Abstract: The present invention relates to a method and device for distributing idle UE by a carrier in eNB of a multi-carrier based mobile communication system. The method of distributing idle UE in a multi-carrier based mobile communication system according to the present invention includes a process of determining a search rate by a carrier on the basis of information representing load on the carrier, a step of determining a cell reselection priority on the idle UE on the basis of the determined search rate, and a process of transmitting the determined cell reselection priority to the idle UE.

Abstract: The embodiment relates to a data driving device for driving pixels of a display panel. In the data driving device, two adjacent DACs can have different gate loads for the same gray level value so that the fluctuation of the gate load according to the gray level value is reduced.

Abstract: Provided is a substrate treatment apparatus including a process chamber, a supporting unit, a gas supplying unit, and a plasma generating unit. The plasma generating unit may include a power, a primary antenna connected to the power through a first line, a secondary antenna connected to the power through a second line diverging from the first line at a first junction, the primary and secondary antennas being connected in parallel to the power, a third reactance device connected to the power through a third line diverging from the second line at a second junction, the secondary antenna and the third reactance device being connected in parallel to the power, and a variable reactance installed on the second line between the second junction and the secondary antenna.

Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

Abstract: A light emitting device includes an active layer formed between first and second semiconductor layers. The first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion. The stepped portion causes the side surface to extend beyond one of the first surface or second surface of the first semiconductor layer. A light emitting device may also be formed with a buffer layer that includes a stepped portion, and a light emitting device package and system may be formed from the light emitting devices.

Abstract: A wafer transfer robot includes a robot transfer mechanism including a robot axis member and a robot arm member connected to the robot axis member, a robot hand connected to the robot arm member of the robot transfer mechanism and configured to transfer a wafer by using the robot transfer mechanism, a vertical displacement sensor installed in an upper side of the robot hand, and a plurality of horizontal displacement sensors installed in the upper side of the robot hand and separate from each other along a virtual line that is perpendicular to bilaterally symmetric axis of the robot hand.

Abstract: Provided is a substrate treatment apparatus including a process chamber, a supporting unit, a gas supplying unit, and a plasma generating unit. The plasma generating unit may include a power, a primary antenna connected to the power through a first line, a secondary antenna connected to the power through a second line diverging from the first line at a first junction, the primary and secondary antennas being connected in parallel to the power, a third reactance device connected to the power through a third line diverging from the second line at a second junction, the secondary antenna and the third reactance device being connected in parallel to the power, and a variable reactance installed on the second line between the second junction and the secondary antenna.

Abstract: Disclosed are a light emitting apparatus and a lighting system. The light emitting apparatus includes a body, a first electrode having a protrusion pattern on the body, a second electrode electrically separated from the first electrode on the body, an adhesive layer on the first electrode including the protrusion pattern, and a light emitting device on the adhesive layer.

Abstract: A light emitting device includes an active layer formed between first and second semiconductor layers. The first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion. The stepped portion causes the side surface to extend beyond one of the first surface or second surface of the first semiconductor layer. A light emitting device may also be formed with a buffer layer that includes a stepped portion, and a light emitting device package and system may be formed from the light emitting devices.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body including a cavity formed therein with first and second via holes, a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole, a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole, a light emitting device connected with the first and second electrodes, an insulating layer insulating the first and second electrodes from the package body, and a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a body, an insulating layer over a surface of the body, at least one electrode over the insulating layer, a light emitting diode connected to the electrode, and a reflective layer over the insulating layer.

Abstract: Disclosed are a light emitting apparatus and a lighting system. The light emitting apparatus includes a body, a first electrode having a protrusion pattern on the body, a second electrode electrically separated from the first electrode on the body, an adhesive layer on the first electrode including the protrusion pattern, and a light emitting device on the adhesive layer.

Abstract: A light emitting device includes an active layer formed between first and second semiconductor layers. The first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion. The stepped portion causes the side surface to extend beyond one of the first surface or second surface of the first semiconductor layer. A light emitting device may also be formed with a buffer layer that includes a stepped portion, and a light emitting device package and system may be formed from the light emitting devices.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a body, an insulating layer over a surface of the body, at least one electrode over the insulating layer, a light emitting diode connected to the electrode, and a reflective layer over the insulating layer.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body including a cavity formed therein with first and second via holes, a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole, a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole, a light emitting device connected with the first and second electrodes, an insulating layer insulating the first and second electrodes from the package body, and a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other.