Abstract: A light emitting device package includes a package body having a mounting region including a mounting surface for a light emitting device, a groove portion, and a bottom surface lower than the mounting surface, and a lead frame supported by the package body, a portion of the lead frame being disposed on the bottom surface and a portion of the lead frame being exposed by the groove portion. The light emitting device has a first plane on which an electrode pad is disposed, a second plane opposite the first plane, and a third plane disposed between the first plane and the second plane to connect the first plane to the second plane. The light emitting device is to be disposed in the mounting region such that the first plane is in contact with the mounting surface and the electrode pad is in the groove portion.

Abstract: A semiconductor light emitting device includes: a package body having a cavity, and having a first wiring electrode and a second wiring electrode disposed on a bottom surface of the cavity; a light emitting diode (LED) chip having a first surface with a first electrode and a second electrode thereon, a second surface, and lateral surfaces, the LED chip being mounted in the cavity such that the first surface faces the bottom surface, a wavelength conversion film on the second surface of the LED chip, and including a first wavelength conversion material, and a reflective resin portion in the cavity that surrounds the LED chip.

Abstract: Disclosed herein is a method for manufacturing an implant that is to be surgically inserted in vivo, such as in an artificial knee or artificial hip. According to the method, the porous layer contains pores that have a vertically curved shape with a radius of 100 to 300 ?m, thus allowing a bond to grow into the pores to enhance bond adhesion, and an interconnection space is formed between turning points in adjacent unit base layers to increase the ratio of interconnection between pores, whereby bones are allowed to grow into the pores to increase bone adhesion.

Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.

Abstract: A light emitting device package includes a package body having a mounting region including a mounting surface for a light emitting device, a groove portion, and a bottom surface lower than the mounting surface, and a lead frame supported by the package body, a portion of the lead frame being disposed on the bottom surface and a portion of the lead frame being exposed by the groove portion. The light emitting device has a first plane on which an electrode pad is disposed, a second plane opposite the first plane, and a third plane disposed between the first plane and the second plane to connect the first plane to the second plane. The light emitting device is to be disposed in the mounting region such that the first plane is in contact with the mounting surface and the electrode pad is in the groove portion.

Abstract: A semiconductor light emitting device may include a substrate including: a first region having a first pattern; and a second region having a second pattern surrounding the first pattern, the second pattern being different from the first pattern; and a light emitting structure disposed on the first and second regions and including: a first conductive semiconductor layer; an active layer; and a second conductive semiconductor layer.

Abstract: A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semicondu

Abstract: A patient-customized surgical instrument used to form a surgical site in a tibia for implantation of an implant into the tibia, and a surgical module using the same. A body part is coupled to the tibia to surround a portion of the tibia. A cutting-member insertion window is formed through a side of the body part to receive a cutting member that is inserted to form a cutting plane of the tibia. A position setting hole is formed through the upper side of the body part to receive and guide a post recess forming member that is used to form a post recess in the tibia. A post of the tibia element is received in the post recess. A surgical site can be accurately and easily formed in a damaged tibia.

Abstract: There are provided a light-emitting device and a light-emitting device package capable of simultaneously controlling brightness and correlated color temperature (CCT) of an illumination apparatus using the same. The light-emitting device includes a plurality of light-emitting units each including an active layer of multi quantum wells (MQW) and an electrode unit electrically connected to the light-emitting units. Brightness and CCT of light components generated by the plurality of light-emitting units simultaneously change in accordance with an amount of current applied by an external input power source connected to the light-emitting units through the electrode unit.

Abstract: A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semicondu

Abstract: Disclosed herein is a method for manufacturing an implant that is to be surgically inserted in vivo, such as in an artificial knee or artificial hip. According to the method, the porous layer contains pores that have a vertically curved shape with a radius of 100 to 300 ?m, thus allowing a bond to grow into the pores to enhance bond adhesion, and an interconnection space is formed between turning points in adjacent unit base layers to increase the ratio of interconnection between pores, whereby bones are allowed to grow into the pores to increase bone adhesion.

Abstract: There are provided a light-emitting device and a light-emitting device package capable of simultaneously controlling brightness and correlated color temperature (CCT) of an illumination apparatus using the same. The light-emitting device includes a plurality of light-emitting units each including an active layer of multi quantum wells (MQW) and an electrode unit electrically connected to the light-emitting units. Brightness and CCT of light components generated by the plurality of light-emitting units simultaneously change in accordance with an amount of current applied by an external input power source connected to the light-emitting units through the electrode unit.

Abstract: A device for positioning a knee joint line for revision total knee arthroplasty. In revision total knee arthroplasty, the position of the joint line of an existing femoral element is measured before the existing femoral element is removed from the femur in revision total knee arthroplasty. A new femoral element is implanted according to the measured position of the joint line. The joint line is formed at the same position as the joint line of the other leg. The position of the surface of the femur to be cut is determined based on the position of the joint line when a loss or the like in the femur must be compensated for by implanting a block between the femur and the femoral element.

Abstract: A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion. The second electrode unit includes a second electrode pad and a second electrode finger extending from the second electrode pad, and has an annular shape with an open portion. One of the first and second electrode units substantially surrounds the other, and the center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure.

Abstract: A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion. The second electrode unit includes a second electrode pad and a second electrode finger extending from the second electrode pad, and has an annular shape with an open portion. One of the first and second electrode units substantially surrounds the other, and the center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure.

Abstract: The present invention relates to an implant which is surgically inserted in vivo such as an artificial knee joint or artificial hip joint. More particularly, the present invention relates to an implant for in-vivo insertion, wherein the porosity of a porous coating layer formed on the surface of the implant, thus increasing the bone adhesion of the implant into pores, the adhesivity between the implant and the porous coating layer and the adhesivity between particles in the porous coating layer, wherein vertically-curved pores each having a radius of 100˜300 ?m are formed in the porous coating layer to increase the adhesivity of the implant to the bone growing into the pores, thus increasing bone adhesion, and wherein the ratio of interconnected pores in the porous coating layer is increased, and thus bones growing into the pores are interconnected, thereby increasing the adhesivity between the implant and the bones.

Abstract: An artificial knee joint in which plural flexions are formed at a femur joint member includes a femur joint member which is joined to an end portion of a tibia near a femur; a tibia joint member which is joined to an end portion of a femur near a tibia; and a bearing member between the femur joint member and the tibia joint member, wherein the femur joint member includes plural side flexions which have various radii of curvature in order to make the contact surface become enlarged so that the stress may be dispersed at the contact portion with the tibia.

Abstract: An artificial knee joint is provided in which a flexion is formed at the bearing member and includes a femur joint member which is joined to an end portion of a tibia near a femur; a tibia joint member which is joined to an end portion of a femur near a tibia; and a bearing member between the femur joint member and the tibia joint member, wherein the bearing member includes a groove where a planar front flexion and a planar rear flexion at an upper plane, in order to provide an artificial knee joint movement similar to a real knee movement.

Abstract: An implant for correcting pectus excavatum is disclosed, which comprises a chest correction bar (30) inserted into a body for lifting a depressed sternum and costal cartilages, and a stabilizer (40) for being inserted into a distal end of the chest correction bar (30) to prevent the chest correction bar from being rotated inside the body, wherein the chest correction bar (30) is formed at both jagged distal ends thereof with recesses (33) each of a predetermined length along the lengthwise direction of the chest correction bar (30), and wherein the stabilizer (40) comprises: two fixing plates (41, 41?) for being fixed to the body of a patient; a bridge (42) connecting the two fixing plates (41, 41?); two protruders (43, 43?) each generally opposed from the fixing plates (41, 41?) so as to be hitched by the recesses (33) at the distal ends of the chest correction bar (30) inserted from under the bridge (42), where there are formed two spaces (C) each of a predetermined size between the two protuders (43, 43?)

Abstract: A prosthetic cage for spine adapted to be implanted in an intervertebral disc space between two vertebral bodies in a spine and to accommodate fusion of the disc space, said cage being a tubular body with an internal aperture, an external surface of which having a plurality of wall apertures each perpendicular to the longitudinal axis thereof and communicating with the internal aperture, and dual convex screw threads extended therefrom, such that the cage of the present invention has an advantage that the stability of fixation between the cage and the vertebral body can be achieved by simple variation of its shape.