Abstract: A steer-by-wire type power steering apparatus according to embodiments disclosed herein includes a cylinder provided inside a housing and including a first spline on an inner circumferential surface thereof, and a sliding bar inserted into the cylinder and including a second spline engaged with the first spline and a screw connected to a motor, so that friction and noise can be reduced when a sliding bar connected to a tie rod so as to steer a wheel is slid, the durability and strength of the sliding bar can be improved, and the position of the sliding bar can be determined based on a phase difference between the rotation information items of respective motors.

Abstract: A semiconductor package includes a first semiconductor chip having a first top surface and an opposite first bottom surface, first pads on the first top surface, each having a first width and a first height, second pads on the first top surface further outward from a center of the first semiconductor chip, each having a second width less than the first width and a second height greater than the first height. The semiconductor package further includes a second semiconductor chip having a second bottom surface which faces the first top surface and an opposite second top surface, third pads on the second bottom surface which are connected to the first pads, and fourth pads on the second bottom surface which are connected to the second pads. The second bottom surface is convex.

Abstract: A semiconductor package comprises a base substrate, a first semiconductor chip on the base substrate, a first dam structure which overlaps a corner of the first semiconductor chip from a plan view and is placed on the base substrate and a first fillet layer which is placed vertically between the base substrate and the first semiconductor chip, and vertically between the first dam structure and the first semiconductor chip.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1. SiaYbFec??[Formula 1] In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2.

Abstract: A plasma processing apparatus includes; a housing including a first side wall and a second side wall, wherein the housing defines a processing region in which plasma is generated, an optical source unit disposed on the first side wall in alignment with the viewing window, wherein the optical source unit is configured to irradiate the processing region with incident light through the viewing window, a reflector disposed on the second side wall of the housing, wherein the reflector reflects a portion of the incident light irradiating the processing region to generate reflected light, a spectrometer configured to receive the reflected light from the reflector through the viewing window and the optical source unit and a controller configured to determine density of the active species gas within the processing region in relation to the incident light and the reflected light.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d??Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: A tape casting slurry composition for preparing a silicon nitride sintered body is provided. The tape casting slurry composition exhibits a viscosity suitable for tape casting, and thus, can easily control the area and thickness of the prepared green sheet, thereby preparing a large area silicon nitride sintered body having a thickness of a circuit board without post-processing processes such as grinding, and the like. Therefore, according to the present invention, a silicon nitride sintered body can be prepared using low cost raw materials by a simplified process, thereby securing efficiency and economic feasibility of the preparation process.

Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than ?0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A?B+?1??2??Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, ?1 is a constant of ?5.422, and ?2 is a constant of ?9.097.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1. SiaYbFec ??[Formula 1] In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2.

Abstract: A tape casting slurry composition for preparing a silicon nitride sintered body is provided. The tape casting slurry composition exhibits a viscosity suitable for tape casting, and thus, can easily control the area and thickness of the prepared green sheet, thereby preparing a large area silicon nitride sintered body having a thickness of a circuit board without post-processing processes such as grinding, and the like. Therefore, according to the present invention, a silicon nitride sintered body can be prepared using low cost raw materials by a simplified process, thereby securing efficiency and economic feasibility of the preparation process.

Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld ??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d??Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.

Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than ?0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A?B+?1??2??Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, ?1 is a constant of ?5.422, and ?2 is a constant of ?9.097.

Abstract: A semiconductor package comprises a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a third semiconductor chip on the second semiconductor chip and a fourth semiconductor chip on the third semiconductor chip. A first underfill layer is positioned between the second semiconductor chip and the first semiconductor chip; a second underfill layer is positioned between the third semiconductor chip and the second semiconductor chip, and a third underfill layer is positioned between the fourth semiconductor chip and the third semiconductor chip. In some embodiments, the second underfill layer comprises a material that is different than the first and third underfill layers.

Abstract: The present invention provides the composition of an alkali-free glass composition containing no alkali metal oxide and the preparation thereof. The alkali-free glass comprising substantially no alkali metal oxide according to the present invention comprises 60 to 70 wt % of SiO2; 1 to 3.5 wt % of B2O3; 1 to 13 wt % of Al2O3; 8.5 to 14 wt % of MgO; 1 to 3 wt % of CaO; 4 to 7 wt % of SrO; and 0.5 to 7 wt % of BaO, based on the total weight of oxides present therein.