Abstract: An electronic device for detecting a position of an object is disclosed, The electronic device includes an optical source configured to emit light to a detection area, a light concentrator configured to concentrate light reflected by a target object located in a detection area, a light receiver configured to receive through photodiodes the reflected light concentrated by the light concentrator and to output a light quantity pattern of the reflected light, and a processor configured to determine the position of the target object based on the light quantity pattern of the reflected light.

Abstract: Example embodiments relate to an optical shutter including a first polarization filter having a nanopore-cholesteric liquid crystal layer, which includes a cholesteric liquid crystal matrix and a plurality of liquid crystal nanopores embedded in the cholesteric liquid crystal matrix, and having a reflective wavelength band that varies according to electrical control, and a second polarization filter that is parallel to the first polarization filter, includes a nanopore-cholesteric liquid crystal layer, which includes a cholesteric liquid crystal matrix and a plurality of liquid crystal nanopores embedded in the cholesteric liquid crystal matrix, and has a reflective wavelength band that varies according to electrical control.

Abstract: A depth sensing apparatus and method for acquiring a depth image of a target object may calculate a difference voltage between a first floating diffusion node and a second floating diffusion node, based on a voltage of a photodiode stored in the first floating diffusion node in a first phase interval and a voltage of the photodiode stored in the second floating diffusion node in a second phase interval, using a sub-integration period, may feed back the difference voltage to one of the first floating diffusion node and the second floating diffusion node, and may calculate a depth value of a pixel based on difference voltages accumulated during an integration period including sub-integration periods.

Abstract: A sensor for suppressing a background signal is provided. The sensor includes: a pixel array that detects a signal by using a plurality of pixels; an accumulator that converts a differential signal between two signals detected from an arbitrary pixel of the pixel array at predetermined times into a digital signal and accumulates the digital signal; and a digital memory that stores the accumulated digital signal.

Abstract: An apparatus for generating an image representing an object is provided. The apparatus may include a filtering unit configured to acquire first light of a first wavelength band and second light of a second wavelength band, which are included in light reflected from the object, by using a single filter; a sensing unit configured to convert both the first light and the second light into charges or convert only the second light into charges; a first image generating unit configured to generate a first image representing the object by correcting color values corresponding to the charges into which the first light and the second light have been converted; and a second image generating unit configured to generate a second image representing the object by using the charges into which the second light has been converted.

Abstract: An image sensor having a pixel architecture for capturing a depth image and a color image. The image sensor may be configured in a pixel architecture in which a floating diffusion (FD) node is shared, and may operate in different pixel architectures in a depth mode and a color mode, respectively.

Abstract: A background light suppression apparatus and method capable of suppressing influences of background light in a depth sensor includes measuring output signals of sub pixels for a sub integration time shorter than a frame integration time; and integrating differences between the output signals after the sub integration time.

Abstract: A depth sensing apparatus and method for acquiring a depth image of a target object may calculate a difference voltage between a first floating diffusion node and a second floating diffusion node, based on a voltage of a photodiode stored in the first floating diffusion node in a first phase interval and a voltage of the photodiode stored in the second floating diffusion node in a second phase interval, using a sub-integration period, may feed back the difference voltage to one of the first floating diffusion node and the second floating diffusion node, and may calculate a depth value of a pixel based on difference voltages accumulated during an integration period including sub-integration periods.

Abstract: There is provided an image sensor having micro lenses of which pitches decrease by different ratios according to left side and right side ratios, which are arranged in different ratios according to upper side and right side ratios, and of which pitches in the edge area are equal to a pixel pitch to arrange the micro lenses in a predetermined interval, thereby capable of preventing ambient sensitivity from deteriorating and suppressing crosstalk.

Abstract: There is provided an image sensor having micro lenses of which pitches decrease by different ratios according to left side and right side ratios, which are arranged in different ratios according to upper side and right side ratios, and of which pitches in the edge area are equal to a pixel pitch to arrange the micro lenses in a predetermined interval, thereby capable of preventing ambient sensitivity from deteriorating and suppressing crosstalk.

Abstract: The present invention relates to a CMOS image sensor and a fabrication method thereof. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

Abstract: An active pixel circuit in a CMOS image sensor includes a photodiode to accumulate charge due to incident light. A first transfer transistor is arranged to pass a transfer signal when turned on by a column selection signal. A second transfer transistor transfers the accumulated charge from the photodiode to a first floating node when turned on by the transfer signal from the first transfer transistor. A source follow driver transistor changes the potential of a second floating node according to the charge transferred to the first floating node. A line selecting transistor reads out the potential of the second floating node when turned on by a line selection signal, and a reset transistor resets the charges accumulated in the first floating node when the reading out operation is finished.

Abstract: The present invention relates to a CMOS image sensor and a fabrication method thereof. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

Abstract: A CMOS image sensor and a fabrication method thereof are disclosed. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.