Abstract: A lithium secondary battery for thermal runaway delay, includes an electrode coated with a coating ink prepared by the method The method of preparing a coating ink composition uses expandable graphite (EG) as a starting material to obtain non-oxidized graphene, so there is no reduction process, no acid is used, and through a simple manufacturing process, manufacturing costs and times can be reduced while enabling mass-production and causing no environmental problems. Further, the coating ink composition prepared by the method of preparing the coating ink composition can improve properties such as viscosity, dispersion stability, electrical conductivity, and substrate adhesion of the ink by using a polymer as an additive. In addition, by coating the electrode of the secondary battery with the coating ink composition containing graphene nanoplatelets or non-oxidized graphene, thermal runaway due to overload of thermal energy generated within the secondary battery can be delayed and prevented.

Abstract: A tape used to attach a notice to an object through an adhesive strength includes: a first side attached to the object through a first adhesive strength; and a second side which has a second adhesive strength weaker than the first adhesive strength and to which the notice is attached, wherein, with such a configuration, using the tape having different adhesive strengths on both sides, the first side with the stronger adhesive strength is attached to the object, and the notice is attached to the second side with the weaker adhesive strength, and thus there is an effect that the tape can be attached to various objects to post a notice.

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract: A method of fabricating a semiconductor device includes forming a first interlayer insulating film including a storage node contact plug over a semiconductor substrate. A second interlayer insulating film is formed over the first interlayer insulating film and the storage node contact plug. A mask pattern is formed over the second interlayer insulating film to expose a storage node region. The second interlayer insulating film and the first interlayer insulating film is selectively etched to form a recess exposing a portion of the storage node contact plug. A lower storage node is formed in the recess. The storage node includes a concave structure that surrounds the exposed storage node contact plug. A dip-out process is performed to remove the second interlayer insulating film. A dielectric film is formed over the semiconductor substrate including the lower storage node. A plate electrode is deposited over the dielectric film to form a capacitor.