Abstract: A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.

Abstract: An amplifier may include first and second terminals to receive first and second input signals and a differential amplifier providing differential amplification of the first and second input signals. The differential amplifier may include a first differential amplifier stage to receive the first input signal and a second differential amplifier stage to receive the second input signal. The amplifier may further include a first bias circuit to bias the first differential amplifier stage, where the first bias circuit is connected to the second input terminal to provide anti-phase bias control of the first differential amplifier stage. The amplifier may further include a second bias circuit to bias the second differential amplifier stage, where the second bias circuit is connected to the first input terminal to provide anti-phase bias control of the second differential amplifier stage.

Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

Abstract: An amplifier may include first and second terminals to receive first and second input signals and a differential amplifier providing differential amplification of the first and second input signals. The differential amplifier may include a first differential amplifier stage to receive the first input signal and a second differential amplifier stage to receive the second input signal. The amplifier may further include a first bias circuit to bias the first differential amplifier stage, where the first bias circuit is connected to the second input terminal to provide anti-phase bias control of the first differential amplifier stage. The amplifier may further include a second bias circuit to bias the second differential amplifier stage, where the second bias circuit is connected to the first input terminal to provide anti-phase bias control of the second differential amplifier stage.

Abstract: Disclosed is a ruthenium etchant composition containing periodic acid and ammonium ions and having a pH of 6 to 7.5. Further disclosed are a pattern formation method including a step of etching a ruthenium metal film using the etchant composition, a method of manufacturing a display device array substrate by employing the pattern formation method, and a display device array substrate manufactured by the method.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.

Abstract: Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Abstract: The invention provides a method of regulating U1 activity associated with its splicing role as well as its role in protecting pre-mRNAs from premature termination by cleavage and polyadenylation, thereby modulating expression of a gene or genes. In one embodiment, the invention includes compositions and methods for regulating gene expression and treating diseases associated with dysregulated gene expression.

Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.

Abstract: The invention provides a method of regulating U1 activity associated with its splicing role as well as its role in protecting pre-mRNAs from premature termination by cleavage and polyadenylation, thereby modulating expression of a gene or genes. In one embodiment, the invention includes compositions and methods for regulating gene expression and treating diseases associated with dysregulated gene expression.

Abstract: Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: The invention provides novel microfluidic coulometric sensors having a silver (Ag) band electrode longitudinally placed in a microchannel affording visual readout suitable for the naked eye, and methods of fabrication and applications thereof.

Abstract: A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.

Abstract: A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R—Si(R1)n(OR2)3-n in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, R1 is hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, R2 is hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of R1 may be further substituted with at least one substituent selected from halogen, hydroxyl, —N(R11)(R12), and —S(R13), where each of the R11, the R12 and the R13 is independently hydrogen or (C1-C20)alkyl.