Abstract: A light-emitting device is provided, having an enlarged area of active luminescence region to enhance the brightness, mainly comprising a second epitaxy layer and at least one first epitaxy layer provided on a die substrate in turn. On the top surface of the first epitaxy layer, there are provided with at least one first electrode, and a plurality of second electrodes passing through the first epitaxy layer, insulated with the first epitaxy layer by means of an electrode insulation layer, and electrically connected to the second epitaxy layer, in which the first electrode and the second electrodes are alternately arranged. Moreover, first power supply circuits and second power supply circuits are provided on a power supply substrate at positions based on the locations of the first electrode and second electrodes so as to be adhesively electrically connected to the first electrode and the second electrodes, correspondingly.

Abstract: A light-emitting device is provided. The device is with an enlarged active light-emitting region, mainly comprising a LED substrate provided with a first material layer and a second material layer on the top surface thereof in turn, and a PN junction formed between the first material layer and the second material layer naturally. Moreover, a first extended trench, allowed for passing through the second material layer and a part of the first material layer, is provided, and a first extended electrode is disposed inside the first extended trench. The electrical connection between the first extended electrode and the first electrode disposed on one part of top surface of the second material layer is made, such that the first electrode may be located at a horizontal level approximately identical to that of a second electrode equally disposed at the other part of top surface of the second material.

Abstract: A light emitting diode package structure includes an insulating carrier base formed with a recess or a through hole. The recess or the through hole has a depth enough for completely accommodating a light emitting diode. The recess or the through hole may have two stepwise portions for providing two intermediate mesa planes. Two planar metal layers are separately formed on the two intermediate mesa planes and, respectively, connected to two metal pads which are arranged outside of the recess or the through hole. Two wiring lines connect two electrodes of the light emitting diode with the two planar metal layers, respectively. A resin fills the recess or the through hole for sealing all of the light emitting diode and the two wiring lines.

Abstract: A light emitting diode package structure includes an insulating carrier base formed with a recess or a through hole. The recess or the through hole has a depth enough for completely accommodating a light emitting diode. The recess or the through hole may have two stepwise portions for providing two intermediate mesa planes. Two planar metal layers are separately formed on the two intermediate mesa planes and, respectively, connected to two metal pads which are arranged outside of the recess or the through hole. Two wiring lines connect two electrodes of the light emitting diode with the two planar metal layers, respectively. A resin fills the recess or the through hole for sealing all of the light emitting diode and the two wiring lines.

Abstract: A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.

Abstract: The present invention discloses a light-emitting diode with enhanced light-emitting efficiency, in which the active current is prevented from flowing in the region under the top electrode so that the light-emitting efficiency as well as the brightness can be improved.

Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

Abstract: A light emitting diode package structure includes an insulating carrier base formed with a recess or a through hole. The recess or the through hole has a depth enough for completely accommodating a light emitting diode. The recess or the through hole may have two stepwise portions for providing two intermediate mesa planes. Two planar metal layers are separately formed on the two intermediate mesa planes and, respectively, connected to two metal pads which are arranged outside of the recess or the through hole. Two wiring lines connect two electrodes of the light emitting diode with the two planar metal layers, respectively. A resin fills the recess or the through hole for sealing all of the light emitting diode and the two wiring lines.

Abstract: A light-emitting device array is provided. The light-emitting diode array is with functions of accurately positioning and light-guiding provided by a plurality of light-outputting windows, comprising a plurality of light-outputting windows, regularly arranged and presented as taper mode as well, chiseled into a circuit board, at least one connecting line corresponding to each light-outputting window being provided on the circuit board. The light-emitting device array with a plurality of light-emitting devices may be mounted onto said circuit board, such that each light-emitting device is resided in the corresponding light-outputting window, and the electrode of each light-emitting device may be contacted with the corresponding connecting line, resulting in electrically connecting to a control IC. Two isolated layers, i.e.

Abstract: A forming method and a structure of a high efficiency electro-optics device are disclosed. In the present invention, the cell-fixing surface between the die carrier and the electro-optics cell is decreased to increase the light emitting and absorbing regions of the electro-optics device. Thus, the operating efficiency and the sensitivity of the electro-optics device is increased substantially. Especially, the present invention has the advantage of fully showing the efficacy of device using the transparent substrate. Furthermore, when the electro-optics cell is fixing on the cell-fixing surface by utilizing the eutectic or metal-melting bonding method, a result of self-alignment can be achieved. Thus, the accuracy of the packaging device is increased substantially, thereby reducing the loss caused by the failure of poor cell-fixing while in mass production and meanwhile increasing the accuracy of fixing cell. Therefore, the present technology is quite suitable for use in the packaging of high precision.

Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

Abstract: The present invention discloses a light-emitting diode with enhanced light-emitting efficiency, in which the active current is prevented from flowing in the region under the top electrode so that the light-emitting efficiency as well as the brightness can be improved.

Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

Abstract: A forming method and a structure of a high efficiency electro-optics device are disclosed. In the present invention, the cell-fixing surface between the die carrier and the electro-optics cell is decreased to increase the light emitting and absorbing regions of the electro-optics device. Thus, the operating efficiency and the sensitivity of the electro-optics device is increased substantially. Especially, the present invention has the advantage of fully showing the efficacy of device using the transparent substrate. Furthermore, when the electro-optics cell is fixing on the cell-fixing surface by utilizing the eutectic or metal-melting bonding method, a result of self-alignment can be achieved. Thus, the accuracy of the packaging device is increased substantially, thereby reducing the loss caused by the failure of poor cell-fixing while in mass production and meanwhile increasing the accuracy of fixing cell. Therefore, the present technology is quite suitable for use in the packaging of high precision.