator, a first clad of a first conductivity type, an active layer of the first conductivity type, a second clad layer of a second conductivity type and an ohmic contact layer of the second conductivity type are formed on a semiconductor substrate of the first conductivity type. Then, a predetermined mask pattern is formed on the ohmic contact layer. Afterwards, the ohmic contact layer is etched by using the mask pattern. Then, the second clad layer and the active layer below the ohmic contact layer are etched in the form of the reverse mesa structure to expose the first clad layer. Then, the first clad layer is etched at a predetermined depth in the form of a mesa structure.

Abstract: An improved system for preventing scattering of glass pieces during a vehicle accident, which is capable of preventing scattering of glass pieces when a vehicle accident occurs, whereby it is possible to protect a driver or passengers in the vehicle from being injured due to the scattering glass pieces. The system includes a high viscosity liquid tank disposed in an engine room and filled with high viscosity liquid, a motor for pumping the high viscosity liquid from the high viscosity liquid tank, a collision detection sensor for detecting a collision of a vehicle, a controller for controlling the motor, and a plurality of spraying nozzles for spraying the high viscosity liquid, whereby the high viscosity liquid is sprayed toward the windshield at the moment of a vehicle accident for bonding the windshield.