Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: A venturi flowmeter includes a ring of which the inside is hollow and which prevents inner wall abrasion or fatigue load accumulation at a main orifice and thus can reduce maintenance costs. The venturi flowmeter includes a main orifice of which the inside is hollow and an element of which one side has a hollow inside having the same diameter as that of a through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A diffuser has one side having a hollow inside of the same diameter as that of the through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A ring is connected between the main orifice and one side of the element. The ring includes a stopper formed along an inner wall and having a hollow central portion.

Abstract: A venturi flowmeter includes a ring of which the inside is hollow and which prevents inner wall abrasion or fatigue load accumulation at a main orifice and thus can reduce maintenance costs. The venturi flowmeter includes a main orifice of which the inside is hollow and an element of which one side has a hollow inside having the same diameter as that of a through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A diffuser has one side having a hollow inside of the same diameter as that of the through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A ring is connected between the main orifice and one side of the element. The ring includes a stopper formed along an inner wall and having a hollow central portion.

Abstract: The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Abstract: The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Abstract: A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.