Abstract: A semiconductor device, and a method of manufacturing the same, includes a gate stack including a plurality of conductive lines extending in a first horizontal direction, a first slit and a second slit passing through the gate stack in a vertical direction and extending in the first horizontal direction, and a plurality of cell plugs extending in the vertical direction orthogonal to the first horizontal direction in the gate stack between the first slit and the second slit. Each of the first slit and the second slit includes a first portion extending in a diagonal direction between the first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, and a second portion extending in the first horizontal direction.

Abstract: An apparatus for quantum-based physically unclonable functions is disclosed. The apparatus for quantum-based physically unclonable functions according to an embodiment of the present embodiment comprises a random nanostructure formed on a substrate by hydrothermal synthesis, wherein the random nanostructure emits a laser light of a predetermined pattern through the quantum activity of the random nanostructure.

Abstract: A flame-retardant sheet attaching device is disclosed. The flame-retardant sheet attaching device may include a first pressurizing device configured to move in a first direction and apply pressure to a flame-retardant sheet, and a second pressurizing device configured to move in the first direction, the second pressurizing device having at least a portion inserted into a groove of the flame-retardant sheet. The flame-retardant sheet may be configured to move, based on the movement of the second pressurizing device, in a second direction, perpendicular to the first direction. The first pressurizing device may be configured to restrict the movement of the flame-retardant sheet in the first direction, when the flame-retardant sheet moves in the second direction.

Abstract: The present disclosure relates to a multilayer negative electrode comprising a negative electrode current collector configured to transfer electrons between an outer lead and a negative electrode active material, a first negative electrode mixture layer formed on one surface or both surfaces of the current collector and containing natural graphite as a negative electrode active material and a second negative electrode mixture layer formed on the first negative electrode mixture layer and containing artificial graphite as a negative electrode active material, and a lithium secondary battery including the same.

Abstract: A cathode according to an embodiment of the present disclosure may include a cathode current collector including a first surface and a second surface; a first cathode material formed on the first surface of the cathode current collector; and a second cathode material formed on the second surface of the cathode current collector. Each of the first cathode material and the second cathode material may include a first cathode active material and a second cathode active material. The first cathode active material and the second cathode active material have different operating voltage ranges. The weight ratio of the first cathode active material and the second cathode active material included in the first cathode material and the weight ratio of the first cathode active material and the second cathode active material included in the second cathode material may be different.

Abstract: A semiconductor device may include: a gate structure including insulating layers and conductive layers alternately stacked; first supports located in the gate structure, each first support including a second channel layer; second supports located in the gate structure, each second support including a barrier layer; and contact structures extending between the second supports through the gate structure, wherein each contact structure is connected to a corresponding conductive layer.

Abstract: Proposed are thermal processing apparatus, thermal processing method, and substrate treatment equipment, in which particle generation and damage to a substrate in the cooling process of the substrate can be prevented. The thermal processing apparatus includes a chamber having a processing zone therein, a plurality of chuck pins configured to support a substrate and move up or down individually, a heater configured to provide heat energy to the processing zone, a fluid supply port configured to supply a fluid to the processing zone, a fluid discharge port configured to discharge the fluid remaining in the processing zone to the outside, and a controller configured to control a treatment process of the substrate.

Abstract: A memory device includes: a memory cell array including a plurality of cell plugs; a first slit isolating the memory cell array into a plurality of memory regions, the first slit extending in a first direction; and second slits penetrating the plurality of memory regions, the second slits being arranged to be spaced apart from each other in a second direction intersecting the first direction. Gate lines included in each of the plurality of memory regions may be isolated from each other by the first slit. Each gate line located in the same layer among the gate lines included in each of the plurality of memory regions may extend through a first connection region between the second slits for each corresponding memory region.

Abstract: A semiconductor device may include a gate structure, a source structure that is disposed on the gate structure, channel structures that extend into the source structure through the gate structure and include a channel layer and a memory layer surrounding the channel layer, the memory layer including a cut area that exposes the channel layer, and a slit structure that extends into the source structure through the gate structure between the channel structures, an upper surface of the slit structure being disposed at a lower level than the cut area.

Abstract: In a method of manufacturing a semiconductor device, an additional, induced-stress-limiting structure may be provided on a surface, which opposes stress that can be induced in a semiconductor device during its manufacturing processes. Such a stress compensation layer may be formed on a surface to compensate a stress applied to the rest of structure.

Abstract: The present disclosure, in an aspect, relates to a source driver to control a bias current, and more particularly, to a source driver, in which a bias current of a buffer is controlled depending on a distance between the source driver and a pixel in a data line and a position, regarding which a bias current is set, and the intensity of the bias current are changed in every frame so that unnecessary power consumption due to bias currents may be reduced and a block-dim phenomenon may be alleviated.

Abstract: The present disclosure relates to a data driving device and a display device including the same, and more particularly, to a data driving device and a display device including the same, capable of improving the slew rate and the display speed of the display device by overdriving a pixel of a display panel with a power voltage of the data driving device.

Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.

Abstract: The present disclosure provides a substituted piperidine compound of Chemical Formula 1, or a pharmaceutically acceptable salt thereof having activity of degrading androgen receptor (AR). The present disclosure also provides a composition comprising such a substituted piperidine compound or a pharmaceutically acceptable salt thereof. The present disclosure also provides a medical use of a substituted piperidine compound according to the present disclosure, a salt thereof, and a composition comprising the same for the treatment or prophylaxis of AR-related diseases. The present disclosure also provides a method for treating or preventing an AR-related disease comprising administering to a subject in need thereof an effective amount of a substituted piperidine compound according to the present disclosure, a salt thereof, or a composition comprising the same.

Abstract: A semiconductor device may include: a plurality of word lines; a select line; a channel layer extending into the select line through the word lines; a floating gate surrounding sidewalls of the channel layer between the channel layer and the select line; and a charge trap layer including a first and a second portion, wherein the first portion surrounds the sidewalls of the channel layer between the channel layer and the word lines and the second portion surrounds the floating gate between the channel layer and the select line.

Abstract: A multilayer capacitor includes a capacitor body including a dielectric layer and a plurality of internal electrodes, and external electrodes disposed on both ends of the capacitor body and connected to exposed portions of the plurality of internal electrodes, respectively. Each of the external electrodes includes a conductive layer disposed on the capacitor body to be connected to one or more of the plurality of internal electrodes, a conductive resin layer covering the conductive layer, and including a plurality of metal particles, a plurality of elastic fine powder particles each having an elastic powder particle and a metal film plated on a surface of the elastic powder particle, and a conductive resin surrounding the plurality of metal particles and the plurality of elastic fine powder particles and contacting the conductive layer, and a plating layer covering the conductive resin layer.

Abstract: A semiconductor device may include: a first gate structure including a plurality of first conductive layers that are alternately stacked with a plurality of first insulating layers; a second gate structure including a plurality of second conductive layers that are alternately stacked with a plurality of second insulating layers; a third gate structure including third conductive layers that are alternately stacked with a plurality of third insulating layers; and a first contact plug extending into the first gate structure through the third gate structure and the second gate structure, the first contact plug connected to a first of the plurality of first conductive layers, and the first contact plug including a first inflection portion located at an interface between the second gate structure and the third gate structure.

Abstract: The present application relates to a plant-soaked solution comprising sugars containing tagatose and to a method for producing same.

Abstract: A display device includes: a substrate including an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area; a transistor disposed on the display area of the substrate; a first electrode electrically connected to the transistor; an intermediate layer overlapping the first electrode; a second electrode disposed on the intermediate layer; a first dam disposed on the peripheral area of the substrate; and a first encapsulation inorganic layer disposed on the second electrode, wherein the first encapsulation inorganic layer is in contact with a side of the first dam in the peripheral area.

Abstract: The present invention relates to a slurry for fabricating an electrode, an electrode, and an electrochemical cell including same. The slurry for fabricating an electrode according to the present invention includes: an electrode material; an organic binder; and two or more solvents having different solubility parameters. The electrode fabricated using the slurry for fabricating an electrode according to the present invention may have a structure in which electrode materials are dispersed and bound to a porous matrix in a network configuration.