Abstract: The present invention provides a liquid level control system and method. The present invention achieves a uniformly soaking process of a substrate during different segments of a fixed time period, by using a liquid removal device to gradually remove a processing liquid from a tank. The substrate is disposed in the liquid in the tank to be wet processed. By the removal of the liquid from the tank via the liquid removal device, an area of the portion of the substrate being processed by the liquid can be gradually decreased whereby the substrate can be uniformly processed.

Abstract: An exemplary electro-wetting display (EWD) device (30) includes a first substrate (31), a second substrate (38), a driving circuit layer (32) provided on the second substrate, a plurality of partition walls (34), a first fluid (35) and a second fluid (36). The first and second fluids immiscible with each other are disposed between the driving circuit layer and the first substrate. The partition walls are provided on the driving circuit layer, thereby defining a plurality of pixel regions (R). Each pixel region has two short sides and two long sides. The second fluid is electro-conductive or polar and the first fluid is provided between the driving circuit layer and the second fluid. The driving circuit layer corresponding to each pixel region includes a pixel electrode (325) and a switch element (324) connected thereto. The pixel electrode is continuously disposed between the switch element and the two short sides.

Abstract: An electro-wetting display device includes a first substrate; a second substrate opposite to the first substrate; a plurality of side walls interposed between the first and second substrates, the side walls being arranged in a matrix and cooperating with the first and second substrates to form a plurality of spaces; a first polar liquid disposed in each of the spaces; a second, colored, non-polar liquid disposed in each of the spaces. The second liquid is immiscible with the first liquid. The second substrate includes a reflective electrode and a hydrophobic insulating layer disposed on the reflective electrode. The reflective electrode includes a first metal layer and a transparent protective layer, and the transparent protective layer is interposed between the metal layer and the hydrophobic insulating layer.

Abstract: An exemplary organic light emitting diode (20) includes a substrate (21), a first electrode (22) with a plurality of fluorinions therein, an organic emission stack (29), and a second electrode (28) sequentially stacked in that order. A related method for fabricating the organic emitting diode is also provided.

Abstract: An exemplary electro-wetting display (EWD) device (30) includes a first substrate (31), a second substrate (38), a driving circuit layer (32) provided on the second substrate, a plurality of partition walls (34), a first fluid (35) and a second fluid (36). The first and second fluids immiscible with each other are disposed between the driving circuit layer and the first substrate. The partition walls are provided on the driving circuit layer, thereby defining a plurality of pixel regions (R). Each pixel region has two short sides and two long sides. The second fluid is electro-conductive or polar and the first fluid is provided between the driving circuit layer and the second fluid. The driving circuit layer corresponding to each pixel region includes a pixel electrode (325) and a switch element (324) connected thereto. The pixel electrode is continuously disposed between the switch element and the two short sides.

Abstract: An electro-wetting display device includes a first substrate; a second substrate opposite to the first substrate; a plurality of side walls interposed between the first and second substrates, the side walls being arranged in a matrix and cooperating with the first and second substrates to form a plurality of spaces; a first polar liquid disposed in each of the spaces; a second, colored, non-polar liquid disposed in each of the spaces. The second liquid is immiscible with the first liquid. The second substrate includes a reflective electrode and a hydrophobic insulating layer disposed on the reflective electrode. The reflective electrode includes a first metal layer and a transparent protective layer, and the transparent protective layer is interposed between the metal layer and the hydrophobic insulating layer.

Abstract: An exemplary organic light emitting diode (20) includes a substrate (21), a first electrode (22) with a plurality of fluorinions therein, an organic emission stack (29), and a second electrode (28) sequentially stacked in that order. A related method for fabricating the organic emitting diode is also provided.

Abstract: An exemplary method for fabricating an OLED (20) is provided. The method includes: providing an insulative substrate; forming a first electrode on the substrate, the first electrode being a conductive thin film; forming a second electrode on the first electrode, comprising providing an oxygen-containing oxidizing gas with a material used to form the second electrode; patterning the first and second electrodes to form an anode on the substrate; forming a hole injection layer on the anode; forming a hole transfer layer on the hole injection layer; forming an organic light emitting layer on the hole transfer layer; forming an electron transfer layer on the organic light emitting layer; forming an electron injection layer on the electron transfer layer; and forming a cathode on the electron injection layer.

Abstract: An exemplary thin film transistor substrate (200) includes a base (201), a semiconductor pattern (202) formed on the base, a first gate insulating layer (203) formed on the semiconductor pattern, and a gate electrode (223) and a common capacitor electrode (245) formed on the first gate insulating layer. The semiconductor pattern includes a heavily doped polysilicon pattern (212) and a lightly doped polysilicon pattern (213). The gate electrode and the common capacitor electrode correspond to the lightly doped polysilicon pattern. An exemplary method for fabricating the thin film transistor substrate is also provided.

Abstract: An exemplary method for fabricating a polysilicon layer (208) includes the following steps. A substrate (200) is provided, and a first amorphous silicon layer (203) is formed over the substrate. Portions of the first amorphous silicon layer are removed through a photolithograph process to form a plurality of crystallization seeds (205). A second amorphous silicon layer (206) is formed over the substrate and the crystallization seeds. A laser annealing process is conducted to crystallize the amorphous silicon layer into a polysilicon layer.

Abstract: An exemplary method for fabricating an organic light emitting display (OLED) (200) includes: providing a first substrate (210); providing moisture absorber (240) on the first substrate; processing the moisture absorber by using hydrogen plasma; providing a second substrate (220) having an organic light emitting unit (250) formed thereat; and attaching the first and second substrates together with a sealant, such that the moisture absorber and the organic light emitting unit are hermetically sealed between the first and second substrates, with the moisture absorber facing the organic light emitting unit. Because the moisture absorber is finished during the method for fabricating the OLED, and is sealed in the space between the first substrate and the second substrate soon after being finished, the moisture absorber is difficult to react with air. Thus, the OLED has improved quality.

Abstract: An exemplary active matrix organic light emitting display (OLED) (20) includes a transparent insulating substrate (200), a thin film transistor (TFT) structure (210) formed on the transparent insulating substrate, and an organic emission structure (220) formed on the transparent insulating substrate. The TFT structure includes a source electrode (216), a drain electrode (217), and a passivation layer configured as a cathode inter-insulator (318). The passivation layer covers the source electrode and a portion of the drain electrode. The organic emission structure is formed on the other portion of the drain electrode.

Abstract: An exemplary active matrix organic light emitting display (OLED) (10) includes a transparent insulating substrate (20), a thin film transistor (TFT) structure (245) formed on the transparent insulating substrate, and an organic emission structure (244) transparent insulating substrate. The TFT structure includes a source electrode (261), a drain electrode (262), and a passivation layer (221) configured as a cathode inter-insulator. The passivation layer covers the source electrode and the drain electrode. The organic emission structure includes a transparent electrode layer (218) directly connected with the drain electrode.

Abstract: An apparatus for stripping photoresists from a substrate includes a reaction chamber, a plurality of air guiding means provided inside the reaction chamber, a pump for extracting air inside the reaction chamber, and a pipe for circulating and feeding the extracted air back into the reaction chamber. The upper and lower surfaces of the substrate are blown with the extracted air from the air guiding means.

Abstract: An etching system (3) includes an etching chamber (31), an etchant solution tank (32) connected with the etching chamber, a heater (34) set in the tank, and a deionized water (DIW) adding device. The DIW adding device includes a DIW feeding pipe (36) having a first timer (361), and a clean dry air (CDA) feeding pipe (35) having a second timer (351). The DIW and CDA feeding pipes combine into a main pipe (37) that is connected with the etching chamber. A portion of the DIW feeding pipe is set in the tank and heated by the heater. The temperature of the DIW fed into the etching chamber and the temperature of the etchant solution pumped into the etching chamber are same. Thus when the DIW is fed into the etching chamber, the temperature of the etching chamber does not fluctuate, which can maintain the quality of the etching process.

Abstract: A wet-etching apparatus (20) includes a first etching chamber (213), a second etching chamber (215), and a cleaning chamber (214) located between the first and second etching chambers. The wet-etching apparatus includes the cleaning chamber disposed between the first and second etching chambers. After being etched in the first etching chamber and before being conveyed to the second etching chamber, a glass substrate is cleaned, so that the residue thereon is removed. Because no resultant blocks the wet-etching reaction, the glass substrate is etched uniformly. Thus, the quality and the yield of the wet-etching process are improved.

Abstract: A post-treatment method of a semi-finished product after a dry etching process includes the steps of: providing the semi-finished product after completion of a dry etching process, the semi-finished product having a residue formed during the dry etching process; placing the semi-finished product in a chamber having an inlet and an outlet; introducing an SF6 gas into the chamber via the inlet to effect a reaction between the SF6 gas and the residue so as to produce a reaction gas; and discharging any remaining SF6 gas and the reaction gas out of the chamber via the outlet. The SF6 gas can completely react with the residue from the dry etching process and results residue gas pumped out by a vacuum system. It can entirely eliminate the residue over the contact hole and on the inside surface of the dry etching chamber, and can avoid electrical connection errors and improve the efficiency of manufacture. It also can clean the dry etching chamber and prolong the use life of the dry etching chamber.

Abstract: An etching reaction device (3) includes an etching reaction chamber (30), and a number of protrusions (301) arranged on the bottom of the etching reaction chamber. Thus it can economize the etching time and quickly complement the concentration of the etching liquid near to a wafer (7). The protrusions can reduce the capability of the etching reaction chamber, thus it can economize the etching liquid.

Abstract: A single-acid compensating system (20) includes an etching unit (201), and a monitoring and compensating unit (202). The etching unit includes an acid-mixing tank (212). The monitoring and compensating unit includes a measuring element (213), a compensating calculator (214), and a single-acid compensating tank (215). The acid-mixing tank, the measuring element, the calculator, and the compensating tank are connected to cooperatively form a compensating loop. When the measuring element measures that the concentration of the single-acid is lower than a lower limit, it transmits this information to the calculator. After processing the information and performing a calculation, the calculator determines a certain quantity of the single-acid which should be compensated in the acid-mixing tank. All these actions are automated, and they ensure that the concentration of the single-acid is constantly maintained very close to the optimal value.

Abstract: A wet etching system includes a substrate holding chamber (211), a drying chamber (218), a cleaning chamber (217), a wet etching region, an elevator (213), a conveyor (212) arranged above the drying chamber. The cleaning chamber, and the wet etching region, the conveyor communicating with both the substrate holding chamber and the elevator. A substrate being transmitted along the conveyor can avoid shaking, vibration and other disturbances caused by high pressure cleaning. In addition, because the etching chambers are located relatively far away from the substrate holding chamber, there is reduced risk of substrates that are held in the substrate holding chamber being contaminated by chemical reagents used in the etching processes. Furthermore, when two wet etching systems are arranged substantially diagonally opposite each other, the interspace therebetween conveniently serves as a common access region for maintenance and cleaning of the wet etching systems.