Abstract: A method for controlling an alternating current (AC) output of a photovoltaic (PV) device, and an AC PV device are introduced herein. The method includes: receiving solar radiant energy by using a PV cell array and then converting the solar radiant energy into a direct current (DC) energy output; and selecting an arrangement and combination sequence of the PV cells by using a control module, to vary a voltage according to a timing (frequency), so that a sine-like wave output is obtained at an output terminal.

Abstract: A method for controlling an alternating current (AC) output of a photovoltaic (PV) device, and an AC PV device are introduced herein. The method includes: receiving solar radiant energy by using a PV cell array and then converting the solar radiant energy into a direct current (DC) energy output; and selecting an arrangement and combination sequence of the PV cells by using a control module, to vary a voltage according to a timing (frequency), so that a sine-like wave output is obtained at an output terminal.

Abstract: A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.

Abstract: A bi-functional photovoltaic device is provided. The bi-functional photovoltaic device includes at least one solar cell and a control device. Each of the solar cell includes a multilayer semiconductor layer of group III-V compound semiconductor, a first electrode disposed on the back of the multilayer semiconductor layer, and a second electrode disposed on the front of the multilayer semiconductor layer. The control device connects with the at least one solar cell in order to control them functioning as solar cell or light emitting diode.

Abstract: The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Abstract: The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.

Abstract: A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

Abstract: A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.

Abstract: A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

Abstract: A light therapeutic device. The light therapeutic device comprises a flexible optical element capable of deforming corresponding to an affected part of a patient and providing a light of specific wavelength for treating the affected part. The flexible optical element comprises a flexible optical conductor coated with opaque material, and light is emitted from the flexible optical conductor by selectively removing the opaque material of a part of the optical conductors.

Abstract: The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.

Abstract: The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Abstract: An irradiation apparatus for a photodynamic treatment. The irradiation apparatus includes a main body, a high power light emitting element, an optical lens assembly and an optical fiber. The high power light emitting element is disposed on the main body to output light. The optical lens assembly is adjacent to the high power light emitting element and disposed on the main body to receive the light from the high power light emitting element. The optical fiber has an input end and an output end. The input end is coupled to the optical lens assembly to receive and transmit the light from the optical lens assembly.

Abstract: The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.

Abstract: An LED package assembly comprising two or more light emitting diode dies within an epoxy housing such that a wider light emitting angle with a higher light intensity everywhere around the package including its bottom part is obtained. The LED package can be a substitute for bulb illumination or serving some decorative functions. Furthermore, the LED has low power consumption, a tough body and a long working life. Moreover, a cluster of these LEDs in a large display screen is capable of enhancing clarity of vision and the range of observation from a few meters to a few kilometers away.

Abstract: A plastic-molded apparatus for a semiconductor laser is disclosed, which comprise: a first lead having a broad end thereof serving as a mounting plate; a second lead located at one side of the first lead; a third lead located at other side of the first lead; a submount, disposed on a front end of the mounting plate, having a semiconductor laser chip disposed thereon, electrically connected to the second lead, and a monitor detector disposed on the mounting plate closely adjacent to the submount, electrically connected to the third lead, for receiving backward light from the semiconductor laser chip; a plastic-molded header to fix the first lead, the second lead and the third lead; and a transparent cap, adapted to the plastic-molded header, for sealing all components including the laser chip, the monitor detector and peripheral parts on the plastic-molded header.