Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: Provided are a display driving device capable of accurately detecting characteristics of pixels of a display panel regardless of an offset of an amplifier, and a display device including the same. The display device includes a display panel including pixels and a display driving device including a sense circuit configured to detect pixel signals from the pixels. The sense circuit includes sense amplifiers configured to provide the first reference voltage to the pixels so that the pixels are programmed using a first reference voltage in a programming mode.

Abstract: Disclosed are a source driver for sensing the degree of deterioration in pixels in some regions of a display panel and compensating for the deterioration in the display panel based on the sensed degree, by considering a characteristic in which pixels included in each display panel similarly deteriorate, and a display device including the same. The display device may include a display panel including pixels, a sensing circuit configured to provide sensing data by sensing the degree of deterioration in pixels in at least one first region of the display panel, and a compensation circuit configured to calculate an amount of compensation of each of the pixels in the first region using the sensing data and compensate for the deterioration in the pixels in the first region and pixels in a second region whose degree of deterioration is not sensed, based on the amount of compensation.

Abstract: Provided are a display driving device capable of accurately detecting characteristics of pixels of a display panel regardless of an offset of an amplifier, and a display device including the same. The display device includes a display panel including pixels and a display driving device including a sense circuit configured to detect pixel signals from the pixels. The sense circuit includes sense amplifiers configured to provide the first reference voltage to the pixels so that the pixels are programmed using a first reference voltage in a programming mode.