Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor region of the substrate and configured to include a channel layer, an insulation film, a gate electrode, a source electrode and a drain electrode; a storage capacitor arranged in the storage capacitor region, the pixel region and the pad region of the substrate and configured to include a first storage electrode, an insulation film pattern and a second storage electrode; a color filter arranged over the storage capacitor opposite to the pixel region; and an organic light emitting diode arranged on the color filter and configured to include a first electrode, an organic emission layer and a second electrode.

Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor region of the substrate and configured to include a channel layer, an insulation film, a gate electrode, a source electrode and a drain electrode; a storage capacitor arranged in the storage capacitor region, the pixel region and the pad region of the substrate and configured to include a first storage electrode, an insulation film pattern and a second storage electrode; a color filter arranged over the storage capacitor opposite to the pixel region; and an organic light emitting diode arranged on the color filter and configured to include a first electrode, an organic emission layer and a second electrode.

Abstract: An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode corresponding to the second semiconductor layer, a second source electrode and a second drain electrode; a first transparent capacitor electrode connected to the first drain electrode; a first passivation layer on the first transparent capacitor electrode; a second transparent capacitor electrode on the first passivation layer and connected to the second drain electrode, the second transparent capacitor electrode overlapping the first transparent capacitor electrode; a second passivation layer on or over the first passivation layer and the second transparent capacitor electrode; and a first electrode on the second passivation layer and connected to the second transparent capacitor electrode

Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor region of the substrate and configured to include a channel layer, an insulation film, a gate electrode, a source electrode and a drain electrode; a storage capacitor arranged in the storage capacitor region, the pixel region and the pad region of the substrate and configured to include a first storage electrode, an insulation film pattern and a second storage electrode; a color filter arranged over the storage capacitor opposite to the pixel region; and an organic light emitting diode arranged on the color filter and configured to include a first electrode, an organic emission layer and a second electrode.

Abstract: An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode corresponding to the second semiconductor layer, a second source electrode and a second drain electrode; a first transparent capacitor electrode connected to the first drain electrode; a first passivation layer on the first transparent capacitor electrode; a second transparent capacitor electrode on the first passivation layer and connected to the second drain electrode, the second transparent capacitor electrode overlapping the first transparent capacitor electrode; a second passivation layer on or over the first passivation layer and the second transparent capacitor electrode; and a first electrode on the second passivation layer and connected to the second transparent capacitor electrode

Abstract: An array substrate for a liquid crystal display device includes a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes on and in contact with the semiconductor layer; and an oxide layer on the gate electrode, the oxide layer including a plurality of metal atoms, wherein each of the source and drain electrodes includes a pattern of metal substantially made of the plurality of metal atoms.

Abstract: An organic light emitting diode display device capable of improving capacitance Cst of a storage capacitor and transmittance and a method of fabricating the same are disclosed. The organic light emitting diode display device includes a driving thin film transistor (TFT) formed on the substrate, a passivation film formed to cover the TFT driver, a color filter formed on the passivation film in a luminescent region, a planarization film formed to cover the color filter, a transparent metal layer formed on the planarization film, an insulating film formed on the transparent metal layer, a first electrode connected to the TFT driver and overlapping the transparent metal layer while interposing the insulating film therebetween, an organic light emitting layer and a second electrode which are sequentially formed on the first electrode. The transparent metal layer, the insulating film, and the first electrode constitute a storage capacitor in the luminescent region.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: An organic light emitting diode display device capable of improving capacitance Cst of a storage capacitor and transmittance and a method of fabricating the same are disclosed. The organic light emitting diode display device includes a driving thin film transistor (TFT) formed on the substrate, a passivation film formed to cover the TFT driver, a color filter formed on the passivation film in a luminescent region, a planarization film formed to cover the color filter, a transparent metal layer formed on the planarization film, an insulating film formed on the transparent metal layer, a first electrode connected to the TFT driver and overlapping the transparent metal layer while interposing the insulating film therebetween, an organic light emitting layer and a second electrode which are sequentially formed on the first electrode. The transparent metal layer, the insulating film, and the first electrode constitute a storage capacitor in the luminescent region.

Abstract: The present disclosure is a method for forming a thin film pattern to form a micron-pattern and a flat display device having the same. The method for forming a thin film pattern includes the steps of forming first to third thin film layers on a substrate in succession, forming a first photoresist pattern on the third thin film layer, patterning the second and third thin film layers using the first photoresist pattern as a mask to form first and second thin film mask pattern having line widths different from each other, forming a second photoresist pattern at a region where the first and second thin film mask patterns do not overlap positioned between the first thin film layer and the second thin film mask pattern, removing the first and second thin film mask patterns, and patterning the first thin film layer using the second photoresist pattern as a mask.

Abstract: A method of forming a transparent electrode includes forming a first transparent conductive material layer on a base; performing a plasma process on the first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into semitransparent; forming a second transparent conductive material layer on the first transparent conductive material layer; patterning the second transparent conductive material layer and the first transparent conductive material layer; and annealing the patterned second transparent conductive material layer and the patterned first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into transparent.

Abstract: A method of forming a transparent electrode includes forming a first transparent conductive material layer on a base; performing a plasma process on the first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into semitransparent; forming a second transparent conductive material layer on the first transparent conductive material layer; patterning the second transparent conductive material layer and the first transparent conductive material layer; and annealing the patterned second transparent conductive material layer and the patterned first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into transparent.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: The present disclosure is a method for forming a thin film pattern to form a micron-pattern and a flat display device having the same. The method for forming a thin film pattern includes the steps of forming first to third thin film layers on a substrate in succession, forming a first photoresist pattern on the third thin film layer, patterning the second and third thin film layers using the first photoresist pattern as a mask to form first and second thin film mask pattern having line widths different from each other, forming a second photoresist pattern at a region where the first and second thin film mask patterns do not overlap positioned between the first thin film layer and the second thin film mask pattern, removing the first and second thin film mask patterns, and patterning the first thin film layer using the second photoresist pattern as a mask.