Abstract: The present disclosure relates to a catalyst for a fuel cell electrode including an active particle which includes a core comprising platinum, a transition metal excluding platinum, and an oxide of a non-transition metal; and a shell disposed on the core and including platinum, wherein the active particle includes platinum and the non-transition metal in a molar ratio of 100:1.80 to 100:4.00, a method of preparing the same, and a fuel cell including the same.

Abstract: A thermal management system, a method of controlling the same, a compressor included in the same in which the thermal management system and the method of controlling the thermal management system determine whether the current state is a low-refrigerant state in which a refrigerant amount is smaller than a reference refrigerant amount on the basis of a degree of superheat or a degree of supercooling detected from a pressure and temperature of a refrigerant when a battery thermal management mode is operated and operations of cooling and heating a vehicle interior do not operate. The compressor is included in the thermal management system and configured as an electric compressor configured to be controlled by the control method. Therefore, it is possible to easily recognize whether the current state is the low-refrigerant state in which the refrigerant amount is smaller than the reference refrigerant amount.

Abstract: The present disclosure relates to a composition for antiobesity, which contains a Gynostemma pentaphyllum tea or a Gynostemma pentaphyllum tea extract as an active ingredient. The composition of the present disclosure, which contains a Gynostemma pentaphyllum tea or a Gynostemma pentaphyllum tea extract as an active ingredient, is effective for preventing, alleviating or treating diabetes, obesity, muscle loss, etc. since it exhibits the efficacy of increasing AMPK activity, promoting beta oxidation, promoting glucose uptake, etc. In addition, since the composition of the present disclosure is derived from a natural product, it can be safely used as a drug, food, etc. without side effects.

Abstract: The embodiment relates to a data driving device for driving pixels of a display panel. In the data driving device, two adjacent DACs can have different gate loads for the same gray level value so that the fluctuation of the gate load according to the gray level value is reduced.

Abstract: A power control device configured for diagnosing an open-circuit fault occurring in a power system of an autonomous vehicle and an open-circuit diagnosis method thereof, may include a power control switch that selectively connects or separates main power output from the first power supply and auxiliary power output from the second power supply, and a processor that determines a possibility of an open-circuit fault of a vehicle power source based on a current flowing through the power control switch and determines whether it is possible to drive an electric load with an output power of the second power supply alone and determine an open-circuit position based on an output of the first power supply when there is the possibility of the open-circuit fault.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A method for controlling a swash plate compressor and a swash plate compressor capable of preventing an overload by reducing an inclination angle of the swash plate if the torque calculated using compressor information is overloaded. Disclosed is a method for controlling a swash plate compressor including: a measuring step for measuring a compressor operation information of a swash plate compressor; a torque calculating step for calculating a calculated torque value of the swash plate compressor based on the compressor operation information; an overload determining step for determining whether an overload occurred or not by comparing the calculated torque value calculated in the torque calculating step with a torque set value; and an overload preventing step for preventing an overload by reducing an inclination angle of the swash plate of the swash plate compressor if the overload determining step determines that an overload occurred.

Abstract: A method of determining a highlight section of a sound source includes obtaining a sound source and classification information of the sound source, and learning a neural network by using the sound source and the classification information. The neural network includes an input layer including a node corresponding to a feature value of each of a plurality of sections obtained by splitting the sound source according to a time axis, an output layer including a node corresponding to the classification information, a hidden layer defined between the input layer and the output layer, a first function between the input layer and the hidden layer, and a second function between the hidden layer and the output layer, wherein the first function includes an attention model for calculating a weighted sum of the feature value of each section. The highlight section of the sound source is determined based on weight information of a feature value node of each section included in the first function.

Abstract: A method for manufacturing a hot-stamped steel sheet is provided. The method includes forming a welding portion of one steel sheet of a plurality of steel sheets to be joined. The welding portion has a thickness that is greater than that of a non-welding portion. The method also includes aligning welding portions of the plurality of steel sheets with each other, and joining the plurality of steel sheets by spot welding between the welding portions.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A compressor that includes a casing, a compression mechanism provided inside the casing to compress a refrigerant, a rotary shaft transmitting a rotational force to the compression mechanism from a drive source provided outside the casing, a clutch connecting the drive source and the rotary shaft by a magnetic force generated when electric power is applied to the clutch and disconnecting the drive source and the rotary shaft by losing the magnetic force when the electric power applied thereto is cut off, and a rotation measurement means for receiving the magnetic force from the clutch to measure a change in magnetic flux according to the rotation of the rotary shaft and measure a rotational speed of the rotary shaft. Thus, it is possible to measure the rotational speed of the rotary shaft without including a permanent magnet.

Abstract: A fingerprint recognition module according to an embodiment comprises: a substrate; a conductive pattern portion disposed on the substrate; a protective layer partially disposed on one region of the conductive pattern portion; a first chip disposed on the conductive pattern portion exposed through a first open region of the protective layer; and a second chip disposed on the conductive pattern portion exposed through a second open region of the protective layer, wherein the first chip is a fingerprint recognition sensor, the second chip is an application specific integrated circuit, the substrate includes a first non-bending region located at one end thereof, a second non-bending region located at the other end opposite to the one end, and a bending region located between the first and the second non-bending region, the first open region is located on the first non-bending region, and the second open region is located on the second non-bending region.

Abstract: A compressor having a front housing in which a crank chamber is formed. A cylinder block is coupled to an opposite surface facing the front housing and includes reciprocating pistons in a plurality of cylinder bores. A rear housing is coupled to an opposite surface facing the cylinder block, the rear housing includes a suction chamber and a discharge chamber formed therein. A rotating shaft 400 is inserted via centers of the front housing and the cylinder block, the shaft inserted into a swash plate. A diameter maintenance part is configured to constantly maintain a diameter based on an axis direction of the piston 220. A sensor part is configured to sense a speed and a stroke of the piston in accordance with a change in position of a position determination part positioned on one side of the diameter maintenance part.

Abstract: A variable displacement reciprocating piston unit includes a sensor probe, a target, a piston having a top dead center position and a bottom dead center position, and a signal processing unit. The sensor probe, the target, and the piston are located in relation to each other so that the target is moved from being absent from the sensor probe to being present at the sensor probe when the piston travels towards the top dead center position, and the target is moved from being present at the sensor probe to being absent from the sensor probe when the piston travels towards the bottom dead center position. The signal processing unit generates a signal indicating a stroke speed and a stroke length of the piston from a signal from the sensor probe indicating a presence and/or an absence of the target as the target moves relative to the sensor probe.

Abstract: A fingerprint recognition module according to an embodiment comprises: a substrate; a conductive pattern portion disposed on the substrate; a protective layer partially disposed on one region of the conductive pattern portion; a first chip disposed on the conductive pattern portion exposed through a first open region of the protective layer; and a second chip disposed on the conductive pattern portion exposed through a second open region of the protective layer, wherein the first chip is a fingerprint recognition sensor, the second chip is an application specific integrated circuit, the substrate includes a first non-bending region located at one end thereof, a second non-bending region located at the other end opposite to the one end, and a bending region located between the first and the second non-bending region, the first open region is located on the first non-bending region, and the second open region is located on the second non-bending region.

Abstract: An integrated circuit includes: a phase-shifted data signal generation circuit configured to generate a plurality of phase-shifted data signals from an input data signal based on at least one phase-shifted clock signal; a synchronization circuit configured to generate a plurality of synchronization data signals by applying the at least one phase-shifted clock signal to the plurality of phase-shifted data signals provided by the phase-shifted data signal generation circuit; and a control signal generation circuit configured to perform logic operations on the plurality of synchronization data signals to generate a phase control signal for controlling a phase of the at least one phase-shifted clock signal, and generate a frequency control signal for controlling a frequency of the at least one phase-shifted clock signal.