Abstract: A sensor mounted wafer includes a lower case, a circuit board, a metal layer, an upper case and lower case. A mounting groove is formed on a surface of the lower case. An electronic component is mounted on the circuit board, and placed in the mounting groove. The upper case having an insertion groove on a surface of the upper case, wherein the electronic component is inserted into the insertion groove, and the upper case is bonded together to the lower case. The metal layer placed on at least one surface of the lower case and the upper case.

Abstract: A sensor mounted wafer includes a lower case, a circuit board, a metal layer, an upper case and lower case. A mounting groove is formed on a surface of the lower case. An electronic component is mounted on the circuit board, and placed in the mounting groove. The upper case having an insertion groove on a surface of the upper case, wherein the electronic component is inserted into the insertion groove, and the upper case is bonded together to the lower case. The metal layer placed on at least one surface of the lower case and the upper case.

Abstract: The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present invention can obtain the effect for improving uniformity of effective current density by including the separation region for separating the light-emitting region, and can expect an improvement in optical efficiency through the excellent current dispersion effect.

Abstract: Disclosed are a light-emitting device having excellent light-emitting efficiency by a current spreading effect and a method for manufacturing the same. The light-emitting device, according to the present invention, comprises: a light-emitting structure which is formed on a substrate, includes a first semiconductor layer, an active layer, and a second semiconductor layer, and in which a plurality of trenches are formed up to the second semiconductor layer and the active layer; a first electrode formed to come in contact with the second semiconductor layer of the light-emitting structure; and a second electrode formed to come in contact with the first semiconductor layer along at least one edge of the substrate.