Abstract: The present invention relates to a lactide copolymer having excellent general physical properties such as mechanical physical properties, processability, and the like, and having excellent flexibility to be effectively usable as a packaging material, and the like, a preparing method thereof, and a resin composition including the same, wherein the lactide copolymer includes: two or more block copolymer repeating units in which hard segments of polylactide repeating units are bound to both ends of soft segments of polyether polyol repeating units, the block copolymer repeating units are linked with each other via a urethane linking group induced from a polyvalent isocyanate compound having more than 2 to less than 3 equivalents of an isocyanate group per a molecule, and the polyether polyol repeating unit has a number average molecular weight of 1000 to 10000.

Abstract: The present invention relates to a lactide copolymer exhibiting excellent flexibility and having more improved processability and productivity at the time of performing an extrusion and molding process, and a resin composition and film including the same, wherein the lactide copolymer includes a predetermined number of block copolymer repeating units in which hard segments of polylactide repeating units are bound to both ends of soft segments of polyether polyol repeating units, and has a weight-average molecular weight of 150,000 to 300,000, and a melt index y (MI; g/10 min) satisfying a specific relationship, the MI being measured under a load of 2.16 kg and at a temperature of x? between 170? and 210?.

Abstract: The present invention relates to a oriented film having excellent mechanical physical properties and more improved flexibility and elongation to be preferably usable as a packaging film, and the like, wherein the oriented film includes: a lactide copolymer including two or more block copolymer repeating units in which hard segments of polylactide repeating units are bound to both ends of soft segments of polyether polyol repeating units, the block copolymer repeating units being linked with each other, and a slope of a stress-strain curve at a section having a strain of 0 to 16% is 0.5 to 1.1.

Abstract: The present invention relates to a packaging film including a lactide copolymer having no problem of pollution or toxicity while having good flexibility in addition to excellent properties such as mechanical properties, transparency, and processability, and preferably being applicable to food packaging. The packaging film includes a lactide copolymer including two or more specific block copolymerized repeating units that the hard segments of polylactide repeating units are connected to both ends of the soft segments of polyether polyol repeating unit, wherein the block copolymerized repeating units are connected to each other through the intermediation of urethane connecting groups derived from polyvalent isocyanate compound of which the average equivalent of isocyanate group per a molecule is more than 2 and less than 3.

Abstract: The present invention relates to a lactide copolymer having good flexibility in addition to excellent properties such as mechanical properties and processability and preferably being applicable as a packaging material, a preparation method thereof, and a resin composition including the same. The lactide copolymer includes two or more specific block copolymerized repeating units that the hard segments of polylactide repeating units are connected to both ends of the soft segments of polyether polyol repeating unit, and the block copolymerized repeating units are connected to each other through the intermediation of urethane connecting groups derived from polyvalent isocyanate compound of which the average equivalent of isocyanate group per a molecule is more than 2 and less than 3.

Abstract: The present invention relates to a preparation method of a polylactide resin, in which the preparation method includes the step of performing ring opening polymerization of lactide monomers in the presence of an organometallic catalyst and an aromatic monomer scavenger, and the aromatic monomer scavenger is used in an amount of 0.1 to 20 parts by weight, based on 100 parts by weight of the lactide monomers.

Abstract: The present invention relates to a lactide copolymer having good flexibility in addition to excellent properties such as mechanical properties and processability and preferably being applicable as a packaging material, a preparation method thereof, and a resin composition including the same. The lactide copolymer includes two or more specific block copolymerized repeating units that the hard segments of polylactide repeating units are connected to both ends of the soft segments of polyether polyol repeating unit, and the block copolymerized repeating units are connected to each other through the intermediation of urethane connecting groups derived from polyvalent isocyanate compound of which the average equivalent of isocyanate group per a molecule is more than 2 and less than 3.

Abstract: The present invention relates to a packaging film including a lactide copolymer having no problem of pollution or toxicity while having good flexibility in addition to excellent properties such as mechanical properties, transparency, and processability, and preferably being applicable to food packaging. The packaging film includes a lactide copolymer including two or more specific block copolymerized repeating units that the hard segments of polylactide repeating units are connected to both ends of the soft segments of polyether polyol repeating unit, wherein the block copolymerized repeating units are connected to each other through the intermediation of urethane connecting groups derived from polyvalent isocyanate compound of which the average equivalent of isocyanate group per a molecule is more than 2 and less than 3.

Abstract: A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer.

Abstract: A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer.

Abstract: A photomask that is capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent substrate, for defining a floodlighting portion for forming patterns, and a plurality of phase gratings formed on the back surface of the transparent substrate, allowing off-axis illumination (OAI) of an incident light source beyond the OAI limit of exposure equipment, allowing use in the outmost region of an aperture, and allowing modified illumination having a shape suitable for the layout of the opaque patterns.

Abstract: A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer.

Abstract: A photomask that is capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent substrate, for defining a floodlighting portion for forming patterns, and a plurality of phase gratings formed on the back surface of the transparent substrate, allowing off-axis illumination (OAI) of an incident light source beyond the OAI limit of exposure equipment, allowing use in the outmost region of an aperture, and allowing modified illumination having a shape suitable for the layout of the opaque patterns.

Abstract: A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer.