Patents by Inventor Jung Mi SHIN

Jung Mi SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GLP-1 receptor agonist and use thereof
    Patent number: 11932618
    Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: March 19, 2024
    Assignee: ILDONG PHARMACEUTICAL CO., LTD.
    Inventors: Hong Chul Yoon, Kyung Mi An, Myong Jae Lee, Jin Hee Lee, Jeong-geun Kim, A-rang Im, Woo Jin Jeon, Jin Ah Jeong, Jaeho Heo, Changhee Hong, Kyeojin Kim, Jung-Eun Park, Te-ik Sohn, Changmok Oh, Da Hae Hong, Sung Wook Kwon, Jung Ho Kim, Jae Eui Shin, Yeongran Yoo, Min Whan Chang, Eun Hye Jang, In-gyu Je, Ji Hye Choi, Gunhee Kim, Yearin Jun
  • Memory system and method of operating the same
    Patent number: 9318198
    Abstract: A method of operating a memory system according to an aspect of the present disclosure includes storing first data in a memory controller; storing second data in the memory controller, wherein the second data is read from a selected page of a first memory block of a memory device; and performing a program operation for storing third data, that include the first data and the second data, in a selected page of a second memory block of the memory device.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: April 19, 2016
    Assignee: Hynix Semiconductor Inc.
    Inventors: Min Joong Jung, Jung Mi Shin, Wan Seob Lee
  • Nonvolatile memory device and method of programming the same
    Patent number: 8717821
    Abstract: The program method of a nonvolatile memory device includes detecting temperature, setting a step voltage, corresponding to an increment of a program voltage in a program operation of an incremental step pulse program (ISPP) method, wherein the step voltage changes based on the detected temperature, and performing the program operation and a program verification operation based on the set step voltage.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: May 6, 2014
    Assignee: SK Hynix Inc.
    Inventors: Seong Je Park, Jung Mi Shin
  • Semiconductor memory device and method of operation the same
    Patent number: 8625376
    Abstract: A semiconductor memory device includes a first plane and a second plane each configured to include a plurality of memory cells, and a data transfer circuit configured to transfer first data, stored in the memory cells of the first plane, to the second plane and transfer second data, stored in the memory cells of the second plane, to the first plane when a copyback operation is performed and to transfer the first data or the second data to an I/O circuit when a read operation is performed.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: January 7, 2014
    Assignee: Hynix Semiconductor Inc.
    Inventors: Wan Seob Lee, Jung Mi Shin
  • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATION THE SAME
    Publication number: 20120281488
    Abstract: A semiconductor memory device includes a first plane and a second plane each configured to include a plurality of memory cells, and a data transfer circuit configured to transfer first data, stored in the memory cells of the first plane, to the second plane and transfer second data, stored in the memory cells of the second plane, to the first plane when a copyback operation is performed and to transfer the first data or the second data to an I/O circuit when a read operation is performed.
    Type: Application
    Filed: November 1, 2011
    Publication date: November 8, 2012
    Inventors: Min Joong Jung, Wan Seob Lee, Jung Mi Shin
  • NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME
    Publication number: 20120163092
    Abstract: The program method of a nonvolatile memory device includes detecting temperature, setting a step voltage, corresponding to an increment of a program voltage in a program operation of an incremental step pulse program (ISPP) method, wherein the step voltage changes based on the detected temperature, and performing the program operation and a program verification operation based on the set step voltage.
    Type: Application
    Filed: September 23, 2011
    Publication date: June 28, 2012
    Applicant: Hynix Semiconductor Inc.
    Inventors: Min Joong Jung, Jung Mi Shin, Seong Je Park
  • MEMORY SYSTEM AND METHOD OF OPERATING THE SAME
    Publication number: 20120151161
    Abstract: A method of operating a memory system according to an aspect of the present disclosure includes storing first data in a memory controller; storing second data in the memory controller, wherein the second data is read from a selected page of a first memory block of a memory device; and performing a program operation for storing third data, that include the first data and the second data, in a selected page of a second memory block of the memory device.
    Type: Application
    Filed: October 25, 2011
    Publication date: June 14, 2012
    Inventors: Min Joong JUNG, Jung Mi SHIN, Wan Seob LEE