Abstract: A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.

Abstract: A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.

Abstract: A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.

Abstract: An apparatus for manufacturing a semiconductor device and a method of manufacturing a capacitor of a semiconductor device prevents the decrease of the surface area of a hemispherical grained (HSG) film formed on a lower electrode of the capacitor of the semiconductor device due to the abrasion of the HSG film during a subsequent cleaning process. The method of manufacturing a capacitor includes: forming a lower electrode of a capacitor of a semiconductor device over a specific structure formed on a semiconductor substrate; forming a hemispherical grained (HSG) film on an exposed surface of the lower electrode; stabilizing the HSG film in order to prevent the decrease of the surface area of the HSG film due to the abrasion of the HSG film during subsequent cleaning. The apparatus for manufacturing a semiconductor device includes a first process chamber for formation of the HSG film on a lower electrode of a capacitor of the semiconductor device and a second process chamber which stabilizes the HSG film.