Patents by Inventor Jung-Shiung Tsai

Jung-Shiung Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Device and Methods of Manufacture
    Publication number: 20220328316
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Application
    Filed: June 29, 2022
    Publication date: October 13, 2022
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor device with a work function layer having a concentration of fluorine
    Patent number: 11380549
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: July 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE
    Publication number: 20200357645
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor device and methods of manufacture
    Patent number: 10727066
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor Device and Methods of Manufacture
    Publication number: 20200090939
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Application
    Filed: November 19, 2019
    Publication date: March 19, 2020
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor device and methods of manufacture
    Patent number: 10504734
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 10, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor device and methods of manufacture
    Patent number: 10269569
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: April 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor Device and Methods of Manufacture
    Publication number: 20190096678
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 28, 2019
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
  • Semiconductor Device and Methods of Manufacture
    Publication number: 20180151373
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
    Type: Application
    Filed: October 13, 2017
    Publication date: May 31, 2018
    Inventors: Jung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw