Abstract: In a method of manufacturing a field emitter, a patterned conductive layer is formed on a substrate, an upper surface of the conductive layer is coated with a mixture of a field emission material and metal powder, the mixture is thermally treated to improve adhesion of the mixture to the conductive layer, and a field emission material and a metal deposited on a portion of the substrate other than the conductive layer are removed. Accordingly, the lifespan and field emission characteristic of the field emitter are greatly improved, and a large area field emitter having excellent characteristics that cannot be realized in the conventional art is fabricated.

Abstract: A carbon nanotube emitter and a method of manufacturing a carbon nanotube field emission device using the carbon nanotube emitter. Powdered carbon nanotubes are adsorbed onto a first substrate. A metal is deposited on the carbon nanotubes. The resultant structure is pressure-bonded to a surface of a cathode. The first substrate is spaced apart from a second substrate to tense the carbon nanotubes, so that the carbon nanotubes are perpendicular to the first substrate.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: A method of manufacturing a phosphor layer structure including an improved process of forming a phosphor layer between barriers on an anode substrate includes: forming a substrate to have inner spaces divided by barriers; forming a sacrificial layer on the barriers and the inner spaces to planarize an upper surface of the substrate; forming a phosphor layer on the sacrificial layer; and removing the sacrificial layer, the phosphor layer remaining in the inner spaces previously occupied by the sacrificial layer.

Abstract: A method of stabilizing a field emitter includes performing plasma treatment on carbon nanotubes of the field emitter. The plasma treatment evens the surface of the carbon nanotubes, stabilizing the current density of the carbon nanotubes and increasing the durability of the field emitter.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: In a method of manufacturing a field emitter, a patterned conductive layer is formed on a substrate, an upper surface of the conductive layer is coated with a mixture of a field emission material and metal powder, the mixture is thermally treated to improve adhesion of the mixture to the conductive layer, and a field emission material and a metal deposited on a portion of the substrate other than the conductive layer are removed. Accordingly, the lifespan and field emission characteristic of the field emitter are greatly improved, and a large area field emitter having excellent characteristics that cannot be realized in the conventional art is fabricated.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.