Abstract: Embodiments of the present invention provides a semiconductor device including a reservoir capacitor capable of increasing the surface area of the capacitor by disposing a first electrode having a pillar shape between a substrate and a second electrode and a method for fabricating the same. According to an embodiment of the present invention, the reservoir capacitor comprises: a substrate; a first electrode having a pillar shape and disposed over the substrate; a first dielectric layer disposed between the substrate and the first electrode; a second electrode disposed over the substrate and the first electrode and covering a side surface and a top surface of the first electrode; a second dielectric layer disposed between the first electrode and the second electrode; and a third dielectric layer disposed between the substrate and the second electrode.

Abstract: An elevator door stopping device which can prevent that elevator door is closed by itself when power supplied to a motor for opening and closing the elevator door is interrupted, an improvement of the elevator door stopping device characterized in that a first magnetic body is fixed on a shaft rotating in interlock with opening and closing of the elevator door so as to generate a magnetic force in a radial direction perpendicular to the shaft, and a second magnetic body is fixed on a fixed face spaced apart from the first magnetic body at a predetermined interval in the radial direction in such a manner that the second magnetic body has the opposite pole to the first magnetic body, so that a magnetic force is generated between the first magnetic body and the second magnetic body in the radial direction perpendicular to the shaft.

Abstract: A device for inhibiting the closing of a door that controls entry of an enclosure includes a first magnet disposed on a driven portion of the device and a second magnet disposed on a fixed portion of the enclosure. The first magnet and the second magnet are configured to be in register with each other as the door moves toward a closed position such that if the first magnet and the second magnet are in register with each other, a pole of the first magnet is in close proximity of a pole of the second magnet such that the first magnet and the second magnet react to each other to inhibit motion of the door towards the closed position.

Abstract: A semiconductor device includes a semiconductor substrate including a pad region and a peripheral region, a first buffer layer formed to include a capacitor over the semiconductor substrate in the pad region, a second buffer layer formed to include a first contact pad over the first buffer layer, and a third buffer layer formed to include a second contact pad over the first contact pad. The semiconductor device, by additionally forming a buffer layer at a lower part in the pad region, reduces a stress caused by wire bonding. Thus, an applied stress to a lower structure in the pad region is also reduced. As a result, the buffer layer prevents formation of an electrical bridge between the pad region and the peripheral region.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region; a first planar type capacitor including a gate electrode which is positioned in any one region of the first region and the second region; a non-planar type capacitor including a plurality of non-planar type electrodes which are positioned in the other region of the first region and the second region; a second planar type capacitor including a planar type electrode which is positioned over the first planar type capacitor to overlap with the first planar type capacitor; and a common node under the non-planar type capacitor.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region; a first planar type capacitor including a gate electrode which is positioned in any one region of the first region and the second region; a non-planar type capacitor including a plurality of non-planar type electrodes which are positioned in the other region of the first region and the second region; a second planar type capacitor including a planar type electrode which is positioned over the first planar type capacitor to overlap with the first planar type capacitor; and a common node under the non-planar type capacitor.

Abstract: A semiconductor device includes a first pad region including a plurality of first storage nodes, a second pad region neighboring the first pad region and including a plurality of second storage nodes, a coupling portion disposed between the first pad region and the second pad region, and a plate electrode disposed over the plurality of first storage nodes of the first pad region and the plurality of second storage nodes of the second pad region, and disposed in the coupling portion to interconnect the first pad region and the second pad region.

Abstract: An elevator door stopping device which can prevent that elevator door is closed by itself when power supplied to a motor for opening and closing the elevator door is interrupted, an improvement of the elevator door stopping device characterized in that a first magnetic body is fixed on a shaft rotating in interlock with opening and closing of the elevator door so as to generate a magnetic force in a radial direction perpendicular to the shaft, and a second magnetic body is fixed on a fixed face spaced apart from the first magnetic body at a predetermined interval in the radial direction in such a manner that the second magnetic body has the opposite pole to the first magnetic body, so that a magnetic force is generated between the first magnetic body and the second magnetic body in the radial direction perpendicular to the shaft.

Abstract: A semiconductor device includes a first pad region including a plurality of first storage nodes, a second pad region neighboring the first pad region and including a plurality of second storage nodes, a coupling portion disposed between the first pad region and the second pad region, and a plate electrode disposed over the plurality of first storage nodes of the first pad region and the plurality of second storage nodes of the second pad region, and disposed in the coupling portion to interconnect the first pad region and the second pad region.

Abstract: A semiconductor device and a method for forming the same are disclosed, which relate to a reservoir capacitor. The semiconductor device includes: an active region defined by forming a device isolation region over a semiconductor substrate of peripheral region; gate electrodes formed over the active region; a plurality of metal lines over the gate electrodes; a plurality of contact slits elongated into the gate electrode at a position between the plurality of metal lines, a plurality of the first capacitors respectively formed over the plurality of metal lines, and a plurality of the second capacitors respectively formed over the plurality of contact slits.

Abstract: A semiconductor device and a method for forming the same are disclosed, which relate to a reservoir capacitor. The semiconductor device includes: an active region defined by forming a device isolation region over a semiconductor substrate of peripheral region; gate electrodes formed over the active region; a plurality of metal lines over the gate electrodes; a plurality of contact slits elongated into the gate electrode at a position between the plurality of metal lines, a plurality of the first capacitors respectively formed over the plurality of metal lines, and a plurality of the second capacitors respectively formed over the plurality of contact slits.

Abstract: A semiconductor device includes a semiconductor substrate including a pad region and a peripheral region, a first buffer layer formed to include a capacitor over the semiconductor substrate in the pad region, a second buffer layer formed to include a first contact pad over the first buffer layer, and a third buffer layer formed to include a second contact pad over the first contact pad. The semiconductor device, by additionally forming a buffer layer at a lower part in the pad region, reduces a stress caused by wire bonding. Thus, an applied stress to a lower structure in the pad region is also reduced. As a result, the buffer layer prevents formation of an electrical bridge between the pad region and the peripheral region.

Abstract: A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part.

Abstract: A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part.

Abstract: A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part.

Abstract: A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part.

Abstract: A device for inhibiting the closing of a door that controls entry of an enclosure includes a first magnet disposed on a driven portion of the device and a second magnet disposed on a fixed portion of the enclosure. The first magnet and the second magnet are configured to be in register with each other as the door moves toward a closed position such that if the first magnet and the second magnet are in register with each other, a pole of the first magnet is in close proximity of a pole of the second magnet such that the first magnet and the second magnet react to each other to inhibit motion of the door towards the closed position.

Abstract: A semiconductor device includes a semiconductor substrate including an active region and a gate region, and a gate channel formed in a portion of the active region that overlaps the gate region. The gate channel includes a recessed multi-bulb structure.

Abstract: A semiconductor device includes a semiconductor substrate including an active region and a gate region, and a gate channel formed in a portion of the active region that overlaps the gate region. The gate channel includes a recessed multi-bulb structure.

Abstract: A method for combining multimedia files according to the present invention includes a step of selecting a plurality of files of the same kinds or different kinds, a step of checking the structures of the selected files, and a step of combining the selected files based on their structures. Various useful information for users can also be added to the combined files to provide the users better service. The present invention can be implemented in an on-line system as well as an off-line system.